Whole-Genome Sequence of a Strain of Brucella melitensis Isolated from a Patient with Swelling of the Right Testicle in Inner Mongolia, China.

This report describes the isolation, sequencing, and annotation of Ws20160810, which was isolated from a blood sample from a brucellosis patient suffering from swelling of the right testicle in the Inner Mongolia Autonomous Region, China. The genome size was 3,244,234 bp with a 57.23% GC content, 3,294 coding DNA sequences (CDSs), 55 tRNAs, 5 rRNAs (5S [n = 2], 16S [n = 1], and 23S [n = 2]), and 3 small RNAs (sRNAs).

Molecular epidemiology of Brucella abortus strains from cattle in Inner Mongolia, China.

Although the prevalence of brucellosis in Inner Mongolia Autonomous Region currently remains high, data available on the epidemiological of circulating Brucella abortus strains were limited. A total of 75 isolates obtained from cattle, sheep, and humans were analysed using both the classical method and multiple locus variable-number tandem repeat analysis (MLVA). There are at least three B. abortus biovars (1, 3 and 6) in this region, and B. abortus biovar 3 is the predominant one. Ten known MLVA-11 genotypes were identified, of which five genotypes (72, 75, 78, 82 and 210) were shared among strains from this study and others previously collected in two to seven different nations, suggesting that this population has multiple geographic origins. An MLVA-16 assay sorted the 75 B. abortus strains into two groups (I and II), 5 clusters (A-E) and 44 genotypes (GT1-44), with 26 unique genotypes represented by single isolates, indicating that these B. abortus brucellosis cases were not directly epidemiologically related. The remaining 18 shared genotypes (among a total of 47 isolates) were represented by two to eight isolates, suggesting that there were epidemiologically related pathogens from each shared genotype among the cases. Importantly, the cluster B1 branch including 22 cluster isolates with identical or similar genotypes confirmed the occurrence of a concentrated outbreak epidemic in the eastern region during 1988-1995. This work will contribute to better understanding of B. abortus brucellosis epidemiology in Inner Mongolia.

A Label-Free and Sensitive Fluorescent Qualitative Assay for Bisphenol A Based on Rolling Circle Amplification/Exonuclease III-Combined Cascade Amplification.

Bisphenol A (BPA) detection in drinking water and food packaging materials has attracted much attention since the discovery that BPA can interfere with normal physiological processes and cause adverse health effects. Here, we constructed a label-free aptamer fluorescent assay for selective and sensitive detection of BPA based on the rolling circle amplification (RCA)/Exonuclease III (Exo III)-combined cascade amplification strategy. First, the duplex DNA probe (RP) with anti-BPA aptamer and trigger sequence was designed for BPA recognition and signal amplification. Next, under the action of BPA, the trigger probe was liberated from RP to initiate RCA reaction as primary amplification. Subsequently, the RCA products were used to trigger Exo III assisted secondary amplification with the help of hairpin probes, producing plenty of "G-quadruplex" in lantern-like structures. Finally, the continuously enriched "G-quadruplex lanterns" were lightened by zinc(II)-protoporphyrin IX (ZnPPIX) generating enhanced fluorescence signals. By integrating the primary RCA and secondary Exo III mediated cascade amplification strategy, this method displayed an excellent sensitivity with the detection limits of 5.4 × 10-17 M. In addition, the anti-BPA aptamer exhibits high recognition ability with BPA, guaranteeing the specificity of detection. The reporter signal probe (G-quadruplex with ZnPPIX) provides a label-free fluorescence signals readout without complicated labeling procedures, making the method simple in design and cost-effective in operation. Moreover, environmental samples analysis was also performed, suggesting that our strategy was reliable and had a great potential application in environmental monitoring.

[Structure and luminescence properties of ZnO films prepared by RF magnetron sputtering].

