RESUMEN
Doping of nitrogen is a promising approach to improve the electrical conductivity of 3C-SiC and allow its application in various fields. N-doped, <110>-oriented 3C-SiC bulks with different doping concentrations were prepared via halide laser chemical vapour deposition (HLCVD) using tetrachlorosilane (SiCl4) and methane (CH4) as precursors, along with nitrogen (N2) as a dopant. We investigated the effect of the volume fraction of nitrogen (ÏN2) on the preferred orientation, microstructure, electrical conductivity (σ), deposition rate (Rdep), and optical transmittance. The preference of 3C-SiC for the <110> orientation increased with increasing ÏN2. The σ value of the N-doped 3C-SiC bulk substrates first increased and then decreased with increasing ÏN2, reaching a maximum value of 7.4 × 102 S/m at ÏN2 = 20%. Rdep showed its highest value (3000 µm/h) for the undoped sample and decreased with increasing ÏN2, reaching 1437 µm/h at ÏN2 = 30%. The transmittance of the N-doped 3C-SiC bulks decreased with ÏN2 and showed a declining trend at wavelengths longer than 1000 nm. Compared with the previously prepared <111>-oriented N-doped 3C-SiC, the high-speed preparation of <110>-oriented N-doped 3C-SiC bulks further broadens its application field.
