Antireflection Structures for VIS and NIR on Arbitrarily Shaped Fused Silica Substrates with Colloidal Polystyrene Nanosphere Lithography.

Antireflective (AR) nanostructures offer an effective, broadband alternative to conventional AR coatings that could be used even under extreme conditions. In this publication, a possible fabrication process based on colloidal polystyrene (PS) nanosphere lithography for the fabrication of such AR structures on arbitrarily shaped fused silica substrates is presented and evaluated. Special emphasis is placed on the involved manufacturing steps in order to be able to produce tailored and effective structures. An improved Langmuir-Blodgett self-assembly lithography technique enabled the deposition of 200 nm PS spheres on curved surfaces, independent of shape or material-specific characteristics such as hydrophobicity. The AR structures were fabricated on planar fused silica wafers and aspherical planoconvex lenses. Broadband AR structures with losses (reflection + transmissive scattering) of <1% per surface in the spectral range of 750-2000 nm were produced. At the best performance level, losses were less than 0.5%, which corresponds to an improvement factor of 6.7 compared to unstructured reference substrates.

Optical properties of black silicon structures ALD-coated with Al2O3.

Atomic layer deposited (ALD) Al2O3coatings were applied on black silicon (b-Si) structures. The coated nanostructures were investigated regarding their reflective and transmissive behaviour. For a systematic study of the influence of the Al2O3coating, ALD coatings with a varying layer thickness were deposited on three b-Si structures with different morphologies. With a scanning electron microscope the morphological evolution of the coating process on the structures was examined. The optical characteristics of the different structures were investigated by spectral transmission and reflection measurements. The usability of the structures for highly efficient absorbers and antireflection (AR) functionalities in the different spectral regions is discussed.

Modular nonlinear hybrid plasmonic circuit.

Photonic integrated circuits (PICs) are revolutionizing nanotechnology, with far-reaching applications in telecommunications, molecular sensing, and quantum information. PIC designs rely on mature nanofabrication processes and readily available and optimised photonic components (gratings, splitters, couplers). Hybrid plasmonic elements can enhance PIC functionality (e.g., wavelength-scale polarization rotation, nanoscale optical volumes, and enhanced nonlinearities), but most PIC-compatible designs use single plasmonic elements, with more complex circuits typically requiring ab initio designs. Here we demonstrate a modular approach to post-processes off-the-shelf silicon-on-insulator (SOI) waveguides into hybrid plasmonic integrated circuits. These consist of a plasmonic rotator and a nanofocusser, which generate the second harmonic frequency of the incoming light. We characterize each component's performance on the SOI waveguide, experimentally demonstrating intensity enhancements of more than 200 in an inferred mode area of 100 nm2, at a pump wavelength of 1320 nm. This modular approach to plasmonic circuitry makes the applications of this technology more practical.

175 nm period grating fabricated by i-line proximity mask-aligner lithography.

We report the fabrication of periodic structures with a critical dimension of 90 nm on a fused silica substrate by i-line (λ=365 nm) proximity mask-aligner lithography. This realization results from the combination of the improvements of the optical system in the mask aligner (known as MO exposure optics), short-period phase-mask optimization, and the implementation of self-aligned double patterning (SADP). A 350 nm period grating is transferred into a sacrificial polymer layer and coated with an aluminum layer. The removal of the metal initially present on the horizontal surfaces and on top of the polymer grating leaves a 175 nm period grating on the wafer, which can be used as a wire grid polarizer. A computation of the efficiency is performed from the measured profile and confirms the deep-blue visible to infra-red operation range.

Double-sided structured mask for sub-micron resolution proximity i-line mask-aligner lithography.

Diffractive mask-aligner lithography allows printing structures that have a sub-micrometer resolution by using non-contact mode. For such a purpose, masks are often designed to operate with monochromatic linearly polarized light, which is obtained by placing a spectral filter and a polarizer in the beam path. We propose here a mask design that includes a wire-grid polarizer (WGP) on the top side of a photo-mask and a diffractive element on the bottom one to print a 350 nm period grating by using a classical mask-aligner in proximity exposure mode. Linearly polarizing locally an unpolarized incident beam is only possible by using a WGP on the top side of the mask. This configuration opens the possibility to use different linear polarization orientation on a single mask and allows to print high resolution structures with different orientation within one exposure.

