Quantum spin driven Yu-Shiba-Rusinov multiplets and fermion-parity-preserving phase transition in K3C60.

Magnetic impurities in superconductors are of increasing interest due to emergent Yu-Shiba-Rusinov (YSR) states and Majorana zero modes for fault-tolerant quantum computation. However, a direct relationship between the YSR multiple states and magnetic anisotropy splitting of quantum impurity spins remains poorly characterized. By using scanning tunneling microscopy, we systematically resolve individual transition-metal (Fe, Cr, and Ni) impurities induced YSR multiplets as well as their Zeeman effects in the K3C60 superconductor. The YSR multiplets show identical d orbital-like wave functions that are symmetry-mismatched to the threefold K3C60(1 1 1) host surface, breaking point-group symmetries of the spatial distribution of YSR bound states in real space. Remarkably, we identify an unprecedented fermion-parity-preserving quantum phase transition between ground states with opposite signs of the uniaxial magnetic anisotropy that can be manipulated by an external magnetic field. These findings can be readily understood in terms of anisotropy splitting of quantum impurity spins, and thus elucidate the intricate interplay between the magnetic anisotropy and YSR multiplets.

Direct observation of nodeless superconductivity and phonon modes in electron-doped copper oxide Sr1-xNdxCuO2.

The microscopic understanding of high-temperature superconductivity in cuprates has been hindered by the apparent complexity of crystal structures in these materials. We used scanning tunneling microscopy and spectroscopy to study the electron-doped copper oxide compound Sr1- x Nd x CuO2, which has only bare cations separating the CuO2 planes and thus the simplest infinite-layer structure of all cuprate superconductors. Tunneling conductance spectra of the major CuO2 planes in the superconducting state revealed direct evidence for a nodeless pairing gap, regardless of variation of its magnitude with the local doping of trivalent neodymium. Furthermore, three distinct bosonic modes are observed as multiple peak-dip-hump features outside the superconducting gaps and their respective energies depend little on the spatially varying gaps. As well as the bosonic modes, with energies identical to those of the external, bending and stretching phonons of copper oxides, our findings reveal the origin of the bosonic modes in lattice vibrations rather than spin excitations.

Berry-Phase Switch in Electrostatically Confined Topological Surface States.

Here, we visualize the trapping of topological surface states in the circular n-p junctions on the top surface of the seven-quintuple-layer three dimensional (3D) topological insulator (TI) Sb_{2}Te_{3} epitaxial films. As shown by spatially dependent and field-dependent tunneling spectra, these trapped resonances show field-induced splittings between the degenerate time-reversal-symmetric states at zero magnetic field. These behaviors are attributed unambiguously to Berry-phase switch by comparing the experimental data with both numerical and semiclassical simulations. The successful electrostatic trapping of topological surface states in epitaxial films and the observation of Berry-phase switch provide a rich platform of exploiting new ideas for TI-based quantum devices.

Atomic-scale probing of heterointerface phonon bridges in nitride semiconductor.

Interface phonon modes that are generated by several atomic layers at the heterointerface play a major role in the interface thermal conductance for nanoscale high-power devices such as nitride-based high-electron-mobility transistors and light-emitting diodes. Here we measure the local phonon spectra across AlN/Si and AlN/Al interfaces using atomically resolved vibrational electron energy-loss spectroscopy in a scanning transmission electron microscope. At the AlN/Si interface, we observe various interface phonon modes, of which the extended and localized modes act as bridges to connect the bulk AlN modes and bulk Si modes and are expected to boost the phonon transport, thus substantially contributing to interface thermal conductance. In comparison, no such phonon bridge is observed at the AlN/Al interface, for which partially extended modes dominate the interface thermal conductivity. This work provides valuable insights into understanding the interfacial thermal transport in nitride semiconductors and useful guidance for thermal management via interface engineering.

Direct Visualization of Ambipolar Mott Transition in Cuprate CuO_{2} Planes.

Identifying the essence of doped Mott insulators is one of the major outstanding problems in condensed matter physics and the key to understanding the high-temperature superconductivity in cuprates. We report real space visualization of Mott insulator-metal transition in Sr_{1-x}La_{x}CuO_{2+y} cuprate films that cover both the electron- and hole-doped regimes. Tunneling conductance measurements directly on the copper-oxide (CuO_{2}) planes reveal a systematic shift in the Fermi level, while the fundamental Mott-Hubbard band structure remains unchanged. This is further demonstrated by exploring the atomic-scale electronic response of CuO_{2} to substitutional dopants and intrinsic defects in a sister compound Sr_{0.92}Nd_{0.08}CuO_{2}. The results may be better explained in the framework of self-modulation doping, similar to that in semiconductor heterostructures, and form a basis for developing any microscopic theories for cuprate superconductivity.

