Effects of Laser Treatment of Terbium-Doped Indium Oxide Thin Films and Transistors.

In this study, a KrF excimer laser with a high-absorption coefficient in metal oxide films and a wavelength of 248 nm was selected for the post-processing of a film and metal oxide thin film transistor (MOTFT). Due to the poor negative bias illumination stress (NBIS) stability of indium gallium zinc oxide thin film transistor (IGZO-TFT) devices, terbium-doped Tb:In2O3 material was selected as the target of this study. The XPS test revealed the presence of both Tb3+ and Tb4+ ions in the Tb:In2O3 film. It was hypothesized that the peak of the laser thermal effect was reduced and the action time was prolonged by the f-f jump of Tb3+ ions and the C-T jump of Tb4+ ions during the laser treatment. Studies related to the treatment of Tb:In2O3 films with different laser energy densities have been carried out. It is shown that as the laser energy density increases, the film density increases, the thickness decreases, the carrier concentration increases, and the optical band gap widens. Terbium has a low electronegativity (1.1 eV) and a high Tb-O dissociation energy (707 kJ/mol), which brings about a large lattice distortion. The Tb:In2O3 films did not show significant crystallization even under laser energy density treatment of up to 250 mJ/cm2. Compared with pure In2O3-TFT, the doping of Tb ions effectively reduces the off-state current (1.16 × 10-11 A vs. 1.66 × 10-12 A), improves the switching current ratio (1.63 × 106 vs. 1.34 × 107) and improves the NBIS stability (ΔVON = -10.4 V vs. 6.4 V) and positive bias illumination stress (PBIS) stability (ΔVON = 8 V vs. 1.6 V).

Surface plasmon resonance-mediated photocatalytic H2 generation.

The limited yield of H2 production has posed a significant challenge in contemporary research. To address this issue, researchers have turned to the application of surface plasmon resonance (SPR) materials in photocatalytic H2 generation SPR, arising from collective electron oscillations, enhances light absorption and facilitates efficient separation and transfer of electron-hole pairs in semiconductor systems, thereby boosting photocatalytic H2 production efficiency. However, existing reviews predominantly focus on SPR noble metals, neglecting non-noble metals and SPR semiconductors. In this review, we begin by elucidating five different SPR mechanisms, covering hot electron injection, electric field enhancement, light scattering, plasmon-induced resonant energy transfer, and photo-thermionic effect, by which SPR enhances photocatalytic activity. Subsequently, a comprehensive overview follows, detailing the application of SPR materials-metals, non-noble metals, and SPR semiconductors-in photocatalytic H2 production. Additionally, a personal perspective is offered on developing highly efficient SPR-based photocatalysis systems for solar-to-H2 conversion in the future. This review aims to guide the development of next-gen SPR-based materials for advancing solar-to-fuel conversion.

Inorganic-Organic Dual-Ligand-Regulated Photocatalysis of CdS@ZnxCd1-xS@ZnS Quantum Dots for Lignin Valorization.

In a dual-functional lignin valorization system, a harmonious oxidation and reduction rate is a prerequisite for high photocatalytic performance. Herein, an efficient and facile ligand manipulating strategy to balance the redox reaction process is exploited via decorating the surface of the CdS@ZnxCd1-xS@ZnS gradient-alloyed quantum dots with both inorganic ligands of hexafluorophosphate (PF6-) and organic ligands of mercaptopropionic acid (MPA). Inorganic ion ligands in this system provide a promotion for intermediator reduction reactions. By optimizing the ligand composition on the quantum dot surface, we achieve precise control over the extent of oxidation and reduction, enabling selective modification of reaction products; that is, the conversion rate of 2-phenoxy-1-phenylethanol reached 99%. Surface engineering by regulating the ligand type demonstrates that PF6- and thiocyanate (SCN-) inorganic ion ligands contribute significantly toward electron transfer, while MPA ligands have beneficial effects on the hole-transfer procedure, which is predominantly dependent on their steric hindrance, electrostatic action, and passivation effect. The present study offers insights into the development of efficient quantum dot photocatalysts for dual-functional biomass valorization through ligand design.

Research and Progress of Inorganic Infrared Electrochromic Materials and Devices.

