An effective oxidation approach for luminescence enhancement in CdS quantum dots by H2O2.

The effects of surface passivation on the photoluminescence (PL) properties of CdS nanoparticles oxidized by straightforward H2O2 injection were examined. Compared to pristine cadmium sulfide nanocrystals (quantum efficiency ≅ 0.1%), the surface-passivated CdS nanoparticles showed significantly enhanced luminescence properties (quantum efficiency ≅ 20%). The surface passivation by H2O2 injection was characterized using X-ray photoelectron spectroscopy, X-ray diffraction, and time-resolved PL. The photoluminescence enhancement is due to the two-order increase in the radiative recombination rate by the sulfate passivation layer.

Photoluminescence enhancement in CdS quantum dots by thermal annealing.

The photoluminescence behavior of CdS quantum dots in initial growth stage was studied in connection with an annealing process. Compared to the as-synthesized CdS quantum dots (quantum efficiency ≅ 1%), the heat-treated sample showed enhanced luminescence properties (quantum efficiency ≅ 29%) with a narrow band-edge emission. The simple annealing process diminished the accumulated defect states within the nanoparticles and thereby reduced the nonradiative recombination, which was confirmed by diffraction, absorption, and time-resolved photoluminescence. Consequently, the highly luminescent and defect-free nanoparticles were obtained by a facile and straightforward process.