Direct Observation of Full-Gap Superconductivity and Pseudogap in Two-Dimensional Fullerides.

Alkali-fulleride superconductors with a maximum critical temperature T_{c}∼40 K exhibit a similar electronic phase diagram to that of unconventional high-T_{c} superconductors. Here we employ cryogenic scanning tunneling microscopy to show that trilayer K_{3}C_{60} displays fully gapped strong coupling s-wave superconductivity, accompanied by a pseudogap above T_{c}∼22 K and within vortices. A precise control of the electronic correlations and potassium doping enables us to reveal that superconductivity occurs near a superconductor-Mott-insulator transition and reaches maximum at half-filling. The s-wave symmetry retains over the entire phase diagram, which, in conjunction with an abrupt decline of the superconductivity below half-filling, indicates that alkali fullerides are predominantly phonon-mediated superconductors, although the electronic correlations also come into play.

Selective trapping of hexagonally warped topological surface states in a triangular quantum corral.

The surface of a three-dimensional topological insulator (TI) hosts two-dimensional massless Dirac fermions (DFs), the gapless and spin-helical nature of which leads to their high transmission through surface defects or potential barriers. Here, we report the behaviors of topological surface states (TSS) in a triangular quantum corral (TQC) which, unlike a circular corral, is supposed to be totally transparent for DFs. By real-space mapping of the electronic structure of TQCs, both the trapping and detrapping behaviors of the TSS are observed. The selection rules are found to be governed by the geometry and spin texture of the constant energy contour of TSS upon the strong hexagonal warping in Bi2Te3. Our work indicates the extended nature of TSS and elucidates the selection rules of the trapping of TSS in the presence of a complicated surface state structure, giving insights into the effective engineering of DFs in TIs.

Interface enhanced superconductivity in monolayer FeSe films on MgO(001): charge transfer with atomic substitution.

Interface enhanced superconductivity over 50 K has been discovered in monolayer FeSe films grown on several TiO2-terminated oxide substrates. Whether such phenomenon exists in other oxide substrates remains an extremely interesting topic. Here we report enhanced superconductivity with an onset transition temperature of 18 K in monolayer FeSe on MgO(001) substrate by transport measurement. Scanning transmission electron microscopy investigation on the interface structure indicates that FeSe films grow epitaxially on MgO(001) and that overlayer Fe atoms diffuse into the top two layers of MgO and substitute Mg atoms. Our density functional theory calculations reveal that this substitution promotes the charge transfer from the MgO substrate to the FeSe films, an essential process that also occurs in monolayer FeSe on TiO2-terminated oxides and contributes to the enhanced superconductivity therein. Our finding suggests that superconductivity enhancement in monolayer FeSe films on oxides substrates is rather general as long as charge transfer is allowed at the interface, thus pointing out an explicit direction for searching for new high temperature superconductivity by interface engineering.

Enhancing the Quantum Anomalous Hall Effect by Magnetic Codoping in a Topological Insulator.

The quantum anomalous Hall (QAH) effect, which has been realized in magnetic topological insulators (TIs), is the key to applications of dissipationless quantum Hall edge states in electronic devices. However, investigations and utilizations of the QAH effect are limited by the ultralow temperatures needed to reach full quantization-usually below 100 mK in either Cr- or V-doped (Bi,Sb)2 Te3 of the two experimentally confirmed QAH materials. Here it is shown that by codoping Cr and V magnetic elements in (Bi,Sb)2 Te3 TI, the temperature of the QAH effect can be significantly increased such that full quantization is achieved at 300 mK, and zero-field Hall resistance of 0.97 h/e2 is observed at 1.5 K. A systematic transport study of the codoped (Bi,Sb)2 Te3 films with varied Cr/V ratios reveals that magnetic codoping improves the homogeneity of ferromagnetism and modulates the surface band structure. This work demonstrates magnetic codoping to be an effective strategy for achieving high-temperature QAH effect in TIs.

