Quarter-Annulus Si-Photodetector with Equal Inner and Outer Radii of Curvature for Reflective Photoplethysmography Sensors.

Reflection-type photoplethysmography (PPG) pulse sensors used in wearable smart watches, true wireless stereo, etc., have been recently considered a key component for monitoring biological signals such as heart rate, SPO3, and blood pressure. Typically, the optical front end (OFE) of these PPG sensors is heterogeneously configured and packaged with light sources and receiver chips. In this paper, a novel quarter-annulus photodetector (NQAPD) with identical inner and outer radii of curvature has been developed using a plasma dicing process to realize a ring-type OFE receiver, which maximizes manufacturing efficiency and increases the detector collection area by 36.7% compared to the rectangular PD. The fabricated NQAPD exhibits a high quantum efficiency of over 90% in the wavelength of 500 nm to 740 nm and the highest quantum efficiency of 95% with a responsivity of 0.41 A/W at the wavelength of 530 nm. Also, the NQAPD is shown to increase the SNR of the PPG signal by 5 to 7.6 dB compared to the eight rectangular PDs. Thus, reflective PPG sensors constructed with NQAPD can be applied to various wearable devices requiring low power consumption, high performance, and cost-effectiveness.

A Study on the Resolution and Depth of Focus of ArF Immersion Photolithography.

In this study, the resolution and depth of focus (DOF) of the ArF immersion scanner are measured experimentally according to numerical aperture (NA). Based on the experiment, the theoretical trade-off relationship between the resolution and depth of focus can be confirmed and k1 and k2 are extracted to be about 0.288 and 0.745, respectively. Another observation for a problem in small critical dimension realization is the increase in line width roughness (LWR) according to mask open area ratio. To mitigate the trade-off problem and critical dimension variation, the photoresist thickness effect on depth of focus is analyzed. Generally, the photoresist thickness is chosen considering depth of focus, which is decided by NA. In practice, the depth of focus is found to be influenced by the photoresist thickness, which can be caused by the intensity change of the reflected ArF light. This means that photoresist thickness can be optimized under a fixed NA in ArF immersion photolithography technology according to the critical dimension and pattern density of the target layer.