Transparent and flexible resistive switching memory devices with a very high ON/OFF ratio using gold nanoparticles embedded in a silk protein matrix.

The growing demand for biomaterials for electrical and optical devices is motivated by the need to make building blocks for the next generation of printable bio-electronic devices. In this study, transparent and flexible resistive memory devices with a very high ON/OFF ratio incorporating gold nanoparticles into the Bombyx mori silk protein fibroin biopolymer are demonstrated. The novel electronic memory effect is based on filamentary switching, which leads to the occurrence of bistable states with an ON=OFF ratio larger than six orders of magnitude. The mechanism of this process is attributed to the formation of conductive filaments through silk fibroin and gold nanoparticles in the nanocomposite. The proposed hybrid bio-inorganic devices show promise for use in future flexible and transparent nanoelectronic systems.

CdS-decorated ZnO nanorod heterostructures for improved hybrid photovoltaic devices.

Cadmium sulfide (CdS)-decorated zinc oxide (ZnO) nanorod heterostructures have been grown by a combination of hydrothermal and pulsed laser deposition techniques. Hybrid photovoltaic devices have been fabricated with CdS modified and unmodified ZnO nanorods blended separately with regioregular poly(3-hexylthiophene) (P3HT) polymer as the active layer. The solar cell performance has been studied as a function of ZnO concentration and the casting solvent (chlorobenzene, chloroform, and toluene) in the unmodified ZnO:P3HT devices. The power conversion efficiency is found to be enhanced with the increase of ZnO concentration up to a certain limit, and decreases at a very high concentration. The surface modification of ZnO nanorods with CdS leads to an increase in the open circuit voltage and short-circuit current, with enhanced efficiency by 300% over the unmodified ZnO:P3HT device, because of the cascaded band structure favoring charge transfer to the external circuit.