Experimental signature of topological superconductivity and Majorana zero modes on ß-Bi2Pd thin films.

The search for Majorana fermions in topological superconductors is one of paramount research targets in physics today. Using a cryogenic scanning tunneling microscopy, we here report the signature of topologically nontrivial superconductivity on a single material of ß-Bi2Pd films grown by molecular beam epitaxy. The superconducting gap associated with spinless odd-parity pairing opens on the surface and appears much larger than the bulk one due to the Dirac-fermion enhanced parity mixing of surface pair potential. Zero bias conductance peaks, probably from Majorana zero modes supported by such superconducting states, are identified at magnetic vortices. The superconductivity exhibits resistance to nonmagnetic defects, characteristic of time-reversal-invariant topological superconductors. Our study reveals ß-Bi2Pd as a prime platform to generate, manipulate and braid Majorana zero modes for quantum computation.

High-Temperature Superconductivity in Single-Unit-Cell FeSe Films on Anatase TiO_{2}(001).

We report on the observation of high-temperature (T_{c}) superconductivity and magnetic vortices in single-unit-cell FeSe films on anatase TiO_{2}(001) substrate by using scanning tunneling microscopy. A systematic study and engineering of interfacial properties has clarified the essential roles of substrate in realizing the high-T_{c} superconductivity, probably via interface-induced electron-phonon coupling enhancement and charge transfer. By visualizing and tuning the oxygen vacancies at the interface, we find their very limited effect on the superconductivity, which excludes interfacial oxygen vacancies as the primary source for charge transfer between the substrate and FeSe films. Our findings have placed severe constraints on any microscopic model for the high-T_{c} superconductivity in FeSe-related heterostructures.

Observation of Double-Dome Superconductivity in Potassium-Doped FeSe Thin Films.

We report on the emergence of two disconnected superconducting domes in alkali-metal potassium- (K-)doped FeSe ultrathin films grown on graphitized SiC(0001). The superconductivity exhibits hypersensitivity to K dosage in the lower-T_{c} dome, whereas in the heavily electron-doped higher-T_{c} dome it becomes spatially homogeneous and robust against disorder, supportive of a conventional Cooper-pairing mechanism. Furthermore, the heavily K-doped multilayer FeSe films all reveal a large superconducting gap of ∼14 meV, irrespective of film thickness, verifying the higher-T_{c} superconductivity only in the topmost FeSe layer. The unusual finding of a double-dome superconducting phase is a step towards the mechanistic understanding of superconductivity in FeSe-derived superconductors.

Mapping the Electronic Structure of Each Ingredient Oxide Layer of High-T\{c} Cuprate Superconductor Bi{2}Sr{2}CaCu{2}O{8+δ}.

Understanding the mechanism of high transition temperature (T{c}) superconductivity in cuprates has been hindered by the apparent complexity of their multilayered crystal structure. Using a cryogenic scanning tunneling microscopy (STM), we report on layer-by-layer probing of the electronic structures of all ingredient planes (BiO, SrO, CuO{2}) of Bi{2}Sr{2}CaCu_2}O{8+δ} superconductor prepared by argon-ion bombardment and annealing technique. We show that the well-known pseudogap (PG) feature observed by STM is inherently a property of the BiO planes and thus irrelevant directly to Cooper pairing. The SrO planes exhibit an unexpected van Hove singularity near the Fermi level, while the CuO{2} planes are exclusively characterized by a smaller gap inside the PG. The small gap becomes invisible near T{c}, which we identify as the superconducting gap. The above results constitute severe constraints on any microscopic model for high T{c} superconductivity in cuprates.

Band Engineering of Dirac Surface States in Topological-Insulator-Based van der Waals Heterostructures.

The existence of a gapless Dirac surface band of a three dimensional (3D) topological insulator (TI) is guaranteed by the nontrivial topological character of the bulk band, yet the surface band dispersion is mainly determined by the environment near the surface. In this Letter, through in situ angle-resolved photoemission spectroscopy and first-principles calculation on 3D TI-based van der Waals heterostructures, we demonstrate that one can engineer the surface band structures of 3D TIs by surface modifications without destroying their topological nontrivial property. The result provides an accessible method to independently control the surface and bulk electronic structures of 3D TIs, and sheds light on designing artificial topological materials for electronic and spintronic purposes.

Quantum Griffiths singularity of superconductor-metal transition in Ga thin films.

