Tunable terahertz absorption of ion gel-graphene hybrids based on the Salisbury effect.

The gate-tunable absorption properties of graphene make it suitable for terahertz (THz) absorbers. However, the realization of a graphene-based THz absorber faces challenges between the difficulty of patterning graphene for processing and the intrinsically low absorbance of graphene with the high electric field needed to change the conductivity of graphene. This report presents an electrically tunable graphene THz absorber where a single-layer graphene film and a gold reflective layer are separated by a polyimide (PI) dielectric layer to form an easily fabricated three-layer Salisbury screen structure. The carrier density of the graphene layer can be efficiently tuned by a small external electrical gating (-5V-5 V) with the assistance of an ion gel layer. The voltage modulation of the Fermi energy level (EF) of graphene was confirmed by Raman spectra, and the variation of the device absorbance was confirmed using a THz time-domain spectroscopy system (THz-TDS). The measurements show that the EF is adjusted in the range of 0-0.5 eV, and THz absorbance is adjusted in the range of 60%-99%. The absorber performs well under different curvatures, and the peak absorbance is all over 95%. We conducted further analysis of the absorber absorbance by varying the thickness of the PI dielectric layer, aiming to examine the correlation between the resonant frequency of the absorber and the dielectric layer thickness. Our research findings indicate that the proposed absorber holds significant potential for application in diverse fields such as communication, medicine, and sensing.

Interfacial Polarization Control Engineering and Ferroelectric PZT/Graphene Heterostructure Integrated Application.

Integration and miniaturization are the inevitable trends in the development of electronic devices. PZT and graphene are typical ferroelectric and carbon-based materials, respectively, which have been widely used in various fields. Achieving high-quality PZT/graphene heterogeneous integration and systematically studying its electrical properties is of great significance. In this work, we reported the characterization of a PZT film based on the sol-gel method. Additionally, the thickness of the PZT film was pushed to the limit size (~100 nm) by optimizing the process. The test results, including the remnant and leakage current, show that the PZT film is a reliable and suitable platform for further graphene-integrated applications. The non-destructive regulation of the electrical properties of graphene has been studied based on a domain-polarized substrate and strain-polarized substrate. The domain structures in the PZT film exhibit different geometric structures with ~0.3 V surface potential. The I-V output curves of graphene integrated on the surface of the PZT film exhibited obvious rectification characteristics because of p/n-doping tuned by an interfacial polarized electric field. In contrast, a ~100 nm thick PZT film makes it easy to acquire a larger strain gradient for flexural potential. The tested results also show a rectification phenomenon, which is similar to domain polarization substrate regulation. Considering the difficulty of measuring the flexural potential, the work might provide a new approach to assessing the flexural polarized regulation effect. A thinner ferroelectric film/graphene heterojunction and the polarized regulation of graphene will provide a platform for promoting low-dimension film-integrated applications.

Graphene nanospacer layer modulated multilayer composite structures of precious metals and their SERS performance.

Graphene(G)-noble metal-ZnO hybrid systems were developed as highly sensitive and recyclable surface enhanced Raman scattering (SERS) platforms, in which ultrathin graphene of varying thickness was embedded between two metallic layers on top of a ZnO layer. Due to the multi-dimensional plasmonic coupling effect, the Au/G/Ag@ZnO multilayer structure possessed ultrahigh sensitivity with the detection limit of Rhodamine 6 G (R6G) as low as 1.0×10-13 mol/L and a high enhancement factor of 5.68×107. Both experimental and simulation results showed that graphene films could significantly regulate the interlayer plasmon resonance coupling strength, and single-layer graphene had the best interlayer regulation effect. Additionally, the SERS substrate structure prepared through physical methods exhibited high uniformity, the graphene component of the substrate possessed excellent molecular enrichment ability and silver oxidation inhibition characteristics, resulting in a substrate with high stability and exceptional reproducibility. The signal change was less than 15%. Simultaneously, due to the excellent photocatalytic performance of the low-cost and wide-band-gap semiconductor material ZnO, the SERS substrate exhibited exceptional reusability. Even after five cycles of adsorption-desorption, the SERS performance remained stable and maintained a reliable detection limit. The study introduced a novel approach to creating multilayer composite SERS substrates that exhibited exceptional performance, offering a new analytical tool with high sensitivity, stability, and reusability.

Multilayer graphene-enabled structure based on Salisbury shielding effect for high-performance terahertz absorption.

