Synthetic Rashba spin-orbit system using a silicon metal-oxide semiconductor.

The spin-orbit interaction (SOI), mainly manifesting itself in heavy elements and compound materials, has been attracting much attention as a means of manipulating and/or converting a spin degree of freedom. Here, we show that a Si metal-oxide- semiconductor (MOS) heterostructure possesses Rashba-type SOI, although Si is a light element and has lattice inversion symmetry resulting in inherently negligible SOI in bulk form. When a strong gate electric field is applied to the Si MOS, we observe spin lifetime anisotropy of propagating spins in the Si through the formation of an emergent effective magnetic field due to the SOI. Furthermore, the Rashba parameter α in the system increases linearly up to 9.8 × 10-16 eV m for a gate electric field of 0.5 V nm-1; that is, it is gate tuneable and the spin splitting of 0.6 µeV is relatively large. Our finding establishes a family of spin-orbit systems.

Indium tin oxide nanoparticles with compositionally tunable surface plasmon resonance frequencies in the near-IR region.

Here we report the synthesis of conducting indium tin oxide (ITO) nanoparticles (NPs) and their surface plasmon resonance (SPR) properties. The SPR peaks of the ITO NPs can be easily tuned by changing the concentration of Sn doping from 3 to 30 mol %. The shortest SPR wavelength of 1618 nm in 10% Sn-doped ITO NPs may reflect the highest electron carrier density in the ITO NPs. The controllable SPR frequencies of metal oxides may offer a novel approach for noble-metal-free SPR applications. Unlike noble-metal nanostructures, ITO has no inter- and intraband transitions in the vis-near-IR region and represents a free-electron conduction, allowing us to systematically study the origin of optical effects arising from the SPRs of conduction electrons.