Compact magneto-optical isolator by µ-transfer printing of magneto-optical single-crystal film on silicon waveguides.

Optical isolators provide one-way propagation and are necessary to protect laser diodes from damage and unstable operation caused by reflected light. Although magneto-optical (MO) devices can operate as isolators, achieving high-density integration using conventional direct bonding methods is difficult because a large and thick growth substrate remains on the circuits. We experimentally demonstrated a compact Mach-Zehnder interferometer-based MO isolator with Si waveguides by the µ-transfer printing of a Ce:YIG/SGGG coupon. The isolator has a footprint of 0.25 mm2 with a Ce:YIG/SGGG coupon of 50 × 800 µm2 and ∼ 1-µm thickness and achieved a maximum isolation ratio of 14 dB in telecom bands.

Spatially resolved multimode excitation for smooth supercontinuum generation in a SiN waveguide.

We propose a method of supercontinuum light generation enhanced by multimode excitation in a precisely dispersion-engineered deuterated SiN (SiN:D) waveguide. Although a regularly designed SiN-based nonlinear optical waveguide exhibits anomalous dispersion with the fundamental and first-order multimode operation, the center-symmetric light pumping at the input edge has so far inhibited the full potential of the nonlinearity of SiN-based materials. On the basis of numerical analysis and simulation for the SiN:D waveguide, we intentionally applied spatial position offsets to excite the fundamental and higher-order modes to realize bandwidth broadening with flatness. Using this method, we achieved an SNR improvement of up to 18 dB at a wavelength of 0.6 µm with an offset of about 1 µm in the Y-axis direction and found that the contribution was related to the presence of dispersive waves due to the excitation of TE10, and TE01 modes.

Direct f-3f self-referencing using an integrated silicon-nitride waveguide.

We have achieved the simultaneous generation of a 2.6-octave-wide supercontinuum (SC) spectrum over 400-2500 nm and third-harmonic light solely by a dispersion-controlled silicon-nitride waveguide (SiNW). To increase the visible intensity of the SC light component, we fabricated low-loss 5-mm-long deuterated SiNWs with spot-size converters by low-temperature deposition. We succeeded in measuring the carrier-envelope-offset (CEO) signal with a 34-dB signal-to-noise ratio because this short deuterated SiNW provides a large temporal overlap between the f and 3f components. In addition, we have demonstrated this method of CEO locking at telecommunications wavelengths with f-3f self-referencing generated solely by the SiNW without the use of highly nonlinear fiber and an additional nonlinear crystal. Compared with the method of CEO locking with a highly nonlinear fiber and a standard f-2f self-referencing interferometer, this method is not only simple and compact but also stable.

Inter-layer light transition in hybrid III-V/Si waveguides integrated by µ-transfer printing.

We demonstrate low-loss and broadband light transition from III-V functional layers to a Si platform via two-stage adiabatic-crossing coupler waveguides. A 900-µm-long and 2.7-µm-thick III-V film waveguide consisting of a GaInAsP core and InP cladding layers is transferred onto an air-cladding Si photonic chip by the µ-transfer printing (µ-TP) method. An average optical coupling loss per joint of 1.26 dB is obtained in C + L telecommunication bands (1530-1635 nm). The correlation between alignment offset and measured optical coupling loss is discussed with the frequency distribution of µ-TP samples. We also performed a photoluminescence measurement to investigate the material properties in the GaInAsP layer to see if they are distorted by the strong bending stress produced during the pick-up and print steps of the µ-TP process. The peak intensity reduction of 80-90% and a wavelength shift of 0-5 nm (blue shift) were observed after the process. The series of fundamental studies presented here, which combine multiple analyses, contribute to improving our understanding of III-V/Si photonic integration by µ-TP.

Evaluation of graphene optical nonlinearity with photon-pair generation in graphene-on-silicon waveguides.