Sandwich-type structure based on Salisbury screen effect is a simple and effective strategy to acquire high-performance terahertz (THz) absorption. The number of sandwich layer is the key factor that affects the absorption bandwidth and intensity of THz wave. Traditional metal/insulant/metal (M/I/M) absorber is difficult to construct multilayer structure because of low light transmittance of the surface metal film. Graphene exhibits huge advantages including broadband light absorption, low sheet resistance and high optical transparency, which are useful for high-quality THz absorber. In this work, we proposed a series of multilayer metal/PI/graphene (M/PI/G) absorber based on graphene Salisbury shielding. Numerical simulation and experimental demonstration were provided to explain the mechanism of graphene as resistive film for strong electric field. And it is important to improve the overall absorption performance of the absorber. In addition, the number of resonance peaks is found to increase by increasing the thickness of the dielectric layer in this experiment. The absorption broadband of our device is around 160%, greater than those previously reported THz absorber. Finally, this experiment successfully prepared the absorber on a polyethylene terephthalate (PET) substrate. The absorber has high practical feasibility and can be easily integrated with the semiconductor technology to make high efficient THz-oriented devices.

Nanoelectromechanical Temperature Sensor Based on Piezoresistive Properties of Suspended Graphene Film.

The substrate impurities scattering will lead to unstable temperature-sensitive behavior and poor linearity in graphene temperature sensors. And this can be weakened by suspending the graphene structure. Herein, we report a graphene temperature sensing structure, with suspended graphene membranes fabricated on the cavity and non-cavity SiO2/Si substrate, using monolayer, few-layer, and multilayer graphene. The results show that the sensor provides direct electrical readout from temperature to resistance transduction by the nano piezoresistive effect in graphene. And the cavity structure can weaken the substrate impurity scattering and thermal resistance effect, which results in better sensitivity and wide-range temperature sensing. In addition, monolayer graphene is almost no temperature sensitivity. And the few-layer graphene temperature sensitivity, lower than that of the multilayer graphene cavity structure (3.50%/°C), is 1.07%/°C. This work demonstrates that piezoresistive in suspended graphene membranes can effectively enhance the sensitivity and widen the temperature sensor range in NEMS temperature sensors.

Solar Light Management Enabled by Dual-Responsive Smart Window.

Smart windows with tunable optical properties for energy-saving and privacy protection applications are receiving increasing attention. However, current studies of smart windows either involve the use of complex material preparation processes and complex device systems for window switching or continue to face several challenges, including low luminous transmittance, low luminous and solar modulation, and narrow wavelength range management problems. Here, we report a dual-responsive smart window that achieves solar light management in the range of 200-2500 nm. This smart window is fabricated by combining a reversible thermoresponsive hydrogel that acts as a thermochromic material with a ZnO/Ag/ZnO multilayer film that acts as a transparent heater. The as-prepared smart window can modulate solar light over a range from ultraviolet to infrared and achieves active responses to high-temperature weather, with passive responses being produced through electrical heating. The smart window shows high luminous transmittance (81.7%) and high luminous modulation (81.6%), together with an outstanding solar modulation performance (62.9%). In outdoor demonstrations, the as-prepared smart window exhibited a promising temperature regulation ability under strong solar irradiation. Therefore, the proposed smart window promises to provide a simple and effective energy management technology for buildings.

Modulation of graphene THz absorption based on HAuCl4 doping method.

Graphene is an attractive material for terahertz (THz) absorbers because of its tunable Fermi-Level (EF). It has become a research hotspot to modulate the EF of graphene and THz absorption of graphene. Here, a sandwich-structured single layer graphene (SLG)/ Polyimide (PI)/Au THz absorber was proposed, and top-layer graphene was doped by HAuCl4 solutions. The EF of graphene was shifted by HAuCl4 doping, which was characterized by scanning electron microscope (SEM), X-ray photoelectron spectroscopy (XPS), and Raman tests. The results showed that the EF is shifted about 0.42 eV under 100 mM HAuCl4 doping, the sheet resistance is reduced from 1065 Ω/sq (undoped) to 375 Ω/sq (100 mM). The corresponding absorbance was increased from 40% to 80% at 0.65 THz and increased from 50% to 90% at 2.0 THz under 100 mM HAuCl4 doping. Detailed studies showed that the absorption came from a sandwich structure that meets the impedance matching requirements and provided a thin resonant cavity to capture the incident THz waves. In addition, not only the absorber can be prepared simply, but its results in experiments and simulations agree as well. The proposed device can be applied to electromagnetic shielding and imaging, and the proposed method can be applied to prepare other graphene-based devices.

Three-Dimensional Dendritic Au-Ag Substrate for On-Site SERS Detection of Trace Molecules in Liquid Phase.

The development of a facile surface-enhanced Raman scattering (SERS) sensor for the on-site detection of trace molecules in liquid phase is a compelling need. In this paper, a three-dimensional (3D) dendritic Au-Ag nanostructure was constructed by a two-step electro displacement reaction in a capillary tube for the on-site liquid phase detection of trace molecules. The multiplasmon resonance mechanism of the dendritic Au-Ag structure was simulated using the finite-difference time domain (FDTD) method. It was confirmed that the highly branched 3D structure promoted the formation of high-density "hot spots" and interacted with the gold nanoparticles at the dendrite tip, gap, and surface to maximize the spatial electric field, which allowed for high signal intensification to be observed. More importantly, the unique structure of the capillary made it possible to achieve the on-site detection of trace molecules in liquids. Using Rhodamine 6G (R6G) solution as a model molecule, the 3D dendritic Au-Ag substrate exhibited a high detection sensitivity (10-13 mol/L). Furthermore, the developed sensor was applied to the detection of antibacterial agents, ciprofloxacin (CIP), with clear Raman characteristic peaks observed even at concentrations as low as 10-9 mol/L. The results demonstrated that the 3D dendritic Au-Ag sensor could successfully realize the rapid on-site SERS detection of trace molecules in liquids, providing a promising platform for ultrasensitive and on-site liquid sample analysis.

