Electronic inhomogeneity and phase fluctuation in one-unit-cell FeSe films.

One-unit-cell FeSe films on SrTiO3 substrates are of great interest owing to significantly enlarged pairing gaps characterized by two coherence peaks at ±10 meV and ±20 meV. In-situ transport measurement is desired to reveal novel properties. Here, we performed in-situ microscale electrical transport and combined scanning tunneling microscopy measurements on continuous one-unit-cell FeSe films with twin boundaries. We observed two spatially coexisting superconducting phases in domains and on boundaries, characterized by distinct superconducting gaps ( Δ 1 ~15 meV vs. Δ 2 ~10 meV) and pairing temperatures (Tp1~52.0 K vs. Tp2~37.3 K), and correspondingly two-step nonlinear V ~ I α behavior but a concurrent Berezinskii-Kosterlitz-Thouless (BKT)-like transition occurring at T BKT ~28.7 K. Moreover, the onset transition temperature T c onset ~54 K and zero-resistivity temperature T c zero ~31 K are consistent with Tp1 and T BKT , respectively. Our results indicate the broadened superconducting transition in FeSe/SrTiO3 is related to intrinsic electronic inhomogeneity due to distinct two-gap features and phase fluctuations of two-dimensional superconductivity.

Selective Control of Phases and Electronic Structures of Monolayer TaTe2.

Transition metal dichalcogenide (TMDC) films exhibit rich phases and superstructures, which can be controlled by the growth conditions as well as post-growth annealing treatment. Here, the selective growth of monolayer TaTe2 films with different phases as well as superstructures using molecular beam epitaxy (MBE) is reported. Monolayer 1H-TaTe2 and 1T-TaTe2 films can be selectively controlled by varying the growth temperature, and their different electronic structures are revealed through the combination of angle-resolved photoemission spectroscopy measurements (ARPES) and first-principles calculations. Moreover, post-growth annealing of the 1H-TaTe2 film further leads to a transition from a 19 × 19 $\sqrt {19}{\times }\sqrt {19}$ superstructure to a new 2 × 2 superstructure, where two gaps are observed in the electronic structure and persist up to room temperature. First-principles calculations reveal the role of the phonon instability in the formation of superstructures and the effect of local atomic distortions on the modified electronic structures. This work demonstrates the manipulation of the rich phases and superstructures of monolayer TaTe2 films by controlling the growth kinetics and post-growth annealing.

Nanoscale multistate resistive switching in WO3 through scanning probe induced proton evolution.

Multistate resistive switching device emerges as a promising electronic unit for energy-efficient neuromorphic computing. Electric-field induced topotactic phase transition with ionic evolution represents an important pathway for this purpose, which, however, faces significant challenges in device scaling. This work demonstrates a convenient scanning-probe-induced proton evolution within WO3, driving a reversible insulator-to-metal transition (IMT) at nanoscale. Specifically, the Pt-coated scanning probe serves as an efficient hydrogen catalysis probe, leading to a hydrogen spillover across the nano junction between the probe and sample surface. A positively biased voltage drives protons into the sample, while a negative voltage extracts protons out, giving rise to a reversible manipulation on hydrogenation-induced electron doping, accompanied by a dramatic resistive switching. The precise control of the scanning probe offers the opportunity to manipulate the local conductivity at nanoscale, which is further visualized through a printed portrait encoded by local conductivity. Notably, multistate resistive switching is successfully demonstrated via successive set and reset processes. Our work highlights the probe-induced hydrogen evolution as a new direction to engineer memristor at nanoscale.

Oscillation of Electronic-Band-Gap Size Induced by Crystalline Symmetry Change in Ultrathin PbTe Films.

For the semiconductors of atomic length scales, even one atom layer difference could modify crystal symmetry and lead to a significant change in electronic structure, which is essential for modern electronics. However, the experimental exploration of such effect has not been achieved due to challenges in sample fabrication and characterization with atomic-scale precision. Here, we report the discovery of crystal symmetry alternation induced band-gap oscillation in atomically thin PbTe films by scanning tunneling microscopy. As the thickness of PbTe films is reduced from an 18- to 2-atomic layer, the band-gap size not only expands from 0.19 eV to 1.06 eV by 5.6 fold, but also exhibits an even-odd-layer oscillation, which is attributed to the alternating crystal symmetries between P4/mmm and P4/nmm. Our work sheds new light on electronic structure engineering of semiconductors at atomic scale for next-generation nanoelectronics.

Construction of molecular beam epitaxy and multi-probe scanning tunneling potentiometry combined system.

