Determination of critical diameters for intrinsic carrier diffusion-length of GaN nanorods with cryo-scanning near-field optical microscopy.

Direct measurements of carrier diffusion in GaN nanorods with a designed InGaN/GaN layer-in-a-wire structure by scanning near-field optical microscopy (SNOM) were performed at liquid-helium temperatures of 10 K. Without an applied voltage, intrinsic diffusion lengths of photo-excited carriers were measured as the diameters of the nanorods differ from 50 to 800 nm. The critical diameter of nanorods for carrier diffusion is concluded as 170 nm with a statistical approach. Photoluminescence spectra were acquired for different positions of the SNOM tip on the nanorod, corresponding to the origins of the well-defined luminescence peaks, each being related to recombination-centers. The phenomenon originated from surface oxide by direct comparison of two nanorods with similar diameters in a single map has been observed and investigated.

Excitons and biexcitons in InGaN quantum dot like localization centers.

Indium segregation in a narrow InGaN single quantum well creates quantum dot (QD) like exciton localization centers. Cross-section transmission electron microscopy reveals varying shapes and lateral sizes in the range ∼1-5 nm of the QD-like features, while scanning near field optical microscopy demonstrates a highly inhomogeneous spatial distribution of optically active individual localization centers. Microphotoluminescence spectroscopy confirms the spectrally inhomogeneous distribution of localization centers, in which the exciton and the biexciton related emissions from single centers of varying geometry could be identified by means of excitation power dependencies. Interestingly, the biexciton binding energy (E(b)xx) was found to vary from center to center, between 3 to -22 meV, in correlation with the exciton emission energy. Negative binding energies are only justified by a three-dimensional quantum confinement, which confirms QD-like properties of the localization centers. The observed energy correlation is proposed to be understood as variations of the lateral extension of the confinement potential, which would yield smaller values of E(b)xx for reduced lateral extension and higher exciton emission energy. The proposed relation between lateral extension and E(b)xx is further supported by the exciton and the biexciton recombination lifetimes of a single QD, which suggest a lateral extension of merely ∼3 nm for a QD with strongly negative E(b)xx = -15.5 meV.

InGaN quantum dot formation mechanism on hexagonal GaN/InGaN/GaN pyramids.

Growing InGaN quantum dots (QDs) at the apex of hexagonal GaN pyramids is an elegant approach to achieve a deterministic positioning of QDs. Despite similar synthesis procedures by metal organic chemical vapor deposition, the optical properties of the QDs reported in the literature vary drastically. The QDs tend to exhibit either narrow or broad emission lines in the micro-photoluminescence spectra. By coupled microstructural and optical investigations, the QDs giving rise to narrow emission lines were concluded to nucleate in association with a (0001) facet at the apex of the GaN pyramid.

Symmetries and the polarized optical spectra of exciton complexes in quantum dots.

A systematic and simple theoretical approach is proposed to analyze true degeneracies and polarized decay patterns of exciton complexes in semiconductor quantum dots. The results provide reliable spectral signatures for efficient symmetry characterization, and predict original features for low C(2v) and high C(3v) symmetries. Excellent agreement with single quantum dot spectroscopy of real pyramidal InGaAs/AlGaAs quantum dots grown along [111] is demonstrated. The high sensitivity of biexciton quantum states to exact high symmetry can be turned into an efficient uninvasive postgrowth selection procedure for quantum entanglement applications.

Dynamic switching of hole character and single photon polarization using the quantum confined Stark effect in quantum dot-in-dot structures.

The engineering of the three-dimensional (3D) heterostructure potential in GaAs/AlGaAs pyramidal quantum dot-in-dots (DiDs) provides control over the valence band symmetry and hence on the polarization of the emitted photons. We propose a technique for dynamic switching of hole character and photon polarization in DiDs by means of an applied electric field. The structural parameters required for producing this effect are discussed. Asymmetric DiDs are found to be particularly suitable for obtaining switching with fields smaller than 1 kV cm( - 1). The proposed device enables generation of single photons with dynamic control on the photon polarization, with potential applications in quantum information technology.

Transition from two-dimensional to three-dimensional quantum confinement in semiconductor quantum wires/quantum dots.

We report the photoluminescence (PL) and polarization-resolved PL characteristics of a novel GaAs/AlGaAs quantum wire/dot semiconductor system, realized by metalorganic vapor-phase epitaxy of site-controlled, self-assembled nanostructures in inverted tetrahedral pyramids. By systematically changing the length of the quantum wires, we implement a continuous transition between the regimes of two-dimensional and three-dimensional quantum confinement. The two main evidences for this transition are observed experimentally and confirmed theoretically: (i) strongly blue-shifted ground-state emission, accompanied by increase separation of ground and excited transition energies; and (ii) change in the orientation of the main axis of linear polarization of the photoluminescence, from parallel to perpendicular with respect to the wire axis. This latter effect, whose origin is shown to be purely due to quantum confinement and valence band mixing, sets in at wire lengths of only approximately 30 nm.

Binding of peptides in solution by the Escherichia coli chaperone PapD as revealed using an inhibition ELISA and NMR spectroscopy.

PapD is the prototype member of a family of periplasmic chaperones which are required for assembly of virulence associated pili in pathogenic, gram-negative bacteria. In the present investigation, an ELISA has been developed for evaluation of compounds as inhibitors of PapD. Synthetic peptides, including an octamer, derived from the C-terminus of the pilus adhesin PapG were able to inhibit PapD in the ELISA. Evaluation of a panel of octapeptides in the ELISA, in combination with NMR studies, showed that the peptides were bound as extended beta-strands by PapD in aqueous solution. The PapD-peptide complex was stabilized by backbone to backbone hydrogen bonds and interactions involving three hydrophobic peptide side chains. This structural information, together with previous crystal structure data, provides a starting point in efforts to design and synthesize compounds which bind to chaperones and interfere with pilus assembly in pathogenic bacteria.

Transferred nuclear Overhauser effect spectroscopy study of a peptide from the PapG pilus subunit bound by the Escherichia coli PapD chaperone.

Interaction of the Escherichia coli PapD chaperone with the synthetic peptide PapG308-314 (Thr-Met-Val-Leu-Ser-Phe-Pro), corresponding to the seven C-terminal residues of the PapG pilus subunit, was studied by transferred nuclear Overhauser effect (TRNOE) spectroscopy. The observation of cross-peaks corresponding to either intraresidue or sequential C(alpha)H/NH and C(beta)H/NH TRNOEs and the absence of sequential NH(i)/NH(i+1) TRNOEs indicate that the peptide binds to PapD in an extended conformation. In addition, line-broadening effects gave information of the peptide's mode of interaction with PapD. These observations were in excellent agreement with a recent crystal structure of a PapG peptide complexed with PapD.