Extracellular vesicles derived from endometrial epithelial cells deliver exogenous miR-92b-3p to affect the function of embryonic trophoblast cells via targeting TSC1 and DKK3.

BACKGROUND: Extracellular vesicles (EVs) could mediate embryo-maternal communication to affect embryo implantation by delivering biology information, including microRNA (miRNA), protein, lipid. Our previous research shows that miR-92b-3p was differentially expressed in EVs of uterine flushing fluids during the embryo implantation period. However, the role of miR-92b-3p from EVs in embryo implantation remains elusive. MATERIALS AND METHODS: EVs were isolated from porcine endometrial epithelial cells (EECs) by ultracentrifugation. MiR-92b-3p mimics and EVs were used to regulate the expression of miR-92b-3p in porcine trophoblast cells (PTr2 cells). Cell proliferation, migration and adhesion analyses were used to observe the phenotype. RT-qPCR, western blot and dual-luciferase reporter assay were used to assess the targets of miR-92b-3p. RESULTS: In this study, EVs derived from porcine EECs were identified and could be taken up by PTr2 cells. We found that the EVs derived from EECs transfected with miR-92b-3p mimic (EVs-miR-92b-3p) significantly promoted the proliferation, migration and adhesion of PTr2 cells. We verified that Tuberous sclerosis complex subunit (TSC1) and Dickkopf 3 (DKK3) were the target genes of miR-92b-3p. Moreover, our study showed that miR-92b-3p plays a vital role in PTr2 cells via targeting TSC1 and DKK3. Furthermore, the 3'UTR vectors of TSC1 and DKK3 can rescue the effect of miR-92b-3p on PTr2 cells. CONCLUSIONS: Taken together, this study reveals a novel mechanism that EVs derived from porcine EECs treated with miR-92b-3p crosstalk with trophoblasts by targeting TSC1 and DKK3, leading to an enhanced ability for implantation.

Nontrivial Giant Linear Magnetoresistance in Nodal-Line Semimetal ZrGeSe 2D Layers.

Linear magnetoresistance (LMR) is usually observed in topological quantum materials and plausibly connected with the topologically nontrivial surface state with Dirac-cone-like linear dispersion because the frequently encountered large Hall resistivity can be trivially mixed into the LMR via charge inhomogeneity. Herein, by applying an optimal gate voltage to nodal-line semimetal ZrGeSe two-dimensional (2D) layers with specific thicknesses, we observe a giant nonsaturated LMR of 8 × 104% at 2 K and a magnetic field of 9 T. This giant LMR is accompanied by a very small Hall resistivity, which is inconsistent with the charge inhomogeneity mechanism. Our systematic results confirm that the giant LMR is maximized when the topological semimetal is in the "even-metal" regime and suppressed upon evolution to the normal "odd-metal" regime. The "even-to-odd" transition is universal regardless of the thicknesses of the crystals. A comparison with Abrikosov's quantum LMR theory indicates that the observed LMR cannot be trivial.

Reversible engineering of topological insulator surface state conductivity through optical excitation.

Despite the broadband response, limited optical absorption at a particular wavelength hinders the development of optoelectronics based on Dirac fermions. Heterostructures of graphene and various semiconductors have been explored for this purpose, while non-ideal interfaces often limit the performance. The topological insulator (TI) is a natural hybrid system, with the surface states hosting high-mobility Dirac fermions and the small-bandgap semiconducting bulk state strongly absorbing light. In this work, we show a large photocurrent response from a field effect transistor device based on intrinsic TI Sn-Bi1.1Sb0.9Te2S (Sn-BSTS). The photocurrent response is non-volatile and sensitively depends on the initial Fermi energy of the surface state, and it can be erased by controlling the gate voltage. Our observations can be explained with a remote photo-doping mechanism, in which the light excites the defects in the bulk and frees the localized carriers to the surface state. This photodoping modulates the surface state conductivity without compromising the mobility, and it also significantly modify the quantum Hall effect of the surface state. Our work thus illustrates a route to reversibly manipulate the surface states through optical excitation, shedding light into utilizing topological surface states for quantum optoelectronics.