Molecular beam epitaxy (MBE) is a powerful technique to grow high quality thin films with atomic precision, and multiprobe scanning tunneling potentiometry (STP) is an ideal tool to probe electronic transportation in nanometer scale. We combine the two advanced techniques together and successfully construct a unique system of MBE, STP, and four-probe in situ transport measurement. Excellent functions of this system have been demonstrated by experiments on several materials under ultrahigh vacuum conditions. The system provides an ideal platform for in situ study of electronic transport properties of various thin films, such as two-dimensional superconductors and topological insulators.

Enhanced Hydrogen Evolution Reaction Performance of NiCo2P by Filling Oxygen Vacancies by Phosphorus in Thin-Coating CeO2.

A series of NiCo2P-based electrocatalysts, which were wrapped by CeO2 whose oxygen vacancies (VO) are partially filled with phosphorus atoms (named as NiCo2Px/PxFVo-CeO2, where x refers to the consumption of NaH2PO2·H2O), have been fabricated to improve the electrocatalytic reactivity of NiCo2P toward hydrogen evolution in alkaline solution. In the novel catalysts, the P atoms fill the oxygen vacancies, elevate the chemical valence state of Ni2+ and Co3+, and increase the hydride acceptors, which reinforcing the promoting effect of CeO2 in the hydrogen evolution reaction (HER). Moreover, the negatively charged P atoms capture the positively charged protons more easily, benefiting the Volmer step during HER. Furthermore, the synergistic effect between oxygen vacancies and the filled P atoms accelerates the migration rate of electrons/ions and increases the electrochemical active area. All of the above are advantageous to the hydrogen evolution of NiCo2Px/PxFVo-CeO2 in alkaline electrolyte. As a result, the overpotential as low as 33.6 mV is achieved for NiCo2P0.3/P0.3FVo-CeO2 in alkaline media to drive a current density of 10 mA cm-2. The reactivity is superior to that of Pt/C at a large current density along with a Tafel slope of 61.24 mV dec-1 and long-term durability, which giving a new technology for efficient transition-metal catalyst candidates toward HER in alkaline solution.

Standing Waves Induced by Valley-Mismatched Domains in Ferroelectric SnTe Monolayers.

Two-dimensional (2D) quasiparticle standing waves originate from the interference of coherent quantum states and are usually created by the scattering off edges, atomic steps, or adatoms that induce large potential barriers. We report standing waves close to the valence band maximum (E_{V}), confined by electrically neutral domain walls of newly discovered ferroelectric SnTe monolayers, as revealed by spatially resolved scanning tunneling spectroscopy. Ab initio calculations show that this novel confinement arises from the polarization lifted hole valley degeneracy and a ∼90° rotation of the Brillouin zones that render holes' momentum mismatched across neighboring domains. These results show a potential for polarization-tuned valleytronics in 2D ferroelectrics.

Enhanced Spontaneous Polarization in Ultrathin SnTe Films with Layered Antipolar Structure.

2D SnTe films with a thickness of as little as 2 atomic layers (ALs) have recently been shown to be ferroelectric with in-plane polarization. Remarkably, they exhibit transition temperatures (Tc ) much higher than that of bulk SnTe. Here, combining molecular beam epitaxy, variable temperature scanning tunneling microscopy, and ab initio calculations, the underlying mechanism of the Tc enhancement is unveiled, which relies on the formation of γ-SnTe, a van der Waals orthorhombic phase with antipolar inter-layer coupling in few-AL thick SnTe films. In this phase, 4n - 2 AL (n = 1, 2, 3…) thick films are found to possess finite in-plane polarization (space group Pmn21 ), while 4n AL thick films have zero total polarization (space group Pnma). Above 8 AL, the γ-SnTe phase becomes metastable, and can convert irreversibly to the bulk rock salt phase as the temperature is increased. This finding unambiguously bridges experiments on ultrathin SnTe films with predictions of robust ferroelectricity in GeS-type monochalcogenide monolayers. The observed high transition temperature, together with the strong spin-orbit coupling and van der Waals structure, underlines the potential of atomically thin γ-SnTe films for the development of novel spontaneous polarization-based devices.

CeO x-Decorated NiFe-Layered Double Hydroxide for Efficient Alkaline Hydrogen Evolution by Oxygen Vacancy Engineering.

