RESUMEN
Porous alumina has attracted a great deal of attention as a template material for the growth of nanowires and nanodots. Typically, the pores have a high aspect ratio, which forbid the use of evaporation techniques for filling them, due to a pore closure effect. For this reason electrochemical methods are mainly used. However, there are materials, such as Al, which are very difficult to deposit electrochemically. In this work, the fabrication of Al nanorods by electron gun evaporation into low aspect-ratio pores of ultra-thin porous alumina templates is described. The thicknesses of the templates are in the range from 50 to 70 nm, while their pores have diameters from 20 to 40 nm, i.e. their diameter:height aspect ratios are very low, from 1:1.5 to 1:3. These properties make it possible to completely fill the pores with evaporation techniques. This method can be generalized to any target and substrate material.
RESUMEN
The formation of thin alumina films on a silicon substrate by anodization in a mild acid, specifically in 1% wt citric acid aqueous solution, is investigated by transmission electron microscopy (TEM). We present a comparative study between two cases of starting material: pure aluminum and an alloy of aluminum with 1% silicon. In both cases the thickness of the Al layer was less than 50 nm. It was observed that under exactly the same conditions, in the first case the anodization was stopping before anodizing the whole film and a remaining non-anodized Al layer was always present, while in the second case, the Al layer was fully anodized, resulting in an alumina matrix with a very high density of silicon nanocrystals of uniform sizes embedded in it. In both cases the alumina film was compact and amorphous.