BACKGROUND: Electrochromic materials can dynamically change their optical properties (such as transmittance, absorbance, and reflectance under the action of an applied voltage, and their research and application in the visible band have been widely concerned. In recent years, with the continuous development of electrochromic technology, the related research has been gradually extended to the infrared region. OBJECTIVE: This invited review aims to provide an overview of the current status of several inorganic infrared electrochromic materials, to provide some references for future research, and to promote the research and application of electrochromic technology in the infrared region. METHODS: This review summarizes various research results in the field of infrared electrochromic, which includes a detailed literature review and patent search. Starting from the key performance parameters and device structure characteristics of infrared electrochromic devices (ECDs), the research and progress of several types of inorganic infrared electrochromic materials, including metal oxides, plasma nanocrystals, and carbon nanomaterials, are mainly presented, and feasible optimization directions are also discussed. CONCLUSION: We believe that the potential of these materials for civilian and military applications, for example, infrared electrochromic smart windows, infrared stealth/disguise, and thermal control of spacecraft, can be fully exploited by optimizing the materials and their devices to improve their performance.

Bi2O2Se Nanowire/MoSe2 Mixed-Dimensional Polarization-Sensitive Photodiode with a Nanoscale Ultrafast-Response Channel.

In recent years, polarization-sensitive photodiodes based on one-dimensional/two-dimensional (1D/2D) van der Waals (vdWs) heterostructures have garnered significant attention due to the high specific surface area, strong orientation degree of 1D structures, and large photo-active area and mechanical flexibility of 2D structures. Therefore, they are applicable in wearable electronics, electrical-driven lasers, image sensing, optical communication, optical switches, etc. Herein, 1D Bi2O2Se nanowires have been successfully synthesized via chemical vapor deposition. Impressively, the strongest Raman vibration modes can be achieved along the short edge (y-axis) of Bi2O2Se nanowires with high crystalline quality, which originate from Se and Bi vacancies. Moreover, the Bi2O2Se/MoSe2 photodiode designed with type-II band alignment demonstrates a high rectification ratio of 103. Intuitively, the photocurrent peaks are mainly distributed in the overlapped region under the self-powered mode and reverse bias, within the wavelength range of 400-nm. The resulting device exhibits excellent optoelectrical performances, including high responsivities (R) and fast response speed of 656 mA/W and 350/380 µs (zero bias) and 17.17 A/W and 100/110 µs (-1 V) under 635 nm illumination, surpassing the majority of reported mixed-dimensional photodiodes. The most significant feature of our photodiode is its highest photocurrent anisotropic ratio of ∼2.2 (-0.8 V) along the long side (x-axis) of Bi2O2Se nanowires under 635 nm illumination. The above results reveal a robust and distinctive correlation between structural defects and polarized orientation for 1D Bi2O2Se nanowires. Furthermore, 1D Bi2O2Se nanowires appear to be a great potential candidate for high-performance rectifiers, polarization-sensitive photodiodes, and phototransistors based on mixed vdWs heterostructures.

Self-Powered Photodetector with High Efficiency and Polarization Sensitivity Enabled by WSe2/Ta2NiSe5/WSe2 van der Waals Dual Heterojunction.

Self-powered photodetectors have triggered widespread attention because of the requirement of Internet of Things (IoT) application and low power consumption. However, it is challenging to simultaneously implement miniaturization, high quantum efficiency, and multifunctionalization. Here, we report a high-efficiency and polarization-sensitive photodetector enabled by two-dimensional (2D) WSe2/Ta2NiSe5/WSe2 van der Waals (vdW) dual heterojunctions (DHJ) along with a sandwich-like electrode pair. On account of enhanced light collection efficiency and two opposite built-in electric fields at the hetero-interfaces, the DHJ device achieves not only a broadband spectral response of 400-1550 nm but outstanding performance under 635 nm light illumination including an ultrahigh external quantum efficiency (EQE) of 85.5%, a pronounced power conversion efficiency (PCE) of 1.9%, and a fast response speed of 420/640 µs, which is much better than that of the WSe2/Ta2NiSe5 single heterojunction (SHJ). Significantly, based on the strong in-plane anisotropy of 2D Ta2NiSe5 nanosheets, the DHJ device shows competitive polarization sensitivities of 13.9 and 14.8 under 635 and 808 nm light, respectively. Furthermore, an excellent self-powered visible imaging capability based on the DHJ device is demonstrated. These results pave a promising platform for realizing self-powered photodetectors with high performance and multifunctionality.

