Colloidal Atomic Layer Deposition on Nanocrystals Using Ligand-Modified Precursors.

Atomic layer deposition (ALD) is a method to grow thin metal oxide layers on a variety of materials for applications spanning from electronics to catalysis. Extending ALD to colloidally stable nanocrystals promises to combine the benefits of thin metal oxide coatings with the solution processability of the nanocrystals. However, challenges persist in applying this method, which relate to finding precursors that promote the growth of the metal oxide while preserving colloidal stability throughout the process. Herein, we introduce a colloidal ALD method to coat nanocrystals with amorphous metal oxide shells using metal and oxygen precursors that act as colloidal stabilizing ligands. Our scheme involves metal-amide precursors modified with solubilizing groups and oleic acid as the oxygen source. The growth of the oxide is self-limiting and proceeds in a layer-by-layer fashion. Our protocol is generalizable and intrinsically scalable. Potential applications in display, light detection, and catalysis are envisioned.

Short-Wave Infrared Colloidal QD Photodetector with Nanosecond Response Times Enabled by Ultrathin Absorber Layers.

Ultrafast short-wavelength infrared (SWIR) photodetection is of great interest for emerging automated vision and spatial mapping technologies. Colloidal quantum dots (QDs) stand out for SWIR photodetection compared to epitaxial (In,Ga)As or (Hg,Cd)Te semiconductors by their combining a size-tunable bandgap and a suitability for cost-effective, solution-based processing. However, achieving ultrafast, nanosecond-level response time has remained an outstanding challenge for QD-based SWIR photodiodes (QDPDs). Here, record 4 ns response time in PbS-based QDPDs that operate at SWIR wavelengths is reported, a result reaching the requirement of SWIR light detection and ranging based on colloidal QDs. These ultrafast QDPDs combine a thin active layer to reduce the carrier transport time and a small area to inhibit slow capacitive discharging. By implementing a concentration gradient ligand exchange method, high-quality p-n junctions are fabricated in these ultrathin QDPDs. Moreover, these ultrathin QDPDs attain an external quantum efficiency of 42% at 1330 nm, due to a 2.5-fold enhanced light absorption through the formation of a Fabry-Perot cavity within the QDPD and the highly efficient extraction (98%) of photogenerated charge carriers. Based on these results, it is estimated that a further increase of the charge-carrier mobility can lead to PbS QDPDs with sub-nanosecond response time.

Surface Chemistry Dictates the Enhancement of Luminescence and Stability of InP QDs upon c-ALD ZnO Hybrid Shell Growth.

Indium phosphide quantum dots (InP QDs) are a promising example of Restriction of Hazardous Substances directive (RoHS)-compliant light-emitting materials. However, they suffer from low quantum yield and instability upon processing under ambient conditions. Colloidal atomic layer deposition (c-ALD) has been recently proposed as a methodology to grow hybrid materials including QDs and organic/inorganic oxide shells, which possess new functions compared to those of the as-synthesized QDs. Here, we demonstrate that ZnO shells can be grown on InP QDs obtained via two synthetic routes, which are the classical sylilphosphine-based route and the more recently developed aminophosphine-based one. We find that the ZnO shell increases the photoluminescence emission only in the case of aminophosphine-based InP QDs. We rationalize this result with the different chemistry involved in the nucleation step of the shell and the resulting surface defect passivation. Furthermore, we demonstrate that the ZnO shell prevents degradation of the InP QD suspension under ambient conditions by avoiding moisture-induced displacement of the ligands from their surface. Overall, this study proposes c-ALD as a methodology for the synthesis of alternative InP-based core@shell QDs and provides insight into the surface chemistry that results in both enhanced photoluminescence and stability required for application in optoelectronic devices and bioimaging.

Formation of Colloidal In(As,P) Quantum Dots Active in the Short-Wave Infrared, Promoting Growth through Temperature Ramps.

Colloidal InAs quantum dots (QDs) are widely studied as a printable optoelectronic material for short-wave infrared (SWIR) that is not restricted by regulations on hazardous substances. Such applications, however, require synthetic procedures that yield QDs with adjustable sizes at the end of the reaction. Here, we show that such one-size-one-batch protocols can be realized through temperature profiles that involve a rapid transition from a lower injection temperature to a higher reaction temperature. By expediting the transition to the reaction temperature and reducing the overall synthesis concentration, we can tune QD sizes from 4.5 to 10 nm, the latter corresponding to a band gap transition at 1600 nm. We argue that the temperature ramps provide a more distinct separation between nucleation at low temperature and growth at high temperature such that larger QDs are obtained by minimizing the nucleation time. The synthetic procedures introduced here will strongly promote the development of a SWIR optoelectronic technology based on InAs QDs, while the use of temperature profiles to steer a colloidal synthesis can find applications well beyond the specific case of InAs QDs.

Colloidal CdSe/CdS Core/Crown Nanoplatelets for Efficient Blue Light Emission and Optical Amplification.

The application of CdSe nanoplatelets (NPLs) in the ultraviolet/blue region remains an open challenge due to charge trapping typically leading to limited photoluminescence quantum efficiency (PL QE) and sub-bandgap emission in core-only NPLs. Here, we synthesized 3.5 monolayer core/crown CdSe/CdS NPLs with various crown dimensions, exhibiting saturated blue emission and PL QE up to 55%. Compared to core-only NPLs, the PL intensity decays monoexponentially over two decades due to suppressed deep trapping and delayed emission. In both core-only and core/crown NPLs we observe biexciton-mediated optical gain between 470 and 510 nm, with material gain coefficients up to 7900 cm-1 and consistently lower gain thresholds in crowned NPLs. Gain lifetimes are limited to 40 ps, due to residual ultrafast trapping and higher exciton densities at threshold. Our results provide guidelines for rational optimization of thin CdSe NPLs toward lighting and light-amplification applications.

