RESUMEN
We demonstrate experimentally all-optical switching on a silicon chip at telecom wavelengths. The switching device comprises a compact ring resonator formed by horizontal silicon slot waveguides filled with highly nonlinear silicon nanocrystals in silica. When pumping at power levels about 100 mW using 10 ps pulses, more than 50% modulation depth is observed at the switch output. The switch performs about 1 order of magnitude faster than previous approaches on silicon and is fully fabricated using complementary metal oxide semiconductor technologies.
Asunto(s)
Nanoestructuras/química , Nanotecnología/métodos , Dispositivos Ópticos , Silicio/química , Telecomunicaciones , Dióxido de Silicio/químicaRESUMEN
Si-based horizontal slot waveguides coupled to ring resonators have been fabricated and characterised. The central layer of the slot has been filled by Silicon nanocrystals (Si-nc) obtained by deposition of silicon rich silicon oxide and then thermal annealing. A comparison of various deposition and annealing parameters to form the Si-nc is performed. Propagation losses as low as 3 dB/cm and ring resonator quality factor of 30,000 have been achieved at 1550 nm.
