RESUMEN
We study the timescale of random telegraph noise (RTN) of nanomagnets in stochastic magnetic tunnel junctions (MTJs). From analytical and numerical calculations based on the Landau-Lifshitz-Gilbert and the Fokker-Planck equations, we reveal mechanisms governing the relaxation time of perpendicular easy-axis MTJs (p-MTJs) and in-plane easy-axis MTJs (i-MTJs), showing that i-MTJs can be made to have faster RTN. Superparamagnetic i-MTJs with small in-plane anisotropy and sizable perpendicular effective anisotropy show relaxation times down to 8 ns at negligible bias current, which is more than 5 orders of magnitude shorter than that of typical stochastic p-MTJs and about 100 times faster than the shortest time of i-MTJs reported so far. The findings give a new insight and foundation in developing stochastic MTJs for high-performance probabilistic computers.
RESUMEN
Nanoscale magnetic tunnel junctions play a pivotal role in magnetoresistive random access memories. Successful implementation depends on a simultaneous achievement of low switching current for the magnetization switching by spin transfer torque and high thermal stability, along with a continuous reduction of junction size. Perpendicular easy-axis CoFeB/MgO stacks possessing interfacial anisotropy have paved the way down to 20-nm scale, below which a new approach needs to be explored. Here we show magnetic tunnel junctions that satisfy the requirements at ultrafine scale by revisiting shape anisotropy, which is a classical part of magnetic anisotropy but has not been fully utilized in the current perpendicular systems. Magnetization switching solely driven by current is achieved for junctions smaller than 10 nm where sufficient thermal stability is provided by shape anisotropy without adopting new material systems. This work is expected to push forward the development of magnetic tunnel junctions toward single-digit nm-scale nano-magnetics/spintronics.
