Ultra-Wide Band Gap Ga2O3-on-SiC MOSFETs.

Ultra-wide band gap semiconductor devices based on ß-phase gallium oxide (Ga2O3) offer the potential to achieve higher switching performance and efficiency and lower manufacturing cost than that of today's wide band gap power electronics. However, the most critical challenge to the commercialization of Ga2O3 electronics is overheating, which impacts the device performance and reliability. We fabricated a Ga2O3/4H-SiC composite wafer using a fusion-bonding method. A low-temperature (≤600 °C) epitaxy and device processing scheme was developed to fabricate MOSFETs on the composite wafer. The low-temperature-grown epitaxial Ga2O3 devices deliver high thermal performance (56% reduction in channel temperature) and a power figure of merit of (∼300 MW/cm2), which is the highest among heterogeneously integrated Ga2O3 devices reported to date. Simulations calibrated based on thermal characterization results of the Ga2O3-on-SiC MOSFET reveal that a Ga2O3/diamond composite wafer with a reduced Ga2O3 thickness (∼1 µm) and a thinner bonding interlayer (<10 nm) can reduce the device thermal impedance to a level lower than that of today's GaN-on-SiC power switches.

Ga2O3-on-SiC Composite Wafer for Thermal Management of Ultrawide Bandgap Electronics.

ß-phase gallium oxide (Ga2O3) is an emerging ultrawide bandgap (UWBG) semiconductor (EG ∼ 4.8 eV), which promises generational improvements in the performance and manufacturing cost over today's commercial wide bandgap power electronics based on GaN and SiC. However, overheating has been identified as a major bottleneck to the performance and commercialization of Ga2O3 device technologies. In this work, a novel Ga2O3/4H-SiC composite wafer with high heat transfer performance and an epi-ready surface finish has been developed using a fusion-bonding method. By taking advantage of low-temperature metalorganic vapor phase epitaxy, a Ga2O3 epitaxial layer was successfully grown on the composite wafer while maintaining the structural integrity of the composite wafer without causing interface damage. An atomically smooth homoepitaxial film with a room-temperature Hall mobility of ∼94 cm2/Vs and a volume charge of ∼3 × 1017 cm-3 was achieved at a growth temperature of 600 °C. Phonon transport across the Ga2O3/4H-SiC interface has been studied using frequency-domain thermoreflectance and a differential steady-state thermoreflectance approach. Scanning transmission electron microscopy analysis suggests that phonon transport across the Ga2O3/4H-SiC interface is dominated by the thickness of the SiNx bonding layer and an unintentionally formed SiOx interlayer. Extrinsic effects that impact the thermal conductivity of the 6.5 µm thick Ga2O3 layer were studied via time-domain thermoreflectance. Thermal simulation was performed to estimate the improvement of the thermal performance of a hypothetical single-finger Ga2O3 metal-semiconductor field-effect transistor fabricated on the composite substrate. This novel power transistor topology resulted in a ∼4.3× reduction in the junction-to-package device thermal resistance. Furthermore, an even more pronounced cooling effect is demonstrated when the composite wafer is implemented into the device design of practical multifinger devices. These innovations in device-level thermal management give promise to the full exploitation of the promising benefits of the UWBG material, which will lead to significant improvements in the power density and efficiency of power electronics over current state-of-the-art commercial devices.

Accurate localization microscopy by intrinsic aberration calibration.

A standard paradigm of localization microscopy involves extension from two to three dimensions by engineering information into emitter images, and approximation of errors resulting from the field dependence of optical aberrations. We invert this standard paradigm, introducing the concept of fully exploiting the latent information of intrinsic aberrations by comprehensive calibration of an ordinary microscope, enabling accurate localization of single emitters in three dimensions throughout an ultrawide and deep field. To complete the extraction of spatial information from microscale bodies ranging from imaging substrates to microsystem technologies, we introduce a synergistic concept of the rigid transformation of the positions of multiple emitters in three dimensions, improving precision, testing accuracy, and yielding measurements in six degrees of freedom. Our study illuminates the challenge of aberration effects in localization microscopy, redefines the challenge as an opportunity for accurate, precise, and complete localization, and elucidates the performance and reliability of a complex microelectromechanical system.

Particle Tracking of Microelectromechanical System Performance and Reliability.

Microelectromechanical systems (MEMS) that require contact of moving parts to implement complex functions exhibit limits to their performance and reliability. Here, we advance our particle tracking method to measure MEMS motion in operando at nanometer, microradian, and millisecond scales. We test a torsional ratcheting actuator and observe dynamic behavior ranging from nearly perfect repeatability, to transient feedback and stiction, to terminal failure. This new measurement capability will help to understand and improve MEMS motion.

Subnanometer localization accuracy in widefield optical microscopy.

