Resonantly enhanced lumped-element O-band Mach-Zehnder modulator with an ultra-wide operating wavelength range.

We demonstrate an O-band resonantly enhanced Mach-Zehnder modulator utilizing highly overcoupled resonators with staggered resonance wavelengths that achieves an operating range of 6.6 nm (7.1 nm) with a 1 dB (3 dB) optical modulation amplitude penalty. It can be operated in a power-efficient lumped-element configuration without any tuning of the resonators in an extended temperature range of 80°C.

8-channel WDM silicon photonics transceiver with SOA and semiconductor mode-locked laser.

We demonstrate an integrated 8 by 14 Gbps dense wavelength division multiplexed silicon photonics transceiver that makes use of an external mode-locked laser as a light source and a single semiconductor optical amplifier for post-modulation signal amplification. Remaining components necessary for modulation, filtering and (de­)multiplexing are monolithically integrated in a single chip. In all system experiments, all eight channels are jointly operated with independent data streams in order to include impairments arising out of nonlinear effects inside the SOA while benchmarking the system performance. The transmitter, measured with a commercial reference receiver, supports on-off keying data transmission with an uncorrected BER ranging between 1e-5 and 5e-7 for all channels in back-to-back configuration and between 8e-4 and 1e-5 after 10 km transmission (both PRBS 231-1). The three best channels of the full link consisting in the silicon photonics transmitter operated with the silicon photonics receiver in back-to-back configuration maintain a BER better than the targeted 5e-5. Based on link budget modeling, we expect this target to be reached for all 8 channels pending improvement of the receiver offset compensation loop.

High-Q inverted silica microtoroid resonators monolithically integrated into a silicon photonics platform.

We report on the monolithic integration of a new class of reflown silica microtoroid resonators with silicon nanowaveguides fabricated on top of the silica film. Connectivity with other silicon photonics devices is enabled by inversion of the toroid geometry, defined by etching a circular opening rather than a disk in an undercut silica membrane. Intrinsic quality factors of up to 2 million are achieved and several avenues of process improvement are identified that can help attain the higher quality factors (> 108) that are possible in reflown microtoroids. Moreover, due to the microtoroid being formed by standard microfabrication and post-processing by local laser induced heating, these devices are in principle compatible with monolithic co-fabrication with other electro-optic components.

Wideband multi-stage CROW filters with relaxed fabrication tolerances.

We present wideband and large free spectral range optical filters with steep passband edges for the selection of adjacent WDM communication channels that can be reliably fabricated with mainstream silicon photonics technology. The devices are based on three cascaded stages of coupled resonator optical waveguides loaded on a common bus waveguide. These stages differ in the number of resonators but are implemented with exactly identical unit cells, comprised of a matched racetrack resonator layout and a uniform spacing between cells. The different number of resonators in each stage allows a high rejection in the through port response enabled by the interleaved distribution of zeros. Furthermore, the exact replication of a unique cell avoids the passband ripple and high lobes in the stopband that typically arise in apodized coupled resonator optical waveguide based filters due to fabrication and coupling induced variations in the effective path length of each resonator. Silicon photonics filters designed for the selection of 9 adjacent optical carriers generated by a 100 GHz free spectral range comb laser have been successfully fabricated with 248 nm DUV lithography, achieving an out-of-band rejection above 11 dB and an insertion loss of less than 0.5 dB for the worst channels.

Silicon Photonics Transmitter with SOA and Semiconductor Mode-Locked Laser.

We experimentally investigate an optical link relying on silicon photonics transmitter and receiver components as well as a single section semiconductor mode-locked laser as a light source and a semiconductor optical amplifier for signal amplification. A transmitter based on a silicon photonics resonant ring modulator, an external single section mode-locked laser and an external semiconductor optical amplifier operated together with a standard receiver reliably supports 14 Gbps on-off keying signaling with a signal quality factor better than 7 for 8 consecutive comb lines, as well as 25 Gbps signaling with a signal quality factor better than 7 for one isolated comb line, both without forward error correction. Resonant ring modulators and Germanium waveguide photodetectors are further hybridly integrated with chip scale driver and receiver electronics, and their co-operability tested. These experiments will serve as the basis for assessing the feasibility of a silicon photonics wavelength division multiplexed link relying on a single section mode-locked laser as a multi-carrier light source.

Calibrated Link Budget of a Silicon Photonics WDM Transceiver with SOA and Semiconductor Mode-Locked Laser.

Based on the single channel characterization of a Silicon Photonics (SiP) transceiver with Semiconductor Optical Amplifier (SOA) and semiconductor Mode-Locked Laser (MLL), we evaluate the optical power budget of a corresponding Wavelength Division Multiplexed (WDM) link in which penalties associated to multi-channel operation and the management of polarization diversity are introduced. In particular, channel cross-talk as well as Cross Gain Modulation (XGM) and Four Wave Mixing (FWM) inside the SOA are taken into account. Based on these link budget models, the technology is expected to support up to 12 multiplexed channels without channel pre-emphasis or equalization. Forward Error Correction (FEC) does not appear to be required at 14 Gbps if the SOA is maintained at 25 °C and MLL-to-SiP as well as SiP-to-SOA interface losses can be maintained below 3 dB. In semi-cooled operation with an SOA temperature below 55 °C, multi-channel operation is expected to be compatible with standard 802.3bj Reed-Solomon FEC at 14 Gbps provided interface losses are maintained below 4.5 dB. With these interface losses and some improvements to the Transmitter (Tx) and Receiver (Rx) electronics, 25 Gbps multi-channel operation is expected to be compatible with 7% overhead hard decision FEC.

High-speed resonantly enhanced silicon photonics modulator with a large operating temperature range.

We present a novel resonant Mach-Zehnder modulator whose arms are each loaded with five identical resonators. Size and power consumption are aggressively reduced compared to conventional modulators based on linear phase shifters. At the same time, a large optical bandwidth of 3.8 nm is maintained. We experimentally demonstrate open eye diagrams at 30 Gbps with a signal Q-factor remaining within a factor of 2 of its peak value in an operational temperature range spanning 55°C.

Low V(π) Silicon photonics modulators with highly linear epitaxially grown phase shifters.

We report on the design of Silicon Mach-Zehnder carrier depletion modulators relying on epitaxially grown vertical junction diodes. Unprecedented spatial control over doping profiles resulting from combining local ion implantation with epitaxial overgrowth enables highly linear phase shifters with high modulation efficiency and comparatively low insertion losses. A high average phase shifter efficiency of VπL = 0.74 V⋅cm is reached between 0 V and 2 V reverse bias, while maintaining optical losses at 4.2 dB/mm and the intrinsic RC cutoff frequency at 48 GHz (both at 1 V reverse bias). The fabrication process, the sensitivity to fabrication tolerances, the phase shifter performance and examples of lumped element and travelling wave modulators are modeled in detail. Device linearity is shown to be sufficient to support complex modulation formats such as 16-QAM.