Electronic properties of disclinated flexible membrane beyond the inextensional limit: application to graphene.

A gauge-theory approach to describe Dirac fermions on a disclinated flexible membrane beyond the inextensional limit is formulated. The elastic membrane is considered as an embedding of a 2D surface into R(3). The disclination is incorporated through an SO(2) gauge vortex located at the origin, which results in a metric with a conical singularity. A smoothing of the conical singularity is accounted for by replacing a disclinated rigid plane membrane with a hyperboloid of near-zero curvature pierced at the tip by the SO(2) vortex. The embedding parameters are chosen to match the solution to the von Karman equations. A homogeneous part of that solution is shown to stabilize the theory. The modification of the Landau states and density of electronic states of the graphene membrane due to elasticity is discussed.

Ising t-J model close to half filling: a Monte Carlo study.

Within the recently proposed doped-carrier representation of the projected lattice electron operators we derive a full Ising version of the t-J model. This model possesses the global discrete Z(2) symmetry as a maximal spin symmetry of the Hamiltonian at any values of the coupling constants, t and J. In contrast, in the spin anisotropic limit of the t-J model, usually referred to as the t-J(z) model, the global SU(2) invariance is fully restored at J(z) = 0, so that only the spin-spin interaction has in this model the true Ising form. We discuss a relationship between these two models and the standard isotropic t-J model. We show that the low-energy quasiparticles in all three models share qualitatively similar properties at low doping and small values of J/t. The main advantage of the proposed Ising t-J model over the t-J(z) one is that the former allows for the unbiased Monte Carlo calculations on large clusters of up to 10(3) sites. Within this model we discuss in detail the destruction of the antiferromagnetic (AF) order by doping as well as the interplay between the AF order and hole mobility. We also discuss the effect of the exchange interaction and that of the next-nearest-neighbour hoppings on the destruction of the AF order at finite doping. We show that the short-range AF order is observed in a wide range of temperatures and dopings, much beyond the boundaries of the AF phase. We explicitly demonstrate that the local no-double-occupancy constraint plays the dominant role in destroying the magnetic order at finite doping. Finally, a role of inhomogeneities is discussed.