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The ability to control and tune magnetic dissipation is a key concept of emergent spintronic technologies. Magnon scattering processes constitute a major dissipation channel in nanomagnets, redefine their response to spin torque, and hold the promise for manipulating magnetic states on the quantum level. Controlling these processes in nanomagnets, while being imperative for spintronic applications, has remained difficult to achieve. Here, we propose an approach for controlling magnon scattering by a switch that generates nonuniform magnetic field at nanoscale. We provide an experimental demonstration in magnetic tunnel junction nanodevices, consisting of a free layer and a synthetic antiferromagnet. By triggering the spin-flop transition in the synthetic antiferromagnet and utilizing its stray field, magnon interaction in the free layer is toggled. The results open up avenues for tuning nonlinearities in magnetic neuromorphic applications and for engineering coherent magnon coupling in hybrid quantum information technologies.
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The momentum and spin of charge carriers in the topological insulators are constrained to be perpendicular to each other due to the strong spin-orbit coupling. We have investigated this unique spin-momentum locking property in Sb2Te3 topological insulator nanowires by injecting spin-polarized electrons through magnetic tunnel junction electrodes. Non-local voltage measurements exhibit an asymmetry with respect to the magnetic field applied perpendicular to the nanowire channel, which is remarkably different from that of a non-local measurement in a channel that lacks spin-momentum locking. In stark contrast to conventional non-local spin valves, simultaneous reversal of magnetic moments of all magnetic contacts to the Sb2Te3 nanowire alters the non-local voltage. This unusual asymmetry is a clear signature of the spin-momentum locking in the Sb2Te3 nanowire surface states.
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Spin transfer torque magnetic random access memory (STT-MRAM) is a promising candidate for next generation memory as it is non-volatile, fast, and has unlimited endurance. Another important aspect of STT-MRAM is that its core component, the nanoscale magnetic tunneling junction (MTJ), is thought to be radiation hard, making it attractive for space and nuclear technology applications. However, studies on the effects of ionizing radiation on the STT-MRAM writing process are lacking for MTJs with perpendicular magnetic anisotropy (pMTJs) required for scalable applications. Particularly, the question of the impact of extreme total ionizing dose on perpendicular magnetic anisotropy, which plays a crucial role on thermal stability and critical writing current, remains open. Here we report measurements of the impact of high doses of gamma and neutron radiation on nanoscale pMTJs used in STT-MRAM. We characterize the tunneling magnetoresistance, the magnetic field switching, and the current-induced switching before and after irradiation. Our results demonstrate that all these key properties of nanoscale MTJs relevant to STT-MRAM applications are robust against ionizing radiation. Additionally, we perform experiments on thermally driven stochastic switching in the gamma ray environment. These results indicate that nanoscale MTJs are promising building blocks for radiation-hard non-von Neumann computing.
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Energy-efficient switching of magnetization is a central problem in nonvolatile magnetic storage and magnetic neuromorphic computing. In the past two decades, several efficient methods of magnetic switching were demonstrated including spin torque, magneto-electric, and microwave-assisted switching mechanisms. Here we experimentally show that low-dimensional magnetic chaos induced by alternating spin torque can strongly increase the rate of thermally-activated magnetic switching in a nanoscale ferromagnet. This mechanism exhibits a well-pronounced threshold character in spin torque amplitude and its efficiency increases with decreasing spin torque frequency. We present analytical and numerical calculations that quantitatively explain these experimental findings and reveal the key role played by low-dimensional magnetic chaos near saddle equilibria in enhancement of the switching rate. Our work unveils an important interplay between chaos and stochasticity in the energy assisted switching of magnetic nanosystems and paves the way towards improved energy efficiency of spin torque memory and logic.