We evaluate the nonlinear coefficient of graphene-on-silicon waveguides through the coincidence measurement of photon-pairs generated via spontaneous four-wave mixing. We observed the temporal correlation of the photon-pairs from the waveguides over various transfer layouts of graphene sheets. A simple analysis of the experimental results using coupled-wave equations revealed that the atomically-thin graphene sheets enhanced the nonlinearity of silicon waveguides up to ten-fold. The results indicate that the purely χ (3)-based effective nonlinear refractive index of graphene is on the order of 10-13 m 2/W, and provide important insights for applications of graphene-based nonlinear optics in on-chip nanophotonics.

Dopamine detection on activated reaction field consisting of graphene-integrated silicon photonic cavity.

Graphene is widely recognized as an outstanding and multi-functional material in various application fields such as electronics, photonics, mechanics, and life sciences. We propose a neurotransmitter sensor with ultra-small volume for detecting the photonic light-matter response. Such detection can be achieved using surface-activated monolayer graphene sheets and CMOS-compatible silicon-photonic circuits. Patterned pieces of CVD-grown graphene are integrated on the top of a silicon micro-ring resonator, which induce the adsorption of catecholamine molecules originated from the π-stacking effect. We used dopamine to demonstrate such detection and examine the sensitivity of graphene-dopamine coupling. To avoid high optical insertion loss and degradation of resonance characteristics caused by a graphene's extremely high optical absorption coefficient in the near infrared region, a ring resonator with adjusted coupling design is used to compensate for the drawbacks. Owing to the advanced nano-sensing platform and measurement system, an activated graphene-sensing surface of only ∼30 µm2/ch enables π coupling to dopamine with enough sensitivity to detect less than 10-µM solution concentration. The detection mechanism through the surface reaction is also verified by optical simulation and atomic force microscopy measurement, revealing that the flowing dopamine molecules can only occupy the outermost surface of graphene. We expect this sensor to contribute to the development of an innovative label-free and disposable bio-sensing platform with accurate, sensitive, and fast response.

Quantum-critical conductivity of the Dirac fluid in graphene.

Graphene near charge neutrality is expected to behave like a quantum-critical, relativistic plasma-the "Dirac fluid"-in which massless electrons and holes collide at a rapid rate. We used on-chip terahertz spectroscopy to measure the frequency-dependent optical conductivity of clean, micrometer-scale graphene at electron temperatures between 77 and 300 kelvin. At charge neutrality, we observed the quantum-critical scattering rate characteristic of the Dirac fluid. At higher doping, we detected two distinct current-carrying modes with zero and nonzero total momenta, a manifestation of relativistic hydrodynamics. Our work reveals the quantum criticality and unusual dynamic excitations near charge neutrality in graphene.

Mid-IR broadband supercontinuum generation from a suspended silicon waveguide.

Mid-infrared light provides numerous unexpected opportunities in scientific discoveries because this wavelength region covers the fingerprints of various molecular vibrational resonances. However, the light generation efficiency and bandwidth have been a long-standing bottleneck which has limited the development so far. Moreover, the light source that can be integrated with other components such as wavelength filters, detectors, and electronics, will be the key factor toward the future practical applications. Here, we propose an all-air-cladding silicon-rib waveguide to experimentally reveal the nonlinear performance of supercontinuum generation. By tuning the waveguide dispersion parameters with simulation, a continuous broad spectrum of 1.32 octave (2-5 µm) was observed with a pump pulse wavelength of 4 µm. To further investigate our device characteristics, multiple conditions were set by varying the interaction length, pump power, and waveguide dimension, which revealed the nonlinear phenomenon in the waveguide.

Optical nonlinearity enhancement with graphene-decorated silicon waveguides.

Broadband on-chip optical frequency combs (OFCs) are important for expanding the functionality of photonic integrated circuits. Here, we demonstrate a huge local optical nonlinearity enhancement using graphene. A waveguide is decorated with graphene by precisely manipulating graphene's area and position. Our approach simultaneously achieves both an extremely efficient supercontinuum and ultra-short pulse generation. With our graphene-decorated silicon waveguide (G-SWG), we have achieved enhanced spectral broadening of femtosecond pump pulses, along with an eightfold increase in the output optical intensity at a wavelength approximately 200 nm shorter than that of the pump pulses. We also found that this huge nonlinearity works as a compressor that effectively compresses pulse width from 80 to 15.7 fs. Our results clearly show the potential for our G-SWG to greatly boost the speed and capacity of future communications with lower power consumption, and our method will further decrease the required pump laser power because it can be applied to decorate various kinds of waveguides with various two-dimensional materials.