Influence of Structural Parameters on Performance of SAW Resonators Based on 128° YX LiNbO3 Single Crystal.

The seeking of resonator with high Q and low insertion loss is attractive for critical sensing scenes based on the surface acoustic wave (SAW). In this work, 128° YX LiNbO3-based SAW resonators were utilized to optimize the output performance through IDT structure parameters. Once the pairs of IDTs, the acoustic aperture, the reflecting grid logarithm, and the gap between IDT and reflector are changed, a better resonance frequency of 224.85 MHz and a high Q of 1364.5 were obtained. All the results demonstrate the structure parameters design is helpful for the performance enhancement with regard to SAW resonators, especially for designing and fabricating high-Q devices.

Integration Technology for Wafer-Level LiNbO3 Single-Crystal Thin Film on Silicon by Polyimide Adhesive Bonding and Chemical Mechanical Polishing.

An integration technology for wafer-level LiNbO3 single-crystal thin film on Si has been achieved. The optimized spin-coating speed of PI (polyimide) adhesive is 3500 rad/min. According to Fourier infrared analysis of the chemical state of the film baked under different conditions, a high-quality PI film that can be used for wafer-level bonding is obtained. A high bonding strength of 11.38 MPa is obtained by a tensile machine. The bonding interface is uniform, completed and non-porous. After the PI adhesive bonding process, the LiNbO3 single-crystal was lapped by chemical mechanical polishing. The thickness of the 100 mm diameter LiNbO3 can be decreased from 500 to 10 µm without generating serious cracks. A defect-free and tight bonding interface was confirmed by scanning electron microscopy. X-ray diffraction results show that the prepared LiNbO3 single-crystal thin film has a highly crystalline quality. Heterogeneous integration of LiNbO3 single-crystal thin film on Si is of great significance to the fabrication of MEMS devices for in-situ measurement of space-sensing signals.

Reliable Fabrication of Graphene Nanostructure Based on e-Beam Irradiation of PMMA/Copper Composite Structure.

Graphene nanostructures are widely perceived as a promising material for fundamental components; their high-performance electronic properties offer the potential for the construction of graphene nanoelectronics. Numerous researchers have paid attention to the fabrication of graphene nanostructures, based on both top-down and bottom-up approaches. However, there are still some unavoidable challenges, such as smooth edges, uniform films without folds, and accurate dimension and location control. In this work, a direct writing method was reported for the in-situ preparation of a high-resolution graphene nanostructure of controllable size (the minimum feature size is about 15 nm), which combines the advantages of e-beam lithography and copper-catalyzed growth. By using the Fourier infrared absorption test, we found that the hydrogen and oxygen elements were disappearing due to knock-on displacement and the radiolysis effect. The graphene crystal is also formed via diffusion and the local heating effect between the e-beam and copper substrate, based on the Raman spectra test. This simple process for the in-situ synthesis of graphene nanostructures has many promising potential applications, including offering a way to make nanoelectrodes, NEMS cantilever resonant structures, nanophotonic devices and so on.

The Wafer-Level Integration of Single-Crystal LiNbO3 on Silicon via Polyimide Material.

In situ measurements of sensing signals in space platforms requires that the micro-electro-mechanical system (MEMS) sensors be located directly at the point to be measured and in contact with the subject to be measured. Traditional radiation-tolerant silicon-based MEMS sensors cannot acquire spatial signals directly. Compared to silicon-based structures, LiNbO3 single crystalline has wide application prospects in the aerospace field owing to its excellent corrosion resistance, low-temperature resistance and radiation resistance. In our work, 4-inch LiNbO3 and LiNbO3/Cr/Au wafers are fabricated to silicon substrate by means of a polyimide bonding method, respectively. The low-temperature bonding process (≤100 °C) is also useful for heterostructure to avoid wafer fragmentation results from a coefficient of thermal expansion (CTE) mismatch. The hydrophilic polyimide surfaces result from the increasing of -OH groups were acquired based on contact angle and X-ray photoelectron spectroscopy characterizations. A tight and defect-free bonding interface was confirmed by scanning electron microscopy. More importantly, benefiting from low-temperature tolerance and radiation-hardened properties of polyimide material, the bonding strength of the heterostructure based on oxygen plasma activation achieved 6.582 MPa and 3.339 MPa corresponding to room temperature and ultra-low temperature (≈ -263.15 °C), which meets the bonding strength requirements of aerospace applications.