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Spin-orbit torques (SOTs) in multilayers of ferromagnetic (FM) and non-magnetic (NM) metals can manipulate the magnetization of the FM layer efficiently. This is employed, for example, in non-volatile magnetic memories for energy-efficient mobile electronics1,2 and spin torque nano-oscillators3-7 for neuromorphic computing8. Recently, spin torque nano-oscillators also found use in microwave-assisted magnetic recording, which enables ultrahigh-capacity hard disk drives9. Most SOT devices employ spin Hall10,11 and Rashba12 effects, which originate from spin-orbit coupling within the NM layer and at the FM/NM interfaces, respectively. Recently, SOTs generated by the anomalous Hall effect in FM/NM/FM multilayers were predicted13 and experimentally realized14. The control of SOTs through crystal symmetry was demonstrated as well15. Understanding all the types of SOTs that can arise in magnetic multilayers is needed for a formulation of a comprehensive SOT theory and for engineering practical SOT devices. Here we show that a spin-polarized electric current known to give rise to anisotropic magnetoresistance (AMR) and the planar Hall effect (PHE) in a FM16 can additionally generate large antidamping SOTs with an unusual angular symmetry in NM1/FM/NM2 multilayers. This effect can be described by a recently proposed magnonic mechanism17. Our measurements reveal that this torque can be large in multilayers in which both spin Hall and Rashba torques are negligible. Furthermore, we demonstrate the operation of a spin torque nano-oscillator driven by this SOT. These findings significantly expand the class of materials that exhibit giant SOTs.
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This article reviews static and dynamic interfacial effects in magnetism, focusing on interfacially-driven magnetic effects and phenomena associated with spin-orbit coupling and intrinsic symmetry breaking at interfaces. It provides a historical background and literature survey, but focuses on recent progress, identifying the most exciting new scientific results and pointing to promising future research directions. It starts with an introduction and overview of how basic magnetic properties are affected by interfaces, then turns to a discussion of charge and spin transport through and near interfaces and how these can be used to control the properties of the magnetic layer. Important concepts include spin accumulation, spin currents, spin transfer torque, and spin pumping. An overview is provided to the current state of knowledge and existing review literature on interfacial effects such as exchange bias, exchange spring magnets, spin Hall effect, oxide heterostructures, and topological insulators. The article highlights recent discoveries of interface-induced magnetism and non-collinear spin textures, non-linear dynamics including spin torque transfer and magnetization reversal induced by interfaces, and interfacial effects in ultrafast magnetization processes.
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Manipulation of magnetization by electric field is a central goal of spintronics because it enables energy-efficient operation of spin-based devices. Spin wave devices are promising candidates for low-power information processing, but a method for energy-efficient excitation of short-wavelength spin waves has been lacking. Here we show that spin waves in nanoscale magnetic tunnel junctions can be generated via parametric resonance induced by electric field. Parametric excitation of magnetization is a versatile method of short-wavelength spin wave generation, and thus, our results pave the way toward energy-efficient nanomagnonic devices.
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Microwave detectors based on the spin-torque diode effect are among the key emerging spintronic devices. By utilizing the spin of electrons in addition to charge, they have the potential to overcome the theoretical performance limits of their semiconductor (Schottky) counterparts. However, so far, practical implementations of spin-diode microwave detectors have been limited by the necessity to apply a magnetic field. Here, we demonstrate nanoscale magnetic tunnel junction microwave detectors, exhibiting high-detection sensitivity of 75,400 mV mW(-1) at room temperature without any external bias fields, and for low-input power (micro-Watts or lower). This sensitivity is significantly larger than both state-of-the-art Schottky diode detectors and existing spintronic diodes. Micromagnetic simulations and measurements reveal the essential role of injection locking to achieve this sensitivity performance. This mechanism may provide a pathway to enable further performance improvement of spin-torque diode microwave detectors.
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Spin torque oscillators (STOs) are compact, tunable sources of microwave radiation that serve as a test bed for studies of nonlinear magnetization dynamics at the nanometer length scale. The spin torque in an STO can be created by spin-orbit interaction, but low spectral purity of the microwave signals generated by spin orbit torque oscillators hinders practical applications of these magnetic nanodevices. Here we demonstrate a method for decreasing the phase noise of spin orbit torque oscillators based on Pt/Ni80Fe20 nanowires. We experimentally demonstrate that tapering of the nanowire, which serves as the STO active region, significantly decreases the spectral linewidth of the generated signal. We explain the observed linewidth narrowing in the framework of the Ginzburg-Landau auto-oscillator model. The model reveals that spatial non-uniformity of the spin current density in the tapered nanowire geometry hinders the excitation of higher order spin-wave modes, thus stabilizing the single-mode generation regime. This non-uniformity also generates a restoring force acting on the excited self-oscillatory mode, which reduces thermal fluctuations of the mode spatial position along the wire. Both these effects improve the STO spectral purity.
