Localized states in advanced dielectrics from the vantage of spin- and symmetry-polarized tunnelling across MgO.

Research on advanced materials such as multiferroic perovskites underscores promising applications, yet studies on these materials rarely address the impact of defects on the nominally expected materials property. Here, we revisit the comparatively simple oxide MgO as the model material system for spin-polarized solid-state tunnelling studies. We present a defect-mediated tunnelling potential landscape of localized states owing to explicitly identified defect species, against which we examine the bias and temperature dependence of magnetotransport. By mixing symmetry-resolved transport channels, a localized state may alter the effective barrier height for symmetry-resolved charge carriers, such that tunnelling magnetoresistance decreases most with increasing temperature when that state is addressed electrically. Thermal excitation promotes an occupancy switchover from the ground to the excited state of a defect, which impacts these magnetotransport characteristics. We thus resolve contradictions between experiment and theory in this otherwise canonical spintronics system, and propose a new perspective on defects in dielectrics.

Size-induced enhanced magnetoelectric effect and multiferroicity in chromium oxide nanoclusters.

The control of the magnetization of a material with an electric field would make the design and the integration of novel electronic devices possible. This explains the renewed interest in multiferroic materials. Progress in this field is currently hampered by the scarcity of the materials available and the smallness of the magnetoelectric effects. Here we present a proof-of-principle experiment showing that engineering large strains through nanoscale size reduction is an efficient route for increasing magnetoelectric coefficients by orders of magnitude. The archetype magnetoelectric material, Cr2O3, in the form of epitaxial clusters, exhibits an unprecedented 600% change in magnetization magnitude under 1 V. Furthermore, a multiferroic phase, with both magnetic and electric spontaneous polarizations, is found in the clusters, while absent in the bulk.

Heteronanojunctions with atomic size control using a lab-on-chip electrochemical approach with integrated microfluidics.

A versatile tool for electrochemical fabrication of heteronanojunctions with nanocontacts made of a few atoms and nanogaps of molecular spacing is presented. By integrating microfluidic circuitry in a lab-on-chip approach, we keep control of the electrochemical environment in the vicinity of the nanojunction and add new versatility for exchanging and controlling the junction's medium. Nanocontacts made of various materials by successive local controlled depositions are demonstrated, with electrical properties revealing sizes reaching a few atoms only. Investigations on benchmark molecular electronics material, trapped between electrodes, reveal the possibility to create nanogaps of size matching those of molecules. We illustrate the interest of a microfluidic approach by showing that exposure of a fabricated molecular junction to controlled high solvent flows can be used as a reliability criterion for the presence of molecular entities in a gap.

Nanotrench for nano and microparticle electrical interconnects.

We present a simple and versatile patterning procedure for the reliable and reproducible fabrication of high aspect ratio (10(4)) electrical interconnects that have separation distances down to 20 nm and lengths of several hundreds of microns. The process uses standard optical lithography techniques and allows parallel processing of many junctions, making it easily scalable and industrially relevant. We demonstrate the suitability of these nanotrenches as electrical interconnects for addressing micro and nanoparticles by realizing several circuits with integrated species. Furthermore, low impedance metal-metal low contacts are shown to be obtained when trapping a single metal-coated microsphere in the gap, emphasizing the intrinsic good electrical conductivity of the interconnects, even though a wet process is used. Highly resistive magnetite-based nanoparticles networks also demonstrate the advantage of the high aspect ratio of the nanotrenches for providing access to electrical properties of highly resistive materials, with leakage current levels below 1 pA.