RESUMEN
NiV2O6 thin films were grown on glass slides with varying thicknesses using nebulizer spray pyrolysis. The impact of thickness on the thin films' optical, structural, morphological, and electrical characteristics was systematically investigated. X-ray diffraction and micro-Raman analysis confirmed the formation of the triclinic NiV2O6 system. Surface morphology and roughness variations in the as-deposited NiV2O6 films were studied using scanning electron microscopy (SEM) and a profilometer. Optical properties, including optical band gap (Eg), extinction coefficient (k), absorption coefficient (α), and refractive index (n), were determined through optical reflectance and transmittance measurements. The optical energy gap of the as-deposited NiV2O6 films decreased from 2.02 eV to 1.58 eV with increased layer thickness. Furthermore, the photo-detectivity of the films demonstrated an enhancement corresponding to the prolonged spray time. The sensitivity values obtained for visible irradiation were 328, 511, and 433 for samples S1, S2, and S3, respectively. The obtained results can be imputed to the specific porous microstructure.
RESUMEN
Tungsten disulfide nanosheets were successfully prepared by one-step chemical vapor deposition using tungsten oxide and thiourea in an inert gas environment. The size of the obtained nanosheets was subsequently reduced down to below 20 nm in width and 150 nm in length using high-energy ball milling, followed by 0.5 and 1 wt% graphene loading. The corresponding vibrational and structural characterizations are consistent with the fabrication of a pure WS2 structure for neat sampling and the presence of the graphene characteristic vibration modes in graphene@WS2 compounds. Additional morphological and crystal structures were examined and confirmed by high-resolution electron microscopy. Subsequently, the investigations of the optical properties evidenced the high optical absorption (98%) and lower band gap (1.75 eV) for the graphene@WS2 compared to the other samples, with good band-edge alignment to water-splitting reaction. In addition, the photoelectrochemical measurements revealed that the graphene@WS2 (1 wt%) exhibits an excellent photocurrent density (95 µA/cm2 at 1.23 V bias) compared with RHE and higher applied bias potential efficiency under standard simulated solar illumination AM1.5G. Precisely, graphene@WS2 (1 wt%) exhibits 3.3 times higher performance compared to pristine WS2 and higher charge transfer ability, as measured by electrical impedance spectroscopy, suggesting its potential use as an efficient photoanode for hydrogen evolution reaction.
RESUMEN
Layered transition metals dichalcogenides such as MoS2 and WS2 have shown a tunable bandgap, making them highly desirable for optoelectronic applications. Here, we report on one-step chemical vapor deposited MoS2, WS2 and MoxW1-xS2 heterostructures incorporated into photoconductive devices to be examined and compared in view of their use as potential photodetectors. Vertically aligned MoS2 nanosheets and horizontally stacked WS2 layers, and their heterostructure form MoxW1-xS2, exhibit direct and indirect bandgap, respectively. To analyze these structures, various characterization methods were used to elucidate their properties including Raman spectroscopy, X-ray diffraction, X-ray photoelectron spectrometry and high-resolution transmission electron microscopy. While all the investigated samples show a photoresponse in a broad wavelength range between 400 nm and 700 nm, the vertical MoS2 nanosheets sample exhibits the highest performances at a low bias voltage of 5 V. Our findings demonstrate a responsivity and a specific detectivity of 47.4 mA W-1 and 1.4 × 1011 Jones, respectively, achieved by MoxW1-xS2. This study offers insights into the use of a facile elaboration technique for tuning the performance of MoxW1-xS2 heterostructure-based photodetectors.
RESUMEN
In the surge of recent successes of 2D materials following the rise of graphene, molybdenum disulfide (2D-MoS2) has been attracting growing attention from both fundamental and applications viewpoints, owing to the combination of its unique nanoscale properties. For instance, the bandgap of 2D-MoS2, which changes from direct (in the bulk form) to indirect for ultrathin films (few layers), offers new prospects for various applications in optoelectronics. In this review, we present the latest scientific advances in the field of synthesis and characterization of 2D-MoS2 films while highlighting some of their applications in energy harvesting, gas sensing, and plasmonic devices. A survey of the physical and chemical processing routes of 2D-MoS2 is presented first, followed by a detailed description and listing of the most relevant characterization techniques used to study the MoS2 nanomaterial as well as theoretical simulations of its interesting optical properties. Finally, the challenges related to the synthesis of high quality and fairly controllable MoS2 thin films are discussed along with their integration into novel functional devices.