InN superconducting phase transition.

InN superconductivity is very special among III-V semiconductors, as other III-V semiconductors (such as GaAs, GaN, InP, InAs, etc.) usually lack strong covalent bonding and thus seldom show superconductivity at low temperatures. Here, we probe the different superconducting phase transitions in InN highlighted by its microstructure. Those chemical-unstable phase-separated inclusions, such as metallic indium or In2O3, are intentionally removed by HCl acid etching. The quasi-two-dimensional vortex liquid-glass transition is observed in the sample with a large InN grain size. In contrast, the superconducting properties of InN with a small grain size are sensitive to acid etching, showing a transition into a nonzero resistance state when the temperature approaches zero. Since the value of ξ0 (the zero-temperature-limit superconducting coherence length) is close to the grain size, it is suggested that individual InN grains and intergrain coupling should be responsible for the sample-dependent InN superconducting phase transition. Our work establishes a guideline for engineering superconductivity in III-nitride.

Physicochemical properties of casein-dextran nanoparticles prepared by controlled dry and wet heating.

Casein-dextran nanoparticles (CDNs) were prepared from casein-dextran conjugates by heating in a dry/wet state and then adjusting the pH to the isoelectric point of the protein (pH 4.6) to investigate their physicochemical characteristics. The effects of the dry and wet heating methods on the properties of the CDNs were also evaluated. The CDNs were spherically shaped and uniformly dispersed, as confirmed by atomic force microscopy. Compared with CDNs prepared by wet heating (CDN-W), those prepared by dry heating (CDN-D) were much smaller (P<0.05) and showed superior stability and enhanced the release of curcumin under simulated gastrointestinal conditions. However, both types exhibited the same encapsulation ability of curcumin. Meanwhile, the CDNs displayed good thermal, gastrointestinal and storage stability, and good redispersion behaviour. Our findings indicated CDN-D exhibited superior physicochemical properties and could serve as a potential delivery vehicle to encapsulate hydrophobic active ingredients to intestine.

Protective effect of surface layer proteins isolated from four Lactobacillus strains on hydrogen-peroxide-induced HT-29 cells oxidative stress.

The objective of this study was to explore the antioxidant effect of the surface layer proteins (SLPs) and their mechanism. We investigated four SLPs which were extracted from L. casei zhang, L. rhamnosus, L. gasseri and L. acidophilus NCFM respectively using LiCl. The protective effect of SLPs on H2O2-induced HT-29 cells oxidative injury was investigated. As results, SLPs (100µg/mL) could significantly mitigate HT-29 cells cytotoxicity, improve the activities of total antioxidant capacity (T-AOC), catalase (CAT) and superoxide dismutase (SOD), decrease the contents of malondialdehyde (MDA) and lactate dehydrogenase (LDH), compared with H2O2-induced group (P<0.05). Furthermore, SLPs were also shown to attenuate the apoptosis rate (10.94-24.03%, P<0.01), suppress the elevation of intracellular reactive oxygen species (ROS) and calcium levels, restore mitochondrial membrane potential (MMP) and block the activation of apoptosis-related proteins of caspase-3 and caspase-9 (P<0.05). Considering all the parameters analyzed, we concluded that Lactobacillus SLPs play an essential role in the antioxidant capacity of HT-29 cells induced by H2O2, and the mechanism could be attributed to SLPs' ability to enhance the activity of the intracellular antioxidant enzyme system, reduce ROS accumulation and to inhibit apoptosis by regulating mitochondrial pathway.

Terahertz characterization of semiconductor alloy AlInN: negative imaginary conductivity and its meaning.

Through terahertz time-domain spectroscopy, negative imaginary conductivity is observed in In-rich AlInN film grown by metal-organic chemical-vapor deposition for frequencies from 0.2 to 2.0 THz. This non-Drude behavior is explained based on the electron back-scattering theory of Smith [Phys. Rev. B65, 115206 (2002)]. Comparing with binary semiconductor InN, potential fluctuations produced by composition inhomogeneity and alloy scattering of carriers make In-rich AlInN alloy easier to be subjected to non-Drude behavior in electrical performance.