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Spin torque from spin current applied to a nanoscale region of a ferromagnet can act as negative magnetic damping and thereby excite self-oscillations of its magnetization. In contrast, spin torque uniformly applied to the magnetization of an extended ferromagnetic film does not generate self-oscillatory magnetic dynamics but leads to reduction of the saturation magnetization. Here we report studies of the effect of spin torque on a system of intermediate dimensionality--a ferromagnetic nanowire. We observe coherent self-oscillations of magnetization in a ferromagnetic nanowire serving as the active region of a spin torque oscillator driven by spin orbit torques. Our work demonstrates that magnetization self-oscillations can be excited in a one-dimensional magnetic system and that dimensions of the active region of spin torque oscillators can be extended beyond the nanometre length scale.
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Stochastic dynamics of spin torque oscillators can be described in terms of magnetization drift and diffusion over a current-dependent effective energy surface given by the Fokker-Planck equation. Here we present a method that directly probes this effective energy surface via time-resolved measurements of the microwave voltage generated by a spin torque oscillator. We show that the effective energy approach provides a simple recipe for predicting spectral linewidths and line shapes near the generation threshold. Our time domain technique also accurately measures the fieldlike component of spin torque in a wide range of the voltage bias values.
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The spin-transfer nano-oscillator (STNO) offers the possibility of using the transfer of spin angular momentum via spin-polarized currents to generate microwave signals. However, at present STNO microwave emission mainly relies on both large drive currents and external magnetic fields. These issues hinder the implementation of STNOs for practical applications in terms of power dissipation and size. Here, we report microwave measurements on STNOs built with MgO-based magnetic tunnel junctions having a planar polarizer and a perpendicular free layer, where microwave emission with large output power, excited at ultralow current densities, and in the absence of any bias magnetic fields is observed. The measured critical current density is over one order of magnitude smaller than previously reported. These results suggest the possibility of improved integration of STNOs with complementary metal-oxide-semiconductor technology, and could represent a new route for the development of the next-generation of on-chip oscillators.
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We demonstrate excitation of ferromagnetic resonance in CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs) by the combined action of voltage-controlled magnetic anisotropy (VCMA) and spin transfer torque (ST). Our measurements reveal that GHz-frequency VCMA torque and ST in low-resistance MTJs have similar magnitudes, and thus that both torques are equally important for understanding high-frequency voltage-driven magnetization dynamics in MTJs. As an example, we show that VCMA can increase the sensitivity of an MTJ-based microwave signal detector to the sensitivity level of semiconductor Schottky diodes.
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The excitation of the steady-state precessions of magnetization opens a new way for nanoscale microwave oscillators by exploiting the transfer of spin angular momentum from a spin-polarized current to a ferromagnet, referred to as spin-transfer nano-oscillators (STNOs). For STNOs to be practical, however, their relatively low output power and their relatively large line width must be improved. Here we demonstrate that microwave signals with maximum measured power of 0.28 µW and simultaneously narrow line width of 25 MHz can be generated from CoFeB-MgO-based magnetic tunnel junctions having an in-plane magnetized reference layer and a free layer with strong perpendicular anisotropy. Moreover, the generation efficiency is substantially higher than previously reported STNOs. The results will be of importance for the design of nanoscale alternatives to traditional silicon oscillators used in radio frequency integrated circuits.
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We report microwave-frequency magnetization dynamics coexcited by alternating spin torque and thermal fluctuations. In these dynamics, temperature strongly enhances the amplitude of magnetization precession and enables excitation of nonlinear dynamic states of magnetization by weak alternating spin torque. We explain these thermally-activated dynamics in terms of nonadiabatic stochastic resonance of magnetization driven by spin torque.
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The superconducting transition temperature T(c) of a ferromagnet (F)-superconductor (S)-ferromagnet trilayer depends on the mutual orientation of the magnetic moments of the F layers. This effect has been previously observed in F/S/F systems as a T(c) difference between parallel and antiparallel configurations of the F layers. Here we report measurements of T(c) in CuNi/Nb/CuNi trilayers as a function of the angle between the magnetic moments of the CuNi ferromagnets. The observed angular dependence of T(c) is in qualitative agreement with a F/S proximity theory that accounts for the odd triplet component of the condensate predicted to arise for noncollinear orientation of the magnetic moments of the F layers.