As a promising bifunctional electrocatalyst for water splitting, NiFe-layered double hydroxide (NiFe LDH) demonstrates an excellent activity toward oxygen evolution reaction (OER) in alkaline solution. However, its hydrogen evolution reaction (HER) activity is challenged owing to the poor electronic conductivity and insufficient electrochemical active sites. Therefore, a three-dimensional self-supporting metal hydroxide/oxide electrode with abundant oxygen vacancies is prepared by electrodepositing CeO x nanoparticles on NiFe LDH nanosheets. According to the density functional theory calculations and experimental studies, the oxygen vacancies at the NiFe LDH/CeO x interface can be introduced successfully because of the positive charges accumulation resulting from the local electron potential difference between NiFe LDH and CeO x. The oxygen vacancies accelerate the electron/ion migration rates, facilitate the charge transfer, and increase the electrochemical active sites, which give rise to an efficient activity toward HER in alkaline solution. Furthermore, NF@NiFe LDH/CeO x needs a lower potential of 1.51 V to drive a current density of 10 mA cm-2 in overall water splitting and demonstrates a superior performance compared with the benchmark Pt/C and RuO2, which is indicated to be a promising bifunctional electrode catalyst.

Ising Superconductivity and Quantum Phase Transition in Macro-Size Monolayer NbSe2.

Two-dimensional (2D) transition metal dichalcogenides (TMDs) have a range of unique physics properties and could be used in the development of electronics, photonics, spintronics, and quantum computing devices. The mechanical exfoliation technique of microsize TMD flakes has attracted particular interest due to its simplicity and cost effectiveness. However, for most applications, large-area and high-quality films are preferred. Furthermore, when the thickness of crystalline films is down to the 2D limit (monolayer), exotic properties can be expected due to the quantum confinement and symmetry breaking. In this paper, we have successfully prepared macro-size atomically flat monolayer NbSe2 films on bilayer graphene terminated surface of 6H-SiC(0001) substrates by a molecular beam epitaxy (MBE) method. The films exhibit an onset superconducting critical transition temperature (Tconset) above 6 K and the zero resistance superconducting critical transition temperature (Tczero) up to 2.40 K. Simultaneously, the transport measurements at high magnetic fields and low temperatures reveal that the parallel characteristic field Bc//(T = 0) is above 5 times of the paramagnetic limiting field, consistent with Zeeman-protected Ising superconductivity mechanism. Besides, by ultralow temperature electrical transport measurements, the monolayer NbSe2 film shows the signature of quantum Griffiths singularity (QGS) when approaching the zero-temperature quantum critical point.

Discovery of robust in-plane ferroelectricity in atomic-thick SnTe.

Stable ferroelectricity with high transition temperature in nanostructures is needed for miniaturizing ferroelectric devices. Here, we report the discovery of the stable in-plane spontaneous polarization in atomic-thick tin telluride (SnTe), down to a 1-unit cell (UC) limit. The ferroelectric transition temperature T(c) of 1-UC SnTe film is greatly enhanced from the bulk value of 98 kelvin and reaches as high as 270 kelvin. Moreover, 2- to 4-UC SnTe films show robust ferroelectricity at room temperature. The interplay between semiconducting properties and ferroelectricity in this two-dimensional material may enable a wide range of applications in nonvolatile high-density memories, nanosensors, and electronics.

Thickness Dependence of the Quantum Anomalous Hall Effect in Magnetic Topological Insulator Films.

The evolution of the quantum anomalous Hall effect with the thickness of Cr-doped (Bi,Sb)2 Te3 magnetic topological insulator films is studied, revealing how the effect is caused by the interplay of the surface states, band-bending, and ferromagnetic exchange energy. Homogeneity in ferromagnetism is found to be the key to high-temperature quantum anomalous Hall material.

Observation of Double-Dome Superconductivity in Potassium-Doped FeSe Thin Films.

We report on the emergence of two disconnected superconducting domes in alkali-metal potassium- (K-)doped FeSe ultrathin films grown on graphitized SiC(0001). The superconductivity exhibits hypersensitivity to K dosage in the lower-T_{c} dome, whereas in the heavily electron-doped higher-T_{c} dome it becomes spatially homogeneous and robust against disorder, supportive of a conventional Cooper-pairing mechanism. Furthermore, the heavily K-doped multilayer FeSe films all reveal a large superconducting gap of ∼14 meV, irrespective of film thickness, verifying the higher-T_{c} superconductivity only in the topmost FeSe layer. The unusual finding of a double-dome superconducting phase is a step towards the mechanistic understanding of superconductivity in FeSe-derived superconductors.

Mapping the Electronic Structure of Each Ingredient Oxide Layer of High-T\{c} Cuprate Superconductor Bi{2}Sr{2}CaCu{2}O{8+δ}.

