RESUMEN
Developing Si compatible optical sources has attracted a great deal of attention owing to the potential for forming inexpensive, monolithic Si-based integrated devices. In this Letter, we show that ultra broadband near-IR (NIR) luminescence in the optical telecommunication window of silica optical fibers was obtained for Bi-doped silicon-rich silica films prepared by a co-sputtering method. Without excess Si, i.e., Bi-doped pure silica films, no luminescence was observed in the NIR range. A broad Bi-related NIR photoluminescence appears when excess Si was doped in the Bi-doped silica. The luminescence properties depended strongly on the amount of excess Si and the annealing temperature. Photoluminescence results suggest that excess Si acts as an agent to activate Bi NIR luminescence centers and also as an energy donor to transfer excitation energy to the centers. It is believed that this peculiar structure might find some important applications in Si photonics.
RESUMEN
Nd-Bi codoped zeolites were prepared by an ion-exchange process, and the optical properties were investigated by photoluminescence (PL) and PL excitation spectra, and decay time measurements. The results show that the NIR emission of Nd(3+) ions is significantly enhanced by the introduction of bismuth in codoped samples, and the lifetime reaches 246 µs. It is also observed that NIR-active Bi acts as a sensitizer of Nd(3+) ions. The energy transfer efficiency is also estimated. The peculiar optical properties make Nd-Bi codoped zeolites promising for potential application in biological probes.
RESUMEN
We show that sensitized superbroadband near-IR (NIR) emission in bismuth glass/Si nanocrystal superlattices can be realized. Photoluminescence is enhanced by 1 order of magnitude in this structure. We observed that the excitation wavelength dependence of the NIR emission does not show any distinct structure corresponding to the direct transition of bismuth IR-active centers. Our results suggest that the enhanced emission might result from the energy transfer from Si nanocrystals to IR-active bismuth. This structure may find broad applications for broadband amplifiers and broadly tunable laser sources.
RESUMEN
Ultrabroadband near-IR (NIR) emission has been realized in bismuth-embedded sodalite nanocrystals. Steady-state and time-resolved photoluminescence and Raman results suggest that Bi(+) active centers contribute to the NIR emission. This study demonstrates that sodalite nanocrystals can serve as excellent hosts for bismuth NIR active centers, thus paving the way for their wide applications in nanophotonics.
RESUMEN
We have shown that tunable and highly efficient broadband near-IR (NIR) luminescence can be realized in erbium/bismuth codoped zeolites. The emission covers the ranges of 930-1450nm and 1450-1630nm. The intensity ratio of the two bands can be tuned by adjusting the concentration of erbium and the excitation wavelength. Steady-state and time-resolved photoluminescence (PL), and PL excitation measurements indicate that two kinds of emitters coexist in the pores of zeolites, and that NIR active bismuth simultaneously acts as a sensitizer of erbium. The present results demonstrate an important rational strategy for the design of a tunable NIR-emitting zeolite-based nanosystem.
RESUMEN
We have shown that efficient superbroadband near-IR luminescence can be realized in bismuth-doped high-silica nanocrystalline zeolites. The emission band covered the range of 930-1620 nm, with a maximum peak at 1146.3 nm, an FWHM of 152 nm, and a lifetime of over 300 mus under the excitation of a 488 nm laser line. The observed luminescence was attributed to subvalent Bi (Bi(+)) ions formed in the annealed zeolites. These Bi-doped nanozeolites may find applications as superbroadband near-IR nano-optical sources.