New Schottky-Type Wire-Based Solar Cell with NiSix Nanowire Contacts.

Solar cells built with arrays of semiconductor wires have been studied for several years. They present some potential advantages over their bulk counterparts, such as (much) less use of semiconductor material, as well as improved light absorption properties. Most wire-based solar cells are fabricated with arrays of semiconductor p-n junctions, either radial or axial. Here, using a newly developed random connection process based on nickel silicide nanowires, we have built Schottky-type solar cells on interdigitated base and emitter coplanar electrodes that reach an efficiency of 6.5% when only 64% of the footprint area of the device is covered with p-type Si wire light-absorbers. To the best of our knowledge, this is the best efficiency reported so far for a Schottky-type wire-based solar cell; a simple extrapolation of the surface area suggests that an efficiency of more than 10% can be reached, which is comparable to that of single-junction hydrogenated amorphous Si cells. We also compare the Schottky-type cell with a "control" p-i-n one using the same device layout and the same nickel silicide nanowire random connection process: the efficiency of the p-i-n cell is higher (∼8%) but this is due to a higher VOC, the short-circuit current density (ISC) being very similar in both cases, close to 20 mA/cm2. The maximum temperature reached throughout the fabrication process of the cells (whether Schottky-type or p-i-n) is 550 °C, corresponding to the growth of the crystalline Si wires. Altogether, the results presented here hold promises toward cheap photovoltaics based on the use of randomly organized and randomly connected Si wire arrays.

Surface Engineering of Room Temperature-Grown Inorganic Perovskite Quantum Dots for Highly Efficient Inverted Light-Emitting Diodes.

Inorganic cesium lead bromide quantum dots (CsPbBr3 QDs) are usually synthesized via a high-temperature process (hot injection, HI). This process is similar to that used for the synthesis of other semiconductor QDs (i.e., CdSe@ZnS), which limits their potential cost advantage. CsPbBr3 QDs can also be synthesized at room temperature (RT) in a low cost and easily scalable process, which, thus, is one of the greatest advantages of the CsPbBr3 QDs. However, light-emitting diodes (LEDs) fabricated using RT-QDs exhibit poor performance compared to those of HI-QDs. In fact, QDs are surrounded by insulating ligands to maintain their colloidal stability but these ligands need to be removed to obtain high-performance LEDs. Here, we show that ligand removal techniques used for HI-QDs are not sufficient in the case of RT-QDs. Additional ligand engineering and annealing steps are necessary to remove the excess of ligands from RT-QD films while preventing the coalescence of the QDs. The eventual surface defects induced by annealing can be healed by a subsequent photoactivation step. Moreover, the use of solution processable inorganic charge transport layers can reduce the fabrication costs of LEDs. We fabricated an inverted LED based on a metal oxide electron transport layer and a RT-QD emitting layer which exhibited a maximum current efficiency of 17.61 cd A-1 and a maximum luminance of 22 825 cd m-2.

Graphene-Coated Aluminum Thin Film Anodes for Lithium-Ion Batteries.

We present a detailed study on graphene-coated aluminum thin films for Li-ion battery anode applications. The best electrode ageing behavior is obtained for Al films encapsulated with four porous graphene layers. Graphene encapsulation prevents "crushed" Al nanoparticles from detaching from the anode, thus allowing prolonged charge-discharge cycling. Graphene also provides surface conduction paths for electrons as well as diffusion paths for Li atoms. For the first time, we report the electrochemical room temperature formation of phases such as Li3Al2 and even Li9Al4, with a higher Li content than ß-LiAl. More interestingly, we observe a progressive change of the composite thin film electrode, switching from a pure galvanic to a pseudocapacitive behavior as the size of the Al grains decreases from ∼100 to 5-10 nm due to repeated Li alloying-dealloying. The capacity values of ∼900 and 780 mAh/g are obtained after, respectively, 500 and 1000 charge-discharge cycles at 0.1C. Our results may refocus the interest of the battery community on Al-based thin film anodes, since they are potentially very simple to fabricate, particularly if porous graphene is replaced in the future by reduced graphite oxide.

Rubidium as an Alternative Cation for Efficient Perovskite Light-Emitting Diodes.

Incorporation of rubidium (Rb) into mixed lead halide perovskites has recently achieved record power conversion efficiency and excellent stability in perovskite solar cells. Inspired by these tremendous advances in photovoltaics, this study demonstrates the impact of Rb incorporation into MAPbBr3-based light emitters. Rb partially substitutes MA (methyl ammonium), resulting