250 nm period grating transferred by proximity i-line mask-aligner lithography.

This Letter, describes a fabrication method based on a high refractive index binary phase mask combined with a suitable illumination setup, which produces a close to normal incidence illumination, to fabricate sub-micrometer diffraction gratings. The method uses the i-line (365 nm) of a mercury lamp spectrum in a mask-aligner in proximity mode, to avoid any contact between the mask and the wafer, which is normally used to produce high resolution structures. The transfer of the structure in a fused silica wafer demonstrates that mask-aligner lithography can produce high aspect ratio sub-wavelength structures without resorting to any contact between mask and wafer.

Influence of black silicon surfaces on the performance of back-contacted back silicon heterojunction solar cells.

The influence of different black silicon (b-Si) front side textures prepared by inductively coupled reactive ion etching (ICP-RIE) on the performance of back-contacted back silicon heterojunction (BCB-SHJ) solar cells is investigated in detail regarding their optical performance, black silicon surface passivation and internal quantum efficiency. Under optimized conditions the effective minority carrier lifetime measured on black silicon surfaces passivated with Al(2)O(3) can be higher than lifetimes measured for the SiO(2)/SiN(x) passivation stack used in the reference cells with standard KOH textures. However, to outperform the electrical current of silicon back-contact cells, the black silicon back-contact cell process needs to be optimized with aspect to chemical and thermal stability of the used dielectric layer combination on the cell.

Silicon wire grid polarizer for ultraviolet applications.

We present a silicon wire grid polarizer operating down to a wavelength of 300 nm. Besides metallic grating materials, semiconductors also offer appropriate material properties to realize wire grid polarizers in the ultraviolet (UV) spectral range. The presented polarizer with a period of 140 nm was realized by means of electron beam lithography and dry etching using amorphous silicon as the grating material. At a wavelength of 365 nm, a transmission of 42% and an extinction ratio of 90 (19.5 dB) are measured. The spectral bandwidth of these polarizers in the UV-spectral range is about 100 nm.

Coupled grating reflectors with highly angular tolerant reflectance.

We report on stacked high-contrast grating reflectors with virtually angular independent reflectance for transverse-magnetic polarized light. The investigated structure consists of two-layer pairs of amorphous silicon and silicondioxide that are designed for a wavelengths of 1550 nm. The large angular tolerance results from coupling of the two involved silicon gratings and is achieved if the modal fields in the reflectors are matched. With this approach, a reflectance of more than 96% in the entire angular spectrum is feasible. Experimentally we demonstrate a reflectance of more than 98% for incidence angles up to 60° and more than 90% up to 80°.

Angular bandpass filters based on dielectric resonant waveguide gratings.

We report on a novel concept for transmissive optical elements based on resonant waveguide gratings (RWGs), which enables the realization of direction selective filters. Hereby, the broadband reflectivity of an RWG for nearly normal incidence angles is combined with high diffractive efficiency in transmission for a specific angle of incidence. Silicon is used as material with high refractive index and good compatibility with semiconductor fabrication. By adjusting the grating parameters different transmission angles and angular widths of the transmission range are feasible. First experimental results of the introduced filters provide a high transmission up to 63% at an incidence angle of 45° with a full width at half maximum of 20°.

Plasmonic properties of aluminum nanorings generated by double patterning.

In this Letter we evaluate a technique for the efficient and flexible generation of aluminum nanorings based on double patterning and variable shaped electron beam lithography. The process is demonstrated by realizing nanorings with diameters down to 90 nm and feature sizes of 30 nm utilizing a writing speed of one ring per microsecond. Because of redepositions caused by involved etching processes, the material of the rings and, therefore, the impact on the plasmonic properties, are unknown. This issue, which is commonly encountered when metals are nanostructured, is solved by adapting a realistic simulation model that accounts for geometry details and effective material properties. Based on this model, the redepositions are quantified, the plasmonic properties are investigated, and a design tool for the very general class of nanofabrication techniques involving the etching of metals is provided.