Narrow homogeneous linewidths and slow cooling dynamics across infrared intra-band transitions in n-doped HgSe colloidal quantum dots.

Intra-band transitions in colloidal quantum dots (QDs) are promising for opto-electronic applications in the mid-IR spectral region. However, such intra-band transitions are typically very broad and spectrally overlapping, making the study of individual excited states and their ultrafast dynamics very challenging. Here, we present the first full spectrum two-dimensional continuum infrared (2D CIR) spectroscopy study of intrinsically n-doped HgSe QDs, which exhibit mid-infrared intra-band transitions in their ground state. The obtained 2D CIR spectra reveal that underneath the broad absorption line shape of ∼500 cm-1, the transitions exhibit surprisingly narrow intrinsic linewidths with a homogeneous broadening of 175-250 cm-1. Furthermore, the 2D IR spectra are remarkably invariant, with no sign of spectral diffusion dynamics at waiting times up to 50 ps. Accordingly, we attribute the large static inhomogeneous broadening to the distribution of size and doping level of the QDs. In addition, the two higher-lying P-states of the QDs can be clearly identified in the 2D IR spectra along the diagonal with a cross-peak. However, there is no indication of cross-peak dynamics indicating that, despite the strong spin-orbit coupling in HgSe, transitions between the P-states must be longer than our maximum waiting time of 50 ps. This study illustrates a new frontier of 2D IR spectroscopy enabling the study of intra-band carrier dynamics in nanocrystalline materials across the entire mid-infrared spectrum.

Colloidal III-V Quantum Dot Photodiodes for Short-Wave Infrared Photodetection.

Short-wave infrared (SWIR) image sensors based on colloidal quantum dots (QDs) are characterized by low cost, small pixel pitch, and spectral tunability. Adoption of QD-SWIR imagers is, however, hampered by a reliance on restricted elements such as Pb and Hg. Here, QD photodiodes, the central element of a QD image sensor, made from non-restricted In(As,P) QDs that operate at wavelengths up to 1400 nm are demonstrated. Three different In(As,P) QD batches that are made using a scalable, one-size-one-batch reaction and feature a band-edge absorption at 1140, 1270, and 1400 nm are implemented. These QDs are post-processed to obtain In(As,P) nanocolloids stabilized by short-chain ligands, from which semiconducting films of n-In(As,P) are formed through spincoating. For all three sizes, sandwiching such films between p-NiO as the hole transport layer and Nb:TiO2 as the electron transport layer yields In(As,P) QD photodiodes that exhibit best internal quantum efficiencies at the QD band gap of 46±5% and are sensitive for SWIR light up to 1400 nm.

Acid-Base Mediated Ligand Exchange on Near-Infrared Absorbing, Indium-Based III-V Colloidal Quantum Dots.

Colloidal quantum dots (QDs) made from In-based III-V semiconductors are emerging as a printable infrared material. However, the formulation of infrared inks and the formation of electrically conductive QD coatings is hampered by a limited understanding of the surface chemistry of In-based QDs. In this work, we present a case study on the surface termination of IR active III-V QDs absorbing at 1220 nm that were synthesized by reducing a mixture of indium halides and an aminoarsine by an aminophosphine in oleylamine. We find that this recently established synthesis method yields In(As,P) QDs with minor phosphorus admixing and a surface terminated by a mixture of oleylamine and chloride. Exposing these QDs to protic surface-active compounds RXH, such as fatty acids or alkanethiols, initiates a ligand exchange reaction involving the binding of the conjugate base RX- and the desorption of 1 equiv of alkylammonium chloride. Using density functional theory simulations, we confirm that the formation of the alkylammonium chloride salt can provide the energy needed to drive such acid/base mediated ligand exchange reactions, even for weak organic acids such as alkanethiols. We conclude that the unique surface termination of In(As,P) QDs, consisting of a mixture of L-type and X-type ligands and acid/base mediated ligand exchange, can form a general model for In-based III-V QDs synthesized using indium halides and aminopnictogens.

Near-Edge Ligand Stripping and Robust Radiative Exciton Recombination in CdSe/CdS Core/Crown Nanoplatelets.

We address the relation between surface chemistry and optoelectronic properties in semiconductor nanocrystals using core/crown CdSe/CdS nanoplatelets passivated by cadmium oleate (Cd(Ol)2) as model systems. We show that addition of butylamine to a nanoplatelet (NPL) dispersion maximally displaces ∼40% of the original Cd(Ol)2 capping. On the basis of density functional theory simulations, we argue that this behavior reflects the preferential displacement of Cd(Ol)2 from (near)-edge surface sites. Opposite from CdSe core NPLs, core/crown NPL dispersions can retain 45% of their initial photoluminescence efficiency after ligand displacement, while radiative exciton recombination keeps dominating the luminescent decay. Using electron microscopy observations, we assign this robust photoluminescence to NPLs with a complete CdS crown, which prevents charge carrier trapping in the near-edge surface sites created by ligand displacement. We conclude that Z-type ligands such as cadmium carboxylates can provide full electronic passivation of (100) facets yet are prone to displacement from (near)-edge surface sites.