Widely-tunable, narrow-linewidth III-V/silicon hybrid external-cavity laser for coherent communication.

We demonstrate a III-V/silicon hybrid external cavity laser with a tuning range larger than 60 nm at the C-band on a silicon-on-insulator platform. A III-V semiconductor gain chip is hybridized into the silicon chip by edge-coupling the silicon chip through a Si3N4 spot size converter. The demonstrated packaging method requires only passive alignment and is thus suitable for high-volume production. The laser has a largest output power of 11 mW with a maximum wall-plug efficiency of 4.2%, tunability of 60 nm (more than covering the C-band), and a side-mode suppression ratio of 55 dB (>46 dB across the C-band). The lowest measured linewidth is 37 kHz (<80 kHz across the C-band), which is the narrowest linewidth using a silicon-based external cavity. In addition, we successfully demonstrate all silicon-photonics-based transmission of 34 Gbaud (272 Gb/s) dual-polarization 16-QAM using our integrated laser and silicon photonic coherent transceiver. The results show no additional penalty compared to commercially available narrow linewidth tunable lasers. To the best of our knowledge, this is the first experimental demonstration of a complete silicon photonic based coherent link. This is also the first experimental demonstration of >250 Gb/s coherent optical transmission using a silicon micro-ring-based tunable laser.

Phase coherence length in silicon photonic platform.

We report for the first time two typical phase coherence lengths in highly confined silicon waveguides fabricated in a standard CMOS foundry's multi-project-wafer shuttle run in the 220nm silicon-on-insulator wafer with 248nm lithography. By measuring the random phase fluctuations of 800 on-chip silicon Mach-Zehnder interferometers across the wafer, we extracted, with statistical significance, the coherence lengths to be 4.17 ± 0.42 mm and 1.61 ± 0.12 mm for single mode strip waveguide and rib waveguide, respectively. We present a new experimental method to quantify the phase coherence length. The theory model is verified by both our and others' experiments. Coherence length is expected to become one key parameter of the fabrication non-uniformity to guide the design of silicon photonics.

Symmetrical polarization splitter/rotator design and application in a polarization insensitive WDM receiver.

In integrated photonics, the design goal of a polarization splitter/rotator (PSR) has been separating the TE0 and TM0 modes in a waveguide. This is a natural choice. But in theory, a PSR only needs to project the incoming State Of Polarization (SOP) orthogonally to its output ports, using any orthogonal mode basis set in the fiber. In this article, we introduce a novel PSR design that alternatively takes the linear combination of TE0 and TM0 (TE0 +/- TM0) as orthogonal bases. By contrast, existing approaches exclusively use TE0 and TM0 as their basis set. The design is based on two symmetric and robust structures: a bi-layer taper and a Y-junction, and involves no bends. To prove the concept, we incorporated it into a four-channel polarization insensitive wavelength division multiplexing (PI-WDM) receiver fabricated in a standard CMOS Si photonics process. 40 Gb/s data rate and 0.7 +/- 0.2 dB polarization dependent loss (PDL) is demonstrated on each channel. Lastly, we propose an improved PSR design with 12 µm device length, < 0.1 dB PDL, < 0.4 dB insertion loss and < 0.05 dB wavelength dependence across C-band for both polarizations. Overall, our PSR design concept is simple, easy to realize and presents a new perspective for future PSR designs.

Silicon microring modulator for 40 Gb/s NRZ-OOK metro networks in O-band.

A microring-based silicon modulator operating at 40 Gb/s near 1310 nm is demonstrated for the first time to our knowledge. NRZ-OOK signals at 40 Gb/s with 6.2 dB extinction ratio are observed by applying a 4.8 Vpp driving voltage and biasing the modulator at 7 dB insertion loss point. The energy efficiency is 115 fJ/bit. The transmission performance of 40 Gb/s NRZ-OOK through 40 km of standard single mode fiber without dispersion compensation is also investigated. We show that the link suffers negligible dispersion penalty. This makes the modulator a potential candidate for metro network applications.