High-performance silicon photonics technology for telecommunications applications.

By way of a brief review of Si photonics technology, we show that significant improvements in device performance are necessary for practical telecommunications applications. In order to improve device performance in Si photonics, we have developed a Si-Ge-silica monolithic integration platform, on which compact Si-Ge-based modulators/detectors and silica-based high-performance wavelength filters are monolithically integrated. The platform features low-temperature silica film deposition, which cannot damage Si-Ge-based active devices. Using this platform, we have developed various integrated photonic devices for broadband telecommunications applications.

Single silicon wire waveguide based delay line interferometer for DPSK demodulation.

We experimentally demonstrate a high-quality phase shift keying demodulator based on a silicon photonic wire waveguide. Since the birefringence of the waveguide generates extremely huge differential group delay, an ultra-compact and high-extinction-ratio delay line interferometer is devised in TE and TM modes. We firstly calculated and simulated the requirements for propagation length and waveguide's dimensions. Then, we measured the interference spectrum, eye pattern, bit error rate, and temperature dependence to ascertain its feasibility for DPSK demodulation. For a 2.8 cm-long wire waveguide, a free spectral range of 9.6 GHz and an error-free DPSK demodulation around 10 Gb/s are obtained.

Monolithic integration of a silica AWG and Ge photodiodes on Si photonic platform for one-chip WDM receiver.

On the silicon (Si) photonic platform, we monolithically integrated a silica-based arrayed-waveguide grating (AWG) and germanium (Ge) photodiodes (PDs) using low-temperature fabrication technology. We confirmed demultiplexing by the AWG, optical-electrical signal conversion by Ge PDs, and high-speed signal detection at all channels. In addition, we mounted a multichannel transimpedance amplifier/limiting amplifier (TIA/LA) circuit on the fabricated AWG-PD device using flip-chip bonding technology. The results show the promising potential of our Si photonic platform as a photonics-electronics convergence.

High-gain, wide-dynamic-range parametric interaction in Mg-doped LiNbO3 quasi-phase-matched adhered ridge waveguide.

With recent developments and optimizations for quasi-phase-matched adhered ridge waveguide (QPM-ARW), outstanding performances containing efficient amplification were demonstrated by difference frequency generation (DFG) and optical parametric amplification (OPA). A maximum channel conversion efficiency of +7.6 dB (570%) was achieved in a telecommunication band using a 50 mm-long device, when coupling with 160 mW pump. Simultaneously, the input signal was amplified up to +9.5 dB (890%).

Influence of carrier lifetime on performance of silicon p-i-n variable optical attenuators fabricated on submicrometer rib waveguides.

We investigated influence of carrier lifetime on performance of silicon (Si) p-i-n variable optical attenuators (VOAs) on submicrometer Si rib waveguides. VOAs were fabricated with and without intentional implantation of lattice defects into their intrinsic region. Carrier lifetime was measured by pulse responses for normal incidence of picosecond laser pulse of 775 nm to the VOA, as approximately 1 ns and approximately 7 ns for the VOAs with and without defects, respectively. Carrier lifetime is determined by the sum of surface recombination and Auger recombination for VOAs without defects, while Schockley-Read-Hall recombination is dominant for the VOA with defects. As a result, attenuation efficiency (dB/mA) is 0.2-0.7 and 0.04-0.1, while 3-dB bandwidth is 40-100 MHz and over 200 MHz for the VOAs with and without defects, respectively. There is a trade-off relation between attenuation and response speed of the VOAs with respect to carrier lifetime i.e., attenuation efficiency is linearly proportional to the carrier lifetime, whereas response speed is inversely proportional to it.