Direct visualization of Rashba-split bands and spin/orbital-charge interconversion at KTaO3 interfaces.

Rashba interfaces have emerged as promising platforms for spin-charge interconversion through the direct and inverse Edelstein effects. Notably, oxide-based two-dimensional electron gases display a large and gate-tunable conversion efficiency, as determined by transport measurements. However, a direct visualization of the Rashba-split bands in oxide two-dimensional electron gases is lacking, which hampers an advanced understanding of their rich spin-orbit physics. Here, we investigate KTaO3 two-dimensional electron gases and evidence their Rashba-split bands using angle resolved photoemission spectroscopy. Fitting the bands with a tight-binding Hamiltonian, we extract the effective Rashba coefficient and bring insight into the complex multiorbital nature of the band structure. Our calculations reveal unconventional spin and orbital textures, showing compensation effects from quasi-degenerate band pairs which strongly depend on in-plane anisotropy. We compute the band-resolved spin and orbital Edelstein effects, and predict interconversion efficiencies exceeding those of other oxide two-dimensional electron gases. Finally, we suggest design rules for Rashba systems to optimize spin-charge interconversion performance.

From Low-Field Sondheimer Oscillations to High-Field Very Large and Linear Magnetoresistance in a SrTiO3-Based Two-Dimensional Electron Gas.

Quantum materials harbor a cornucopia of exotic transport phenomena challenging our understanding of condensed matter. Among these, a giant, nonsaturating linear magnetoresistance (MR) has been reported in various systems, from Weyl semimetals to topological insulators. Its origin is often ascribed to unusual band structure effects, but it may also be caused by extrinsic sample disorder. Here, we report a very large linear MR in a SrTiO3 two-dimensional electron gas and, by combining transport measurements with electron spectromicroscopy, show that it is caused by nanoscale inhomogeneities that are self-organized during sample growth. Our data also reveal semiclassical Sondheimer oscillations arising from interferences between helicoidal electron trajectories, from which we determine the 2DEG thickness. Our results bring insight into the origin of linear MR in quantum materials, expand the range of functionalities of oxide 2DEGs, and suggest exciting routes to explore the interaction of linear MR with features like Rashba spin-orbit coupling.

Spin-Charge Interconversion in KTaO3 2D Electron Gases.

Oxide interfaces exhibit a broad range of physical effects stemming from broken inversion symmetry. In particular, they can display non-reciprocal phenomena when time reversal symmetry is also broken, e.g., by the application of a magnetic field. Examples include the direct and inverse Edelstein effects (DEE, IEE) that allow the interconversion between spin currents and charge currents. The DEE and IEE have been investigated in interfaces based on the perovskite SrTiO3 (STO), albeit in separate studies focusing on one or the other. The demonstration of these effects remains mostly elusive in other oxide interface systems despite their blossoming in the last decade. Here, the observation of both the DEE and IEE in a new interfacial two-dimensional electron gas (2DEG) based on the perovskite oxide KTaO3 is reported. 2DEGs are generated by the simple deposition of Al metal onto KTaO3 single crystals, characterized by angle-resolved photoemission spectroscopy and magnetotransport, and shown to display the DEE through unidirectional magnetoresistance and the IEE by spin-pumping experiments. Their spin-charge interconversion efficiency is then compared with that of STO-based interfaces, related to the 2DEG electronic structure, and perspectives are given for the implementation of KTaO3 2DEGs into spin-orbitronic devices is compared.

Tuning spinterface properties in iron/fullerene thin films.

In ferromagnetic (FM) metal/organic semiconductor (OSC) heterostructures charge transfer can occur which leads to induction of magnetism in the non-magnetic OSC. This phenomenon has been described by the change in the density of states in the OSC which leads to a finite magnetic moment at the OSC interface and it is called the 'spinterface'. One of the main motivations in this field of organic spintronics is how to control the magnetic moment in the spinterface. In this regard, there are several open questions such as (i) which combination of FM and OSC can lead to more moment at the spinterface? (ii) Is the thickness of OSC also important? (iii) How does the spinterface moment vary with the FM thickness? (iv) Does the crystalline quality of the FM matter? (v) What is the effect of spinterface on magnetization reversal, domain structure and anisotropy? In this context, we have tried to answer the last four issues in this paper by studying Fe/C60 bilayers of variable Fe thickness deposited on Si substrates. We find that both the induced moment and thickness of the spinterface vary proportionally with the Fe thickness. Such behavior is explained in terms of the growth quality of the Fe layer on the native oxide of the Si (100) substrate. The magnetization reversal, domain structure and anisotropy of these bilayer samples were studied and compared with their respective reference samples without the C60 layer. It is observed that the formation of spinterface leads to a reduction in uniaxial anisotropy in Fe/C60 on Si (100) in comparison to their reference samples.

Effect of magnetic fullerene on magnetization reversal created at the Fe/C60 interface.

Probing the hybridized magnetic interface between organic semiconductor (OSC) and ferromagnetic (FM) layers has drawn significant attention in recent years because of their potential in spintronic applications. Recent studies demonstrate various aspects of organic spintronics such as magnetoresistance, induced interface moment etc. However, not much work has been performed to investigate the implications of such OSC/FM interfaces on the magnetization reversal and domain structure which are the utmost requirements for any applications. Here, we show that non-magnetic Fullerene can obtain non-negligible magnetic moment at the interface of Fe(15 nm)/C60(40 nm) bilayer. This leads to substantial effect on both the magnetic domain structure as well as the magnetization reversal when compared to a single layer of Fe(15 nm). This is corroborated by the polarized neutron reflectivity (PNR) data which indicates presence of hybridization at the interface by the reduction of magnetic moment in Fe. Afterwards, upto 1.9 nm of C60 near the interface exhibits magnetic moment. From the PNR measurements it was found that the magnetic C60 layer prefers to be aligned anti-parallel with the Fe layer at the remanant state. The later observation has been confirmed by domain imaging via magneto-optic Kerr microscopy.