Design and optimization of a novel silicon-on-insulator wavelength diplexer.

We propose a novel silicon-on-insulator (SOI) wavelength diplexer design based on an adiabatic bent taper and an unconventional multimode waveguide. The geometry of the device is optimized using particle swarm optimization (PSO). The device has an ultra-short length of 15 µm. Simulated insertion loss at peak wavelength is less than 0.25 dB with 1-dB bandwidth around 100 nm for both O band and C band. The device is fabrication tolerant as demonstrated by simulated yield estimates. The reported design targets 1310 and 1550 nm as peak wavelengths; the design methodology is easily applicable to other wavelengths of interest.

Ultracompact silicon-on-insulator polarization rotator for polarization-diversified circuits.

We present an ultracompact (15.3 µm long) and high-efficiency silicon-on-insulator polarization rotator designed for polarization-diversified circuits. The rotator is comprised of a bilevel-tapered TM0-to-TE1 mode converter and a novel bent-tapered TE1-to-TE0 mode converter. The rotator has a simulated polarization conversion loss lower than 0.2 dB and a polarization-extinction ratio larger than 25 dB over a wavelength range of 80 nm around 1550 nm. The rotator has a SiO2 top-cladding and can be fabricated in a CMOS-compatible process.

Silicon Mod-MUX-Ring transmitter with 4 channels at 40 Gb/s.

We propose for the first time the Mod-MUX-Ring architecture for microring based WDM transmitter. A prototype Mod-MUX-Ring transmitter with 4 channels and 400 GHz channel spacing is demonstrated and fully characterized at 40 Gb/s channel rate. Under 2.7 V driving voltage, error-free (BER < 10(-12)) operation is achieved on all channels, with 3 dB extinction ratio. Performance comparisons to Lithium Niobate modulators are made.

Efficient, compact and low loss thermo-optic phase shifter in silicon.

We design a resistive heater optimized for efficient and low-loss optical phase modulation in a silicon-on-insulator (SOI) waveguide and characterize the fabricated devices. Modulation is achieved by flowing current perpendicular to a new ridge waveguide geometry. The resistance profile is engineered using different dopant concentrations to obtain localized heat generation and maximize the overlap between the optical mode and the high temperature regions of the structure, while simultaneously minimizing optical loss due to free-carrier absorption. A 61.6 µm long phase shifter was fabricated in a CMOS process with oxide cladding and two metal layers. The device features a phase-shifting efficiency of 24.77 ± 0.43 mW/π and a -3 dB modulation bandwidth of 130.0 ± 5.59 kHz; the insertion loss measured for 21 devices across an 8-inch wafer was only 0.23 ± 0.13 dB. Considering the prospect of densely integrated photonic circuits, we also quantify the separation necessary to isolate thermo-optic devices in the standard 220 nm SOI platform.

Ultralow loss single layer submicron silicon waveguide crossing for SOI optical interconnect.

We demonstrate compact, broadband, ultralow loss silicon waveguide crossings operating at 1550 nm and 1310 nm. Cross-wafer measurement of 30 dies shows transmission insertion loss of - 0.028 ± 0.009 dB for the 1550 nm device and - 0.017 ± 0.005 dB for the 1310 nm device. Both crossings show crosstalk lower than - 37 dB. The devices were fabricated in a CMOS-compatible process using 248 nm optical lithography with a single etch step.

Low power 50 Gb/s silicon traveling wave Mach-Zehnder modulator near 1300 nm.

The wavelength band near 1300 nm is attractive for many telecommunications applications, yet there are few results in silicon that demonstrate high-speed modulation in this band. We present the first silicon modulator to operate at 50 Gbps near 1300 nm. We demonstrate an open eye at this speed using a differential 1.5 V(pp) signal at 0 V reverse bias, achieving an energy efficiency of 450 fJ/bit.