The Griffiths singularity in a phase transition, caused by disorder effects, was predicted more than 40 years ago. Its signature, the divergence of the dynamical critical exponent, is challenging to observe experimentally. We report the experimental observation of the quantum Griffiths singularity in a two-dimensional superconducting system. We measured the transport properties of atomically thin gallium films and found that the films undergo superconductor-metal transitions with increasing magnetic field. Approaching the zero-temperature quantum critical point, we observed divergence of the dynamical critical exponent, which is consistent with the Griffiths singularity behavior. We interpret the observed superconductor-metal quantum phase transition as the infinite-randomness critical point, where the properties of the system are controlled by rare large superconducting regions.

Probing Dirac fermion dynamics in topological insulator Bi2Se3 films with a scanning tunneling microscope.

Scanning tunneling microscopy and spectroscopy have been used to investigate the femtosecond dynamics of Dirac fermions in the topological insulator Bi2Se3 ultrathin films. At the two-dimensional limit, bulk electrons become quantized and the quantization can be controlled by the film thickness at a single quintuple layer level. By studying the spatial decay of standing waves (quasiparticle interference patterns) off steps, we measure directly the energy and film thickness dependence of the phase relaxation length lϕ and inelastic scattering lifetime τ of topological surface-state electrons. We find that τ exhibits a remarkable (E - EF)(-2) energy dependence and increases with film thickness. We show that the features revealed are typical for electron-electron scattering between surface and bulk states.

Simultaneous electrical-field-effect modulation of both top and bottom Dirac surface states of epitaxial thin films of three-dimensional topological insulators.

It is crucial for the studies of the transport properties and quantum effects related to Dirac surface states of three-dimensional topological insulators (3D TIs) to be able to simultaneously tune the chemical potentials of both top and bottom surfaces of a 3D TI thin film. We have realized this in molecular beam epitaxy-grown thin films of 3D TIs, as well as magnetic 3D TIs, by fabricating dual-gate structures on them. The films could be tuned between n-type and p-type by each gate alone. Combined application of two gates can reduce the carrier density of a TI film to a much lower level than with only one of them and enhance the film resistance by 10,000%, implying that Fermi level is tuned very close to the Dirac points of both top and bottom surface states without crossing any bulk band. The result promises applications of 3D TIs in field effect devices.

Molecular beam epitaxy growth and post-growth annealing of FeSe films on SrTiO3: a scanning tunneling microscopy study.

Low temperature scanning tunneling microscopy and spectroscopy are used to investigate the atomic and electronic structure evolution of FeSe films grown on SrTiO3 as a function of post-growth annealing. Single unit cell FeSe films are found to bond strongly with the underlying substrate, and become superconductive with diminishing chemical bond disorders at the interface via post-annealing. For thicker FeSe films, post-annealing removes excess Se in the films and leads to a transition from semiconductor into metallic behaviors. In double and multilayer films, strain-induced complex textures are observed and suggested to be the main cause for the absent superconductivity.

Chemical-potential-dependent gap opening at the Dirac surface states of Bi2Se3 induced by aggregated substitutional Cr atoms.

With angle-resolved photoemission spectroscopy, gap opening is resolved at up to room temperature in the Dirac surface states of molecular beam epitaxy grown Cr-doped Bi2Se3 topological insulator films, which, however, show no long-range ferromagnetic order down to 1.5 K. The gap size is found decreasing with increasing electron-doping level. Scanning tunneling microscopy and first-principles calculations demonstrate that substitutional Cr atoms aggregate into superparamagnetic multimers in the Bi2Se3 matrix, which contribute to the observed chemical-potential-dependent gap opening in the Dirac surface states without long-range ferromagnetic order.

Imaging the electron-boson coupling in superconducting FeSe films using a scanning tunneling microscope.

Scanning tunneling spectroscopy has been used to reveal signatures of a bosonic mode in the local quasiparticle density of states of superconducting FeSe films. The mode appears below Tc as a "dip-hump" feature at energy Ω∼4.7kBTc beyond the superconducting gap Δ. Spectra on strained regions of the FeSe films reveal simultaneous decreases in Δ and Ω. This contrasts with all previous reports on other high-Tc superconductors, where Δ locally anticorrelates with Ω. A local strong coupling model is found to reconcile the discrepancy well, and to provide a unified picture of the electron-boson coupling in unconventional superconductors.