IGZO/SnOx-based dynamic memristor with fading memory effect for reservoir computing.

We investigate a synaptic device with short-term memory characteristics using IGZO/SnOx as the switching layer. The thickness and components of each layer are analyzed by using x-ray photoelectron spectroscopy and transmission electron microscopy. The memristor exhibits analog resistive switching and a volatile feature with current decay over time. Moreover, through ten cycles of potentiation and depression, we demonstrate stable conductance modulation, leading to high-accuracy Modified National Institute of Standards and Technology pattern recognition. We effectively emulate the learning system of a biological synapse, including paired-pulse facilitation, spiking-amplitude-dependent plasticity, and spiking-rate-dependent plasticity (SRDP) by pulse trains. Ultimately, 4-bit reservoir computing divided into 16 states is incarnated using a pulse stream considering short-term memory plasticity and decay properties.

Graph Representation Learning and Its Applications: A Survey.

Graphs are data structures that effectively represent relational data in the real world. Graph representation learning is a significant task since it could facilitate various downstream tasks, such as node classification, link prediction, etc. Graph representation learning aims to map graph entities to low-dimensional vectors while preserving graph structure and entity relationships. Over the decades, many models have been proposed for graph representation learning. This paper aims to show a comprehensive picture of graph representation learning models, including traditional and state-of-the-art models on various graphs in different geometric spaces. First, we begin with five types of graph embedding models: graph kernels, matrix factorization models, shallow models, deep-learning models, and non-Euclidean models. In addition, we also discuss graph transformer models and Gaussian embedding models. Second, we present practical applications of graph embedding models, from constructing graphs for specific domains to applying models to solve tasks. Finally, we discuss challenges for existing models and future research directions in detail. As a result, this paper provides a structured overview of the diversity of graph embedding models.

High-Performance Organic Source-Gated Transistors Enabled by the Indium-Tin Oxide-Diketopyrrolopyrrole Polymer Interface.

Source-gated transistors are a new driver of low-power high-gain thin-film electronics. However, source-gated transistors based on organic semiconductors are not widely investigated yet despite their potential for future display and sensor technologies. We report on the fabrication and modeling of high-performance organic source-gated transistors utilizing a critical junction formed between indium-tin oxide and diketopyrrolopyrrole polymer. This partially blocked hole-injection interface is shown to offer both a sufficient level of drain currents and a strong depletion effect necessary for source pinch-off. As a result, our transistors exhibit a set of outstanding metrics, including an intrinsic gain of 160 V/V, an output resistance of 4.6 GΩ, and a saturation coefficient of 0.2 at an operating voltage of 5 V. Drift-diffusion simulation is employed to reproduce and rationalize the experimental data. The modeling reveals that the effective contact length is significantly reduced in an interdigitated electrode geometry, eventually contributing to the realization of low-voltage saturation.

The Effect of Gate Work Function and Electrode Gap on Wide Band-Gap Sn-Doped α-Ga2O3 Metal-Semiconductor Field-Effect Transistors.

We present technology computer aided design (TCAD) results for wide band-gap Sn-doped α-Ga2O3 metal-semiconductor field-effect transistors (MESFETs). In particular, the effect of gate work function and electrode gap length on the electrical characteristics is demonstrated for a thorough understanding of the behavior of such devices. The gate work function significantly affects the reverse bias drain current under the gate-current dominant regime, whereas a gate-source/drain gap larger than 0.1 µm has a negligible effect on the drain current.

A TIPS-TPDO-tetraCN-Based n-Type Organic Field-Effect Transistor with a Cross-linked PMMA Polymer Gate Dielectric.

Recent improvement in the performance of the n-type organic semiconductors as well as thin gate dielectrics based on cross-linked polymers offers new opportunities to develop high-performance low-voltage n-type OFETs suitable for organic complementary circuits. Using TIPS-tetracyanotriphenodioxazine (TIPS-TPDO-tetraCN) and cross-linked poly(methyl methacrylate) (c-PMMA), respectively as n-type organic semiconductor and gate dielectric, linear regime field-effect mobility (1.8 ± 0.2) × 10(-2) cm(2) V(-1)s(-1), small spatial standard deviation of threshold voltage (∼0.1 V), and operating voltage less than 3 V are attainable with the same device structure and contact materials used commonly for p-type OFETs. Through comparative static and dynamic characterizations of c-PMMA and PMMA gate dielectrics, it is shown that both smaller thickness and larger relative permittivity of c-PMMA contributes to reduced operating voltage. Furthermore, negligible hysteresis brings evidence to small trap states in the semiconductor near gate dielectric of the n-type OFETs with c-PMMA. The use of TIPS-TPDO-tetraCN and c-PMMA is fully compatible with polyethylene terephthalate substrate, giving promise to various flexible applications.

Clinical results of endoscopic sciatic nerve decompression for deep gluteal syndrome: mean 2-year follow-up.

BACKGROUND: The purpose of this study is to assess the effectiveness of endoscopic sciatic nerve decompression and evaluated the differences of clinical results between atraumatic and traumatic groups. METHODS: Sixty consecutive patients. We retrospectively reviewed sixty consecutive patients without major trauma (45 hips) or with major trauma (15 hips) groups to compare the outcomes of endoscopic treatment.). The mean follow-up period was 24 ± 2.6 months (range, 24-38.4 months). RESULTS: The mean duration of symptoms was 14.1 months (range, 12 to 32 months). Compromising structures were piriformis muscle, fibrovascular bundles, and adhesion with scar tissues. The mean VAS score for pain decreased from 7.4 ± 1.5 to 2.6 ± 1.5 (P = .001). The mean mHHS increased from 81.7 ± 9.6 to 91.8 ± 7.6 (P = .003). Clinically, positive paresthesia and seated piriformis test were statistically significant to diagnosis sciatic entrapment syndrome. Paresthesia and sitting pain were significantly improved at the final follow-up (P = .002). More favorable outcome was observed a group without major trauma. No complication was observed. CONCLUSIONS: Endoscopic sciatic nerve decompression is a safe and effective procedure for the management of DGS. Patients with major trauma could have poor clinical outcome. Seated piriformis test, FADIR, and tenderness of sciatic notch are maybe useful guide for pre and postoperative evaluation of DGS.