The common assumption that precision is the limit of accuracy in localization microscopy and the typical absence of comprehensive calibration of optical microscopes lead to a widespread issue-overconfidence in measurement results with nanoscale statistical uncertainties that can be invalid due to microscale systematic errors. In this article, we report a comprehensive solution to this underappreciated problem. We develop arrays of subresolution apertures into the first reference materials that enable localization errors approaching the atomic scale across a submillimeter field. We present novel methods for calibrating our microscope system using aperture arrays and develop aberration corrections that reach the precision limit of our reference materials. We correct and register localization data from multiple colors and test different sources of light emission with equal accuracy, indicating the general applicability of our reference materials and calibration methods. In a first application of our new measurement capability, we introduce the concept of critical-dimension localization microscopy, facilitating tests of nanofabrication processes and quality control of aperture arrays. In a second application, we apply these stable reference materials to answer open questions about the apparent instability of fluorescent nanoparticles that commonly serve as fiducial markers. Our study establishes a foundation for subnanometer localization accuracy in widefield optical microscopy.

Gravity-Based Characterization of Three-Axis Accelerometers in Terms of Intrinsic Accelerometer Parameters.

Cross-sensitivity matrices are used to translate the response of three-axis accelerometers into components of acceleration along the axes of a specified coordinate system. For inertial three-axis accelerometers, this coordinate system is often defined by the axes of a gimbal-based instrument that exposes the device to different acceleration inputs as the gimbal is rotated in the local gravitational field. Therefore, the cross-sensitivity matrix for a given three-axis accelerometer is not unique. Instead, it depends upon the orientation of the device when mounted on the gimbal. We define nine intrinsic parameters of three-axis accelerometers and describe how to measure them directly and how to calculate them from independently determined cross-sensitivity matrices. We propose that comparisons of the intrinsic parameters of three axis accelerometers that were calculated from independently determined cross-sensitivity matrices can be useful for comparisons of the cross-sensitivity-matrix measurement capability of different institutions because the intrinsic parameters will separate the accelerator-gimbal alignment differences among the participating institutions from the purely gimbal-related differences, such as gimbal-axis orthogonality errors, z-axis gravitational-field alignment errors, and angle-setting or angle-measurement errors.

Transfer of motion through a microelectromechanical linkage at nanometer and microradian scales.

Mechanical linkages are fundamentally important for the transfer of motion through assemblies of parts to perform work. Whereas their behavior in macroscale systems is well understood, there are open questions regarding the performance and reliability of linkages with moving parts in contact within microscale systems. Measurement challenges impede experimental studies to answer such questions. In this study, we develop a novel combination of optical microscopy methods that enable the first quantitative measurements at nanometer and microradian scales of the transfer of motion through a microelectromechanical linkage. We track surface features and fluorescent nanoparticles as optical indicators of the motion of the underlying parts of the microsystem. Empirical models allow precise characterization of the electrothermal actuation of the linkage. The transfer of motion between translating and rotating links can be nearly ideal, depending on the operating conditions. The coupling and decoupling of the links agree with an ideal kinematic model to within approximately 5%, and the rotational output is perfectly repeatable to within approximately 20 microradians. However, stiction can result in nonideal kinematics, and input noise on the scale of a few millivolts produces an asymmetric interaction of electrical noise and mechanical play that results in the nondeterministic transfer of motion. Our study establishes a new approach towards testing the performance and reliability of the transfer of motion through assemblies of microscale parts, opening the door to future studies of complex microsystems.

MEMS Young's Modulus and Step Height Measurements With Round Robin Results.

This paper presents the results of a microelectromechanical systems (MEMS) Young's modulus and step height round robin experiment, completed in April 2009, which compares Young's modulus and step height measurement results at a number of laboratories. The purpose of the round robin was to provide data for the precision and bias statements of two \ related Semiconductor Equipment and Materials International (SEMI) standard test methods for MEMS. The technical basis for the test methods on Young's modulus and step height measurements are also provided in this paper. Using the same test method, the goal of the round robin was to assess the repeatability of measurements at one laboratory, by the same operator, with the same equipment, in the shortest practical period of time as well as the reproducibility of measurements with independent data sets from unique combinations of measurement setups and researchers. Both the repeatability and reproducibility measurements were done on random test structures made of the same homogeneous material. The average repeatability Young's modulus value (as obtained from resonating oxide cantilevers) was 64.2 GPa with 95 % limits of ± 10.3 % and an average combined standard uncertainty value of 3.1 GPa. The average reproducibility Young's modulus value was 62.8 GPa with 95 % limits of ± 11.0 % and an average combined standard uncertainty value of 3.0 GPa. The average repeatability step height value (for a metal2-over-poly1 step from active area to field oxide) was 0.477 µm with 95 % limits of 7.9 % and an average combined standard uncertainty value of 0.014 µm. The average reproducibility step height value was 0.481 µm with 95 % limits of ± 6.2 % and an average combined standard uncertainty value of 0.014 µm. In summary, this paper demonstrates that a reliable methodology can be used to measure Young's modulus and step height. Furthermore, a micro and nano technology (MNT) 5-in-1 standard reference material (SRM) can be used by industry to compare their in-house measurements using this methodology with NIST measurements thereby validating their use of the documentary standards.