Adjusting Microscale to Atomic-Scale Structural Order in PbS Nanocrystal Superlattice for Enhanced Photodetector Performance.

An investigation is presented into the effect of the long-range order on the optoelectronic properties of PbS quantum dot (QD) superlattices, which form mesocrystals, for potential use in photodetector applications. By self-assembly of QD nanocrystals on an Si/SiOx substrate, a highly ordered and densely packed PbS QD superlattice with a microscale size is obtained. The results demonstrate that annealing treatment induces mesocrystalline superlattices with preferred growth orientation, achieved by dislodging ligands. The improved orientation and electronic coupling of the mesocrystalline superlattices exhibit superior photodetector performance compared to disordered QD structures and closely packed superlattices. This improved performance is attributed to atomic alignment between QDs, leading to enhanced electronic coupling. The findings suggest that these mesocrystalline superlattices have promising potential for the next generation of QD optoelectronic devices.

Effect of Surface Treatment on Performance and Internal Stacking Mode of Electrohydrodynamic Printed Graphene and Its Microsupercapacitor.

Microelectronic devices are developing rapidly in portability, wearability, and implantability. This puts forward an urgent requirement for the delicate deposition process of materials. Electrohydrodynamic printing has attracted academic and industrial attention in preparing ultrahigh-density microelectronic devices as a new noncontact, direct graphic, and low-loss thin film deposition process. In this work, a printed graphene with narrow line width is realized by combining the electrohydrodynamic printing and surface treatment. The line width of printed graphene on the hydrophobic treatment surface reduced from 80 to 28 µm. The resistivity decreased from 0.949 to 0.263 Ω·mm. Unexpectedly, hydrophobic treatment can effectively induce random stacking of electrohydrodynamic printed graphene, which avoids parallel stacking and agglomeration of graphene sheets. The performance of printed graphene is thus effectively improved. After optimization, a graphene planar supercapacitor with a printed line width of 28 µm is successfully obtained. Its capacitance can reach 5.39 mF/cm2 at 50 mV/s, which is twice higher than that of the untreated devices. The device maintains 84.7% capacitance after 5000 cycles. This work provides a reference for preparing microelectronic devices by ultrahigh precision printing and a new direction for optimizing two-dimensional material properties through stacking adjustment.

Parallel implement of real-time delta-sigma modulation for digital mobile fronthaul.

We propose and experimentally demonstrate a novel FPGA-based parallel architecture for delta-sigma modulation (DSM) for digital mobile fronthaul employing the DSM interface. This architecture breaks the limitations of the feedback loop in DSM, is not constrained by critical paths, and supports fully parallel processing, so it can deal with high sampling rates at low hardware operating speeds. In contrast to other parallel schemes, the proposed bit-by-bit quantization DSM avoid significant storage resources requirements for buffering. A real-time experimental system using Xilinx Kintex Ultrascale FPGA was implemented to validate the feasibility of the proposed architecture. 14 carrier aggregated orthogonal frequency division multiplexing (OFDM) signals are digitized by DSM into a 5Gb/s PAM4 signal and transmitted over a 20 km single-mode fiber (SMF). As a waveform-agnostic digitization interface, we also experimentally demonstrated the DSM with 14 carrier aggregated filter-bank-multicarrier (FBMC) signals, which can achieve better EVM performance.

From Traditional to Novel Printed Electrochromic Devices: Material, Structure and Device.

Electrochromic materials have been considered as a new way to achieve energy savings in the building sector due to their potential applications in smart windows, cars, aircrafts, etc. However, the high cost of manufacturing ECDs using the conventional manufacturing methods has limited its commercialization. It is the advantages of low cost as well as resource saving, green environment protection, flexibility and large area production that make printing electronic technology fit for manufacturing electrochromic devices. This paper reviews the progress of research on printed electrochromic devices (ECDs), detailing the preparation of ECDs by screen printing, inkjet printing and 3D printing, using the scientific properties of discrete definition printing method. Up to now, screen printing holds the largest share in the electrochromic industry due to its low cost and large ink output nature, which makes it suitable especially for printing on large surfaces. Though inkjet printing has the advantages of high precision and the highest coloration efficiency (CE) can be up to 542 ± 10 cm2C-1, it has developed smoothly, and has not shown rigid needs. Inkjet printing is suitable for the personalized printing production of high precision and small batch electronic devices. Since 3D printing is a new manufacturing technology in the 21st century, with the characteristics of integrated molding and being highly controllable, which make it suitable for customized printing of complex devices, such as all kinds of sensors, it has gained increasing attention in the past decade. Finally, the possibility of combining screen printing with inkjet printing to produce high performance ECDs is discussed.

