RESUMEN
We report that vanadium dioxide films patterned with λ/100000 nanogaps exhibit an anomalous transition behavior at millimeter wavelengths. Most of the hybrid structure's switching actions occur well below the insulator to metal transition temperature, starting from 25 °C, so that the hysteresis curves completely separate themselves from their bare film counterparts. It is found that thermally excited intrinsic carriers are responsible for this behavior by introducing enough loss in the context of the radically modified electromagnetic environment in the vicinity of the nanogaps. This phenomenon newly extends the versatility of insulator to metal transition devices to encompass their semiconductor properties.
RESUMEN
We demonstrate an active metamaterial device that allows to electrically control terahertz transmission over more than one order of magnitude. Our device consists of a lithographically defined gold nano antenna array fabricated on a thin film of vanadium dioxide (VO(2)), a material that possesses an insulator to metal transition. The nano antennas let terahertz (THz) radiation funnel through when the VO(2) film is in the insulating state. By applying a dc-bias voltage through our device, the VO(2) becomes metallic. This electrically shorts the antennas and therefore switches off the transmission in two distinct regimes: reversible and irreversible switching.
