1.
Adv Mater
; 25(23): 3187-91, 2013 Jun 18.
Artículo
en Inglés
| MEDLINE
| ID: mdl-23637063
RESUMEN
Through metal-assisted chemical etching (MaCE), superior purification of dirty Si is observed, from 99.74 to 99.9884% for metallurgical Si and from 99.999772 to 99.999899% for upgraded metallurgical Si. In addition, large area of silicon nanowires (SiNW) are fabricated. The purification effect induces a â¼35% increase in photocurrent for SiNW based photoelectrochemical cell.