Carbon Quantum Dots Bridged TiO2/CdIn2S4 toward Photocatalytic Upgrading of Polycyclic Aromatic Hydrocarbons to Benzaldehyde.

Conversion of hazardous compounds to value-added chemicals using clean energy possesses massive industrial interest. This applies especially to the hazardous compounds that are frequently released in daily life. In this work, a S-scheme photocatalyst is optimized by rational loading of carbon quantum dots (CQDs) during the synthetic process. As a bridge, the presence of CQDs between TiO2 and CdIn2S4 improves the electron extraction from TiO2 and supports the charge transport in S-scheme. Thanks to this, the TiO2/CQDs/CdIn2S4 presents outstanding photoactivity in converting the polycyclic aromatic hydrocarbons (PAHs) released by cigarette to value-added benzaldehyde. The optimized photocatalyst performs 87.79% conversion rate and 72.76% selectivity in 1 h reaction under a simulated solar source, as confirmed by FT-IR and GC-MS. A combination of experiments and theoretical calculations are conducted to demonstrate the role of CQDs in TiO2/CQDs/CdIn2S4 toward photocatalysis.

Interfacial Engineering of Semicoherent Interface at Purified CsPbBr3 Quantum Dots/2D-PbSe for Optimal CO2 Photoreduction Performance.

Heterogeneous photocatalysts are extensively used to achieve interfacial electric fields for acceleration of oriented charge carrier transport and further promotion of photocatalytic redox reactions. Unfortunately, the incoherent interfaces are almost present in the heterostructures owing to large lattice mismatch accompanied by the interfacial defects and high density of gap states, acting as high energy barriers for charge migration. In this work, we report the atomic engineering of CsPbBr3/PbSe heterogeneous interfaces and conversion from incoherent features to semicoherent characters via methyl acetate (MeOAc) purification of CsPbBr3 quantum dots (QDs) before composited with two-dimensional (2D)-PbSe, which is confirmed by high-resolution transmission electron microscopy. The photocatalytic performances and theoretical calculations indicate that semicoherent interfaces are favorable for improving the activity and reactivity of the heterostructure, triggering 3 times enhanced photocatalytic CO2 reduction rate with 91% selectivity and satisfactory stability. This study proposes a facile method for photocatalytic heterojunctions to transform incoherent interfaces to photocatalytically beneficial semicoherent boundaries, accompanying with a systematic analysis of the consequent chemical dynamics to demonstrate the mechanism of the semicoherent interface for supporting photocatalysis. The understandings gained from this work are valuable for rational interfacial lattice engineering of heterogeneous photocatalysts for efficient solar fuel production.

Low-pressure PVD growth SnS/InSe vertical heterojunctions with type-II band alignment for typical nanoelectronics.

Two-dimensional (2D) polarization-sensitive detection as a new photoelectric application technology is extensively investigated. However, most devices are mainly based on individual anisotropic materials, which suffer from large dark current and relatively low anisotropic ratio, limiting the practical application in polarized imaging system. Herein, we design a van der Waals (vdWs) p-type SnS/n-type InSe vertical heterojunction with proposed type-II band alignment via low-pressure physical vapor deposition (LPPVD) and dry transfer method. The performance compared with the distinctive thickness of anisotropic SnS component was first studied. The fabricated device with a thick (80 nm) SnS nanosheet exhibits a larger rectification ratio exceeding 103. Moreover, the SnS/InSe heterostructure shows a broadband spectral photoresponse from 405 to 1100 nm with a significant photovoltaic effect. Due to efficient photogenerated carrier separation across the wide depletion region at zero bias, the device with thinner (12.4 nm) SnS exhibits trade-off photoresponse performance with a maximum responsivity of 215 mA W-1, an external quantum efficiency of 42.2%, specific detectivity of 1.05 × 1010 Jones, and response time of 8.6/4.2 ms under 635 nm illumination, respectively. In contrast, benefiting from the stronger in-plane anisotropic structure of thinner SnS component, the device delivers a large photocurrent anisotropic ratio of 4.6 under 635 nm illumination in a zigzag manner. Above all, our work provides a new design scheme for multifunctional optoelectronic applications based on thickness-dependent 2D vdWs heterostructures.