ZnO thin films with c-axis preferred orientation were prepared on glass substrates by radio frequency co-reactive magnetron sputtering technique, and the effect of the substrate temperature on the microstructure and the luminescence properties of the ZnO thin films was studied by X-ray diffractometry (XRD), scanning probe microscopy(SPM)and fluorescence spectrophotometer. The XRD patterns of the four ZnO samples prepared at different substrate temperatures were measured by XRD. figure which embodied the relation of full wave at half maximum (FWHM) and grain size of the four samples as a function of substrate temperatures was given out, too. It was concluded that the crystallization of the samples was promoted by appropriate substrate temperatures, the results consist with the AFM microscopic photos of the two samples. In addition, the photoluminescence (PL) spectra of the four samples were measured at room temperature. Violet peak located at about 400 nm, blue peak located at 446 nm and green peak located at about 502 nm were observed from the PL spectra of the four samples. With the rise of the growth temperature, the intensity of the violet peak and the blue peak increased sharply, and the intensity of green peak increased at the same time. It was concluded that the violet peak may correspond to the exciton emission, the blue peak was mainly attributed to the interstitial Zinc (Zn(i)) and the green emission peak must be related to the deep level defects of oxygen (Vo) in the crystal of ZnO films. Absorption property of the samples were researched by UV spectrophotometer, and the absorption spectrum of the film deposited at 150 degrees C and the (alpha h nu)2 versus h nu of the ZnO thin film were given. From the absorption spectrum, it could be observed that the spectroscopic data in UV region showed split peak and shoulder peak. With analysis of the absorption spectrum of the sample deposited at 150 degrees C, it was proved that our analysis of the photoluminescence mechanism was reasonable.

[Comparative study on photoluminescence from Ge/PS and Ge/SiO2 thin films].

Ge thin films were deposited on porous silicon substrate using the RF magnetron sputtering technique with Ge target and sputtering for 4, 8 and 12 min respectively. Ge-containing silicon oxide thin films were deposited on n-type Si substrate using the RF magnetron sputtering technique with a Ge-SiO2 composite uarget and with Ge wafer in the target having percentage areas of 5%, 15% and 30%, respectively. These samples were annealed in a N2 atmosphere at 300 degrees C, 600 degrees C and 900 degrees C for 30 min. A comparative study of photoluminescence from Ge/PS and Ge/SiO2 thin films is reported. The FTIR was used to research the structure of Ge/PS thin films. The FTIR showed that the Si-Hx (x = 1-3) absorption peaks disappeared, but Si-O-Si, Si2O-SiH and H2Si-O2 absorption peaks were enhanced, and the surfaces of Ge/PS thin films have formed a goodish integrated cross-linked Si-O-Si network. It was indicated that Ge thin films deposited on porous silicon can improve the level of oxidation. At the same time, the Si-O and Si-Si bonds on the surface of PS thin films were broken, but some new bands such as Si-Ge, Ge-Ge and Ge-O formed. As the results of the experiment showed that the photoluminescence peaks of Ge/PS thin films were located at 517 nm, the sputtering time influenced the intensity of light-emission remarkably and with increasing the thickness of Ge layer coated, the intensity of light-emission dropped abruptly. When Ge sputtered for 12 min, the photolumines cence peak almost disappeared. The photoluminescence peaks of Ge/SiO2 thin films were located at 580 nm, the percentage areas of Ge wafer in the target influenced the intensity of light-emission obviously, and with increasing the percentage area of Ge wafer in the sputtering target, the photoluminescence intensity was reduced greatly. Though with increasing the annealing temperature of different thin films, all the photolu minescence spectra from Ge/PS and Ge/SiO2 thin films changed scarcely, and our explanation is that Ge-related defects at the interfaces between PS and the Ge nanocrystals embedded in the pores were responsible for the photoluminescence of Ge/PS thin films. However, the photoluminescence of Ge/SiO2 thin films' light emission originates from luminescence centers in Si oxide films. Ge/PS and Ge/SiO2 thin films both contained Ge nanocrystals and silicon oxide layer, and have similar structure, however, they have different mechanism behind photoluminescence. The experimental results have been explained reasonably.