Angular-Shaped Naphthalene Bis(1,5-diamide-2,6-diylidene)malononitrile for High-Performance, Air-Stable N-Type Organic Field-Effect Transistors.

The synthesis, characterization, and application of two angular-shaped naphthalene bis(1,5-diamide-2,6-diylidene)malononitriles (NBAMs) as high-performance air-stable n-type organic field effect transistor (OFET) materials are reported. NBAM derivatives exhibit deep lowest-unoccupied molecular orbital (LUMO) levels, suitable for air-stable n-type OFETs. The OFET device based on NBAM-EH fabricated by vapor deposition exhibits a maximum electron mobility of 0.63 cm2 V-1 s-1 in air with an on/off current ratio ( Ion/ Ioff) of 105.

Di-2-(2-oxindolin-3-ylidene)malononitrile Derivatives for N-Type Air-Stable Organic Field-Effect Transistors.

The nitrogenization of phenyl rings on DIM derivatives not only enhances molecular coplanarity but also stabilizes molecular LUMO levels, favoring charge transfer and improving air stability. Therefore, n-type organic field-effect transistors (OFETs) that are based on DIM-N2C8 with nitrogen atoms on both sides of the phenyl rings exhibit a moderate electron mobility of 0.059 cm2 V-1 s-1 under ambient conditions.