Research Progresses in Microstructure Designs of Flexible Pressure Sensors.

Flexible electronic technology is one of the research hotspots, and numerous wearable devices have been widely used in our daily life. As an important part of wearable devices, flexible sensors can effectively detect various stimuli related to specific environments or biological species, having a very bright development prospect. Therefore, there has been lots of studies devoted to developing high-performance flexible pressure sensors. In addition to developing a variety of materials with excellent performances, the microstructure designs of materials can also effectively improve the performances of sensors, which has brought new ideas to scientists and attracted their attention increasingly. This paper will summarize the flexible pressure sensors based on material microstructure designs in recent years. The paper will mainly discuss the processing methods and characteristics of various sensors with different microstructures, and compare the advantages, disadvantages, and application scenarios of them. At the same time, the main application fields of flexible pressure sensors based on microstructure designs will be listed, and their future development and challenges will be discussed.

Decoration of PdAg Dual-Metallic Alloy Nanoparticles on Z-Scheme α-Fe2O3/CdS for Manipulable Products via Photocatalytic Reduction of Carbon Dioxide.

Metal nanoparticles have been extensively used as co-catalysts in photocatalytic systems in order to pursue improvements in both reaction kinetics and selectivity. In this work, PdAg dual-metallic nanoparticles synthesized by the co-reduction method were decorated on a well-established α-Fe2O3/CdS Z-scheme photoactive material as a co-catalyst to study their performance for promoting the photoreduction of CO2. Herein, α-Fe2O3 and CdS were in situ synthesized on fluorine-doped tin oxide (FTO) glass by hydrothermal and SILAR (successive ionic layer adsorption and reaction) methods, respectively. The direct Z-scheme charge transfer path between Fe2O3 and CdS and the effective electron migration toward the PdAg mainly contributed to the excellent photocatalytic CO2 reduction performance. The controllable work function based on Pd (5.12) and Ag (4.26) constructed an appropriate band alignment with α-Fe2O3/CdS and displayed favorable production for CH4 rather than CO. The optimum ratio of PdAg 1:2 performed a 48% enhancement than pure Pd for photoreduction of CO2. Meanwhile, the enhanced charge separation improved the photoelectrochemical performance and photocurrent generation, and reduced the electrical resistance between components. This work provided insights into the dual-metallic co-catalyst for boosting the activity and selectivity of photocatalytic CO2 reduction.

Solution-Processed Silicon Doped Tin Oxide Thin Films and Thin-Film Transistors Based on Tetraethyl Orthosilicate.

Recently, tin oxide (SnO2) has been the preferred thin film material for semiconductor devices such as thin-film transistors (TFTs) due to its low cost, non-toxicity, and superior electrical performance. However, the high oxygen vacancy (VO) concentration leads to poor performance of SnO2 thin films and devices. In this paper, with tetraethyl orthosilicate (TEOS) as the Si source, which can decompose to release heat and supply energy when annealing, Si doped SnO2 (STO) films and inverted staggered STO TFTs were successfully fabricated by a solution method. An XPS analysis showed that Si doping can effectively inhibit the formation of VO, thus reducing the carrier concentration and improving the quality of SnO2 films. In addition, the heat released from TEOS can modestly lower the preparation temperature of STO films. By optimizing the annealing temperature and Si doping content, 350 °C annealed STO TFTs with 5 at.% Si exhibited the best device performance: Ioff was as low as 10-10 A, Ion/Ioff reached a magnitude of 104, and Von was 1.51 V. Utilizing TEOS as an Si source has a certain reference significance for solution-processed metal oxide thin films in the future.

An Electrochemical Sensor Based on Electropolymerization of ß-Cyclodextrin on Glassy Carbon Electrode for the Determination of Fenitrothion.