Tungsten wire grid polarizer for applications in the DUV spectral range.

In this paper, we present a broadband wire grid polarizer with a spectral working range down to a wavelength of 193 nm. Tungsten is chosen as grating material because it provides a high extinction ratio and transmission compared with other common grating materials. The fabrication of the grating with 100 nm period was accomplished using a spatial frequency doubling approach based on ultrafast electron beam lithography and a sophisticated deposition technique. At a wavelength of 193 nm, a transmission of about 44% and an extinction ratio of 20 was measured.

Iridium wire grid polarizer fabricated using atomic layer deposition.

In this work, an effective multistep process toward fabrication of an iridium wire grid polarizer for UV applications involving a frequency doubling process based on ultrafast electron beam lithography and atomic layer deposition is presented. The choice of iridium as grating material is based on its good optical properties and a superior oxidation resistance. Furthermore, atomic layer deposition of iridium allows a precise adjustment of the structural parameters of the grating much better than other deposition techniques like sputtering for example. At the target wavelength of 250 nm, a transmission of about 45% and an extinction ratio of 87 are achieved.

Reflective cavity couplers based on resonant waveguide gratings.

We report on a novel concept for reflective diffractive cavity couplers based on resonant waveguide gratings instead of multilayer coatings. The diffracting or rather beam splitting properties are induced to the subwavelength structures by a periodic parameter modulation of the ridges. Since such a perturbation of the highly reflective system also enhances transmission stacks of two and three reflectors are considered to retrieve transmittivities as low as possible. Our calculations show that transmissions of less than 10(-4) are possible for different configurations based on silicon and silica. The results of first technological tests for the realization of stacked T-shape structures are presented. With a total effective layer thickness not exceeding 1.1 µm the discussed approaches are expected to remarkably reduce the urgent problem of coating thermal noise of conventional components for high-precision metrology.

Broadband iridium wire grid polarizer for UV applications.

In this Letter, we present an iridium wire grid polarizer with a large spectral working range from IR down to the UV spectral region. The required grating period of 100 nm for an application below a wavelength of 300 nm was realized using a spatial frequency doubling technique based on ultrafast electron beam writing. The optical performance of the polarizer at a wavelength of 300 nm is a transmittance of almost 60% and an extinction ratio of about 30 (15 dB). Furthermore, the oxidation resistance is discussed.

Thermal nonlinear effects in hybrid silica/polymer microdisks.

The linear and thermal nonlinear spectral responses of silica and hybrid silica/polymer microdisk resonators are investigated. Both types of resonators can be fabricated using the same technological procedure with only slight modification. An extra polymer layer results in opposite sign of the nonlinear thermal optical response of the hybrid microdisks compared to the pure silica ones, which can be explained by the different thermorefractive coefficients of silica and polymer. A full compensation of eigen frequency shift, caused by thermal nonlinearity, has been demonstrated experimentally.

Broadband antireflective structures applied to high resistive float zone silicon in the THz spectral range.

The optimal structural parameters for an antireflective structure in high resistive float zone silicon are deduced for a rectangular and a hexagonal structure. For this the dependence of the effective index from the filling factor was calculated for both grating types. The structures were manufactured by the Bosch-process. The required structural parameters for a continuous profile require an adaption of the fabrication process. Challenges are the depth and the slight positive slope of the structures. Starting point for the realization of the antireflective structures was the manufacturing of deep binary gratings. A rectangular structure and a hexagonal structure with period 50 mum and depth 500 mum were realized. Measurements with a THz time domain spectroscopy setup show an increase of the electric field amplitude of 15.2% for the rectangular grating and 21.76% for the hexagonal grating. The spectral analysis shows that the bandwidth of the hexagonal grating reaches from 0.1 to 2 THz.