Understanding the mechanism of high transition temperature (T{c}) superconductivity in cuprates has been hindered by the apparent complexity of their multilayered crystal structure. Using a cryogenic scanning tunneling microscopy (STM), we report on layer-by-layer probing of the electronic structures of all ingredient planes (BiO, SrO, CuO{2}) of Bi{2}Sr{2}CaCu_2}O{8+δ} superconductor prepared by argon-ion bombardment and annealing technique. We show that the well-known pseudogap (PG) feature observed by STM is inherently a property of the BiO planes and thus irrelevant directly to Cooper pairing. The SrO planes exhibit an unexpected van Hove singularity near the Fermi level, while the CuO{2} planes are exclusively characterized by a smaller gap inside the PG. The small gap becomes invisible near T{c}, which we identify as the superconducting gap. The above results constitute severe constraints on any microscopic model for high T{c} superconductivity in cuprates.

Probing Dirac fermion dynamics in topological insulator Bi2Se3 films with a scanning tunneling microscope.

Scanning tunneling microscopy and spectroscopy have been used to investigate the femtosecond dynamics of Dirac fermions in the topological insulator Bi2Se3 ultrathin films. At the two-dimensional limit, bulk electrons become quantized and the quantization can be controlled by the film thickness at a single quintuple layer level. By studying the spatial decay of standing waves (quasiparticle interference patterns) off steps, we measure directly the energy and film thickness dependence of the phase relaxation length lϕ and inelastic scattering lifetime τ of topological surface-state electrons. We find that τ exhibits a remarkable (E - EF)(-2) energy dependence and increases with film thickness. We show that the features revealed are typical for electron-electron scattering between surface and bulk states.

Detection of a superconducting phase in a two-atom layer of hexagonal Ga film grown on semiconducting GaN(0001).

The recent observation of the superconducting state at atomic scale has motivated the pursuit of exotic condensed phases in two-dimensional (2D) systems. Here we report on a superconducting phase in two-monolayer crystalline Ga films epitaxially grown on wide-band-gap semiconductor GaN(0001). This phase exhibits a hexagonal structure and only 0.552 nm in thickness, nevertheless, brings about a superconducting transition temperature Tc as high as 5.4 K, confirmed by in situ scanning tunneling spectroscopy and ex situ electrical magnetotransport and magnetization measurements. The anisotropy of critical magnetic field and Berezinski-Kosterlitz-Thouless-like transition are observed, typical for the 2D superconductivity. Our results demonstrate a novel platform for exploring atomic-scale 2D superconductors, with great potential for understanding the interface superconductivity.

Topological states modulation of Bi and Sb thin films by atomic adsorption.

Based on first-principles calculations, we systematically investigated the topological surface states of Bi and Sb thin films of 1-5 bilayers in (111) orientation without and with H(F) adsorption, respectively. We find that compared with clean Bi and Sb films, a huge band gap advantageous to observe the quantum spin Hall effect can be opened in chemically decorated bilayer Bi and Sb films, and the quantum phase transition from trivial (non-trivial) to non-trivial (trivial) phase is induced for a three bilayer Bi film and single (four) bilayer Sb film. Surface adsorption is an effective tool to manipulate the geometry, electronic structures and topological properties of film materials.

Scanning tunneling microscopy studies of topological insulators.

Scanning tunneling microscopy (STM), with surface sensitivity, is an ideal tool to probe the intriguing properties of the surface state of topological insulators (TIs) and topological crystalline insulators (TCIs). We summarize the recent progress on those topological phases revealed by STM studies. STM observations have directly confirmed the existence of the topological surface states and clearly revealed their novel properties. We also discuss STM work on magnetic doped TIs, topological superconductors and crystalline symmetry-protected surface states in TCIs. The studies have greatly promoted our understanding of the exotic properties of the new topological phases, as well as put forward new challenges. STM will continue to play an important role in this rapidly growing field from the point view of both fundamental physics and applications.

Experimental observation of Dirac-like surface states and topological phase transition in Pb(1-x)Sn(x)Te(111) films.

The surface of a topological crystalline insulator (TCI) carries an even number of Dirac cones protected by crystalline symmetry. We epitaxially grew high-quality Pb(1-x)Sn(x)Te(111) films and investigated the TCI phase by in situ angle-resolved photoemission spectroscopy. Pb(1-x)Sn(x)Te(111) films undergo a topological phase transition from a trivial insulator to TCI via increasing the Sn/Pb ratio, accompanied by a crossover from n-type to p-type doping. In addition, a hybridization gap is opened in the surface states when the thickness of the film is reduced to the two-dimensional limit. The work demonstrates an approach to manipulating the topological properties of TCI, which is of importance for future fundamental research and applications based on TCI.