An electrochemical sensor enabled by electropolymerization (EP) of ß-cyclodextrin on glassy carbon electrode (ß-CDP/GCE) is built for the determination of fenitrothion (FNT). The effects of the EP cycles, pH value, and enrichment time on the electrochemical response of FNT were studied. With the optimum conditions, good linear relationships between the current of the reduction peak of the nitroso derivative of FNT and the concentration are obtained in the range of 10-150 and 150-4000 ng/mL, with a detection limit of 6 ng/mL (S/N = 3). ß-CDP/GCE also exhibits a satisfactory applicability in cabbage and tap water, with recovery values between 98.43% and 112%. These outstanding results suggest that ß-CDP/GCE could be a new effective alternative for the determination of FNT in real samples.

High-Stability Silver Nanowire-Al2O3 Composite Flexible Transparent Electrodes Prepared by Electrodeposition.

Silver nanowire (AgNW) conductive film fabricated by solution processing was investigated as an alternative to indium tin oxide (ITO) in flexible transparent electrodes. In this paper, we studied a facile and effective method by electrodepositing Al2O3 on the surface of AgNWs. As a result, flexible transparent electrodes with improved stability could be obtained by electrodepositing Al2O3. It was found that, as the annealing temperature rises, the Al2O3 coating layer can be transformed from Al2O3·H2O into a denser amorphous state at 150 °C. By studying the increase of electrodeposition temperature, it was observed that the transmittance of the AgNW-Al2O3 composite films first rose to the maximum at 70 °C and then decreased. With the increase of the electrodeposition time, the figure of merit (FoM) of the composite films increased and reached the maximum when the time was 40 s. Through optimizing the experimental parameters, a high-stability AgNW flexible transparent electrode using polyimide (PI) as a substrate was prepared without sacrificing optical and electrical performance by electrodepositing at -1.1 V and 70 °C for 40 s with 0.1 mol/L Al(NO3)3 as the electrolyte, which can withstand a high temperature of 250 °C or 250,000 bending cycles with a bending radius of 4 mm.

Effect of Sputtering Oxygen Partial Pressure on the Praseodymium-Doped InZnO Thin Film Transistor Using Microwave Photoconductivity Decay Method.

The praseodymium-doped indium-zinc-oxide (PrIZO) thin film transistor (TFT) shows broad application prospects in the new generation of display technologies due to its high performance and high stability. However, traditional device performance evaluation methods need to be carried out after the end of the entire preparation process, which leads to the high-performance device preparation process that takes a lot of time and costs. Therefore, there is a lack of effective methods to optimize the device preparation process. In this paper, the effect of sputtering oxygen partial pressure on the properties of PrIZO thin film was studied, and the quality of PrIZO thin film was quickly evaluated by the microwave photoconductivity decay (µ-PCD) method. The µ-PCD results show that as the oxygen partial pressure increases, the peak first increases and then decreases, while the D value shows the opposite trend. The quality of PrIZO thin film prepared under 10% oxygen partial pressure is optimal due to its low localized defect states. The electric performance of PrIZO TFTs prepared under different oxygen partial pressures is consistent with the µ-PCD results. The optimal PrIZO TFT prepared under 10% oxygen partial pressure exhibits good electric performance with a threshold voltage (Vth) of 1.9 V, a mobility (µsat) of 24.4 cm2·V-1·s-1, an Ion/Ioff ratio of 2.03 × 107, and a subthreshold swing (SS) of 0.14 V·dec-1.

Photocatalytic Degradation of Tobacco Tar Using CsPbBr3 Quantum Dots Modified Bi2WO6 Composite Photocatalyst.

Polycyclic aromatic hydrocarbons (PAHs) in tobacco tar are regarded as a significant threat to human health. PAHs are formed due to the incomplete combustion of organics in tobacco and cigarette paper. Herein, for the first time, we extended the application of CsPbBr3 quantum dots (CsPbBr3) to the photocatalytic degradation of tobacco tar, which was collected from used cigarette filters. To optimize the photoactivity, CsPbBr3 was coupled with Bi2WO6 for the construction of a type-II photocatalyst. The photocatalytic performance of the CsPbBr3/Bi2WO6 composite was evaluated by the degradation rate of PAHs from tobacco tar under simulated solar irradiation. The results revealed that CsPbBr3/Bi2WO6 possesses a large specific surface area, outstanding absorption ability, good light absorption and rapid charge separation. As a result, in addition to good stability, the composite photocatalyst performed remarkably well in degrading PAHs (over 96% were removed in 50 mins of irradiation by AM 1.5 G). This study sheds light on promising novel applications of halide perovskite.