Strain-Sensor-In-Pixel Technology for Resolution-Sustainable Stretchable Displays.

One of the limitations of stretchable displays is the severe degradation of resolution or the decrease in the number of pixels per unit area when stretched. Hence, we suggest a strain-sensor-in-pixel (S-SIP) system through the adoption of hidden pixels that are activated only during the stretch mode for maintaining the density of on-state pixels. For the S-SIP system, the gate and source electrodes of InGaZnO thin-film transistors (TFTs) in an existing pixel are connected to a resistive strain sensor through the facile and selective deposition of silver nanowires (AgNWs) via electrohydrodynamic-jet-printing. With this approach, the strain sensor integrated TFT functions as a strain-triggered switch, which responds only to stretching along the designated axes by finely tuning the orientation and cycles of AgNW printing. The strain sensor-integrated TFT remains in an off-state when unstretched and switches to an on-state when stretched, exhibiting a large negative gauge factor of -1.1 × 1010 and a superior mechanical stability enduring 6000 cycles, which enables the efficient structure to operate hidden pixels without requiring additional signal processing. Furthermore, the stable operation of the S-SIP in a 5 × 5-pixel array is demonstrated via circuit simulation, implying the outstanding applicability and process compatibility to the conventional active-matrix display backplanes.

Strain-Driven Negative Resistance Switching of Conductive Fibers with Adjustable Sensitivity for Wearable Healthcare Monitoring Systems with Near-Zero Standby Power.

Recently, one of the primary concerns in e-textile-based healthcare monitoring systems for chronic illness patients has been reducing wasted power consumption, as the system should be always-on to capture diverse biochemical and physiological characteristics. However, the general conductive fibers, a major component of the existing wearable monitoring systems, have a positive gauge-factor (GF) that increases electrical resistance when stretched, so that the systems have no choice but to consume power continuously. Herein, a twisted conductive-fiber-based negatively responsive switch-type (NRS) strain-sensor with an extremely high negative GF (resistance change ratio ≈ 3.9 × 108 ) that can significantly increase its conductivity from insulating to conducting properties is developed. To this end, a precision cracking technology is devised, which could induce a difference in the Young's modulus of the encapsulated layer on the fiber through selective ultraviolet-irradiation treatment. Owing to this technology, the NRS strain-sensors can allow for effective regulation of the mutual contact resistance under tensile strain while maintaining superior durability for over 5000 stretching cycles. For further practical demonstrations, three healthcare monitoring systems (E-fitness pants, smart-masks, and posture correction T-shirts) with near-zero standby power are also developed, which opens up advancements in electronic textiles by expanding the utilization range of fiber strain-sensors.

Ultrathin Crystalline Silicon Nano and Micro Membranes with High Areal Density for Low-Cost Flexible Electronics.

Ultrathin crystalline silicon is widely used as an active material for high-performance, flexible, and stretchable electronics, from simple passive and active components to complex integrated circuits, due to its excellent electrical and mechanical properties. However, in contrast to conventional silicon wafer-based devices, ultrathin crystalline silicon-based electronics require an expensive and rather complicated fabrication process. Although silicon-on-insulator (SOI) wafers are commonly used to obtain a single layer of crystalline silicon, they are costly and difficult to process. Therefore, as an alternative to SOI wafers-based thin layers, here, a simple transfer method is proposed for printing ultrathin multiple crystalline silicon sheets with thicknesses between 300 nm to 13 µm and high areal density (>90%) from a single mother wafer. Theoretically, the silicon nano/micro membrane can be generated until the mother wafer is completely consumed. In addition, the electronic applications of silicon membranes are successfully demonstrated through the fabrication of a flexible solar cell and flexible NMOS transistor arrays.

Mechanically Durable Organic/High-k Inorganic Hybrid Gate Dielectrics Enabled by Plasma-Polymerization of PTFE for Flexible Electronics.

To achieve both the synergistic advantages of outstanding flexibility in organic dielectrics and remarkable dielectric/insulating properties in inorganic dielectrics, a plasma-polymerized hafnium oxide (HfOx) hybrid (PPH-hybrid) dielectric is proposed. Using a radio-frequency magnetron cosputtering process, the high-k HfOx dielectric is plasma-polymerized with polytetrafluoroethylene (PTFE), which is a flexible, thermally stable, and hydrophobic fluoropolymer dielectric. The PPH-hybrid dielectric with a high dielectric constant of 14.17 exhibits excellent flexibility, maintaining a leakage current density of ∼10-8 A/cm2 even after repetitive bending stress (up to 10000 bending cycles with a radius of 2 mm), whereas the HfOx dielectric degrades to be leaky. To evaluate its practical applicability to flexible thin-film transistors (TFTs), the PPH-hybrid dielectric is applied to amorphous indium-gallium-zinc oxide (IGZO) TFTs as a gate dielectric. Consequently, the PPH-hybrid dielectric-based IGZO TFTs exhibit stable electrical performance under the same harsh bending cycles: a field-effect mobility of 16.99 cm2/(V s), an on/off current ratio of 1.15 × 108, a subthreshold swing of 0.35 V/dec, and a threshold voltage of 0.96 V (averaged in nine devices). Moreover, the PPH-hybrid dielectric-based IGZO TFTs exhibit a reduced I-V hysteresis and an enhanced positive bias stress stability, with the threshold voltage shift decreasing from 4.99 to 1.74 V, due to fluorine incorporation. These results demonstrate that PTFE improves both the mechanical durability and electrical stability, indicating that the PPH-hybrid dielectric is a promising candidate for high-performance and low-power flexible electronics.

Modulation of the Al/Cu2O Schottky Barrier Height for p-Type Oxide TFTs Using a Polyethylenimine Interlayer.

We introduced an organic interlayer into the Schottky contact interface to control the contact property. After inserting an 11-nm-thick polyethylenimine (PEI) interlayer between the aluminum (Al) source/drain electrode and the cuprous oxide (Cu2O) channel layer, the Cu2O thin-film transistors (TFTs) exhibited improved electrical characteristics compared with Cu2O TFTs without a PEI interlayer; the field-effect mobility improved from 0.02 to 0.12 cm2/V s, the subthreshold swing decreased from 14.82 to 7.34 V/dec, and the on/off current ratio increased from 2.43 × 102 to 1.47 × 103, respectively. Careful investigation of the contact interface between the source/drain electrode and the channel layer established that the performance improvements were caused by the formation of electric dipoles in the PEI interlayer. These electric dipoles reduced the Schottky barrier height by neutralizing the charges at the metal/oxide semiconductor interface, and the holes passed the reduced Schottky barrier by means of tunneling or thermionic injection. In this way, p-type oxide TFTs, which generally need a noble metal having a high work function as an electrode, were demonstrated with a low-work-function metal. As a basic application for logic circuits, a complementary inverter based on n-type indium-gallium-zinc oxide and p-type Cu2O TFTs was fabricated using only Al source/drain electrodes. This research achieved advances in low-cost circuit design by broadening the electrode metals available for the manufacture of p-type oxide semiconductor-based electronics.

Switching Enhancement via a Back-Channel Phase-Controlling Layer for p-Type Copper Oxide Thin-Film Transistors.

P-type copper oxide (CuxO) thin-film transistors (TFTs) with enhanced switching characteristics were fabricated by introducing a sputter-processed capping layer capable of controlling the back-channel phase (labeled as phase-controlling layer, PCL). By optimizing the processing conditions (the deposition power and postdeposition annealing parameters), the switching characteristics of the TFTs achieved a subthreshold swing of 0.11 V dec-1, an on/off current ratio (Ion/Ioff) of 2.81 × 108, and a field-effect mobility (µFET) of 0.75 cm2 V-1 s-1, a considerable enhancement in performance compared to that of CuxO TFTs without the PCL. Through optical/electrical analyses and technology computer-aided design simulations, we determined that the performance improvements were because of the CuxO back-channel phase reconstruction through PCL deposition and subsequent annealing. The two factors that occurred during the process, sputtering damage and heat treatment, played key roles in creating the phase reconstruction by inducing a local phase transition that sharply reduced the off-current via controlling back-channel hole conduction. As a sample application, we fabricated a complementary metal oxide semiconductor inverter based on our optimized CuxO TFT and an InGaZnO TFT that demonstrated a large inverter voltage gain of >14. The proposed approach opens up advancements in low-power circuit design by expanding the utilization range of oxide TFTs.

Suppression of colonic aberrant crypt foci by soy isoflavones is dose-independent in dimethylhydrazine-treated rats.

The potential of soy isoflavones (SIs) to reduce colon cancer has been investigated in animal models. These studies have found that outcomes are variable and depend on SI dose. The present study investigated dose-response effects of SIs on colon carcinogenesis in a chemically induced rat cancer model. Sprague-Dawley male rats were injected with 1,2-dimethylhydrazine (DMH) and were provided experimental diets that contained 0, 10, 50, 150, or 500 mg of SI aglycones/kg of diet for 12 weeks. Plasma concentrations of genistein, daidzein, and equol were determined using time-resolved fluoroimmunoassay. Plasma concentrations of these SIs tended to increase in a dose-dependent manner in DMH-treated rats. The numbers of aberrant crypt foci (ACF) and the expression of cyclooxygenase-2 (COX-2) proteins of colons were significantly decreased in the SI-fed groups compared with the control group; however, suppression was not dose-dependent. Furthermore, there were no significant correlations between plasma SI concentrations and ACF or COX-2 expression. Increased SI intake and increased plasma levels of SIs and metabolites were not associated with tissue levels of lipid peroxidation. We conclude that dietary supplementation of SIs suppresses DMH-induced ACF formation and COX-2 expression in a dose-independent manner.