4 channel × 10 Gb/s bidirectional optical subassembly using silicon optical bench with precise passive optical alignment.

We demonstrate an advanced structure for optical interconnect consisting of 4 channel × 10 Gb/s bidirectional optical subassembly (BOSA) formed using silicon optical bench (SiOB) with tapered fiber guiding holes (TFGHs) for precise and passive optical alignment of vertical-cavity surface-emitting laser (VCSEL)-to-multi mode fiber (MMF) and MMF-to-photodiode (PD). The co-planar waveguide (CPW) transmission line (Tline) was formed on the backside of silicon substrate to reduce the insertion loss of electrical data signal. The 4 channel VCSEL and PD array are attached at the end of CPW Tline using a flip-chip bonder and solder pad. The 12-channel ribbon fiber is simply inserted into the TFGHs of SiOB and is passively aligned to the VCSEL and PD in which no additional coupling optics are required. The fabricated BOSA shows high coupling efficiency and good performance with the clearly open eye patterns and a very low bit error rate of less than 10-12 order at a data rate of 10 Gb/s with a PRBS pattern of 231-1.

Shape-controllable, bottom-up fabrication of microlens using oblique angle deposition.

This Letter reports a novel method for the simple fabrication of microlens arrays with a controlled shape and diameter on glass substrates. Multilayer stacks of silicon dioxide deposited by oblique angle deposition with hole mask patterns enable microlens formation. Precise control of mask height and distance, as well as oblique angle steps between deposited layers, supports the controllability of microlens geometry. The fabricated microlens arrays with designed geometry exhibit uniform optical properties.

AuAg bimetallic nonalloyed nanoparticles on a periodically nanostructured GaAs substrate for enhancing light trapping.

We present a light trapping structure consisting of AuAg bimetallic nonalloyed nanoparticles (BNNPs) on cone-shaped GaAs subwavelength structures (SWSs), combining the advantages of plasmonic structures and SWSs for GaAs-based solar cell applications. To obtain efficient light trapping in solar cells, the optical properties' dependence on the size and composition of the Ag and Au metal nanoparticles was systematically investigated. Cone-shaped GaAs SWSs with AuAg BNNPs formed from an Au film of 12 nm and an Ag film of 10 nm exhibited the extremely low average reflectance (R(avg)) of 2.43% and the solar-weighted reflectance (SWR) of 2.38%, compared to that of a bare GaAs substrate (R(avg), 37.50%; SWR, 36.72%) in the wavelength range of 300 to 870 nm.

Electro-absorption modulator with an asymmetric coupled triple quantum well for low-voltage operation.

We present an electro-absorption modulator based on the enhanced electro-optic effect of an asymmetric coupled triple quantum well (ACTQW) to achieve a large transmittance difference at a low driving voltage for high-definition (HD) three-dimensional (3D) imaging applications. Our numerical calculations show that an ACTQW structure can provide a significantly lower-voltage operation without degrading the absorption coefficient change at the operating wavelength of 850 nm. The fabricated electro-absorption modulator (EAM) based on an ACTQW shows that the operating voltage can be reduced by nearly 50% compared with an EAM based on a conventional rectangular quantum well while also achieving a large transmittance difference in excess of 50%, which is in good agreement with the numerical calculation results. These results suggest that using an EAM with an ACTQW is a promising approach for the realization of a high-resolution 3D imaging system.

Coupled tandem cavities based electro-absorption modulator with asymmetric tandem quantum well for high modulation performance at low driving voltage.

We propose and demonstrate a new electro-absorption modulator (EAM) based on coupled tandem cavities (CTC) having asymmetric tandem quantum well (ATQW) structure with separated electrode configuration to achieve large transmittance change over a broad spectral range at low driving voltage for high definition (HD) 3D imaging applications. Our theoretical calculations show that CTC with ATQW structure can provide large transmittance change over a wide spectral range at low driving voltage. By introducing separated electrode configuration, the fabricated EAM having CTC with ATQW structure shows a large transmittance change over 50%, almost three times larger spectral bandwidth compared to that of EAM having single cavity with a single thickness quantum well without significantly increasing the applied voltage. In addition, the CTC with ATQW structure also shows high speed modulation up to 28 MHz for the device having a large area of 2 mm x 0.5 mm. This high transmittance change, large spectral bandwidth and low voltage operation over a large device area for the EAM having CTC with ATQW demonstrates their huge potential as an optical image modulator for HD 3D imaging applications.

Wide spectral bandwidth electro-absorption modulator using coupled micro-cavity with asymmetric tandem quantum well.

For reliable three dimensional (3D) imaging system, it is necessary for the optical shutter to have a wide spectral bandwidth operation and enhanced modulation depth. We propose an electro-absorption modulator (EAM) based on coupled Fabry-Perot cavities with micro-cavity (CCMC) which uses asymmetric tandem quantum wells (ATQWs) to obtain improved spectral bandwidth and enhanced modulation depth. Several modulator designs are investigated to obtain improved modulation performance such as wider spectral bandwidth and enhanced modulation depth. It was found that among all the studied modulator geometries, CCMC structure with ATQWs provides the widest spectral bandwidth of 9.6nm and high modulation depth in excess of 50% at -24V, which is good agreement with theoretical calculations. These results suggest that EAM has excellent potential as optical shutter for 3D imaging application.

Large aperture asymmetric Fabry Perot modulator based on asymmetric tandem quantum well for low voltage operation.

Large aperture image modulators used as demodulator in receiver path are an important component for the use in three dimensional (3D) image sensing. For practical applications, low voltage operation and high modulation performance are the key requirements for modulators. Here, we propose an asymmetric Fabry-Perot modulator (AFPM) with asymmetric tandem quantum wells (ATQWs) for 3D image sensing. By using ATQWs for the AFPM design, the device operated at -4.25V, and the operating voltage was significantly lower by about 23% compared to -5.5V of a conventional AFPM with 8nm thick multiple QW with a single QW thickness (SQWs), while achieving high reflectivity modulation in excess of 50%. The performance of the fabricated devices is in good agreement with theoretical calculations. The pixelated device shows a high modulation speed of 21.8 MHz over a large aperture and good uniformity. These results show that AFPM with ATQWs is a good candidate as an optical image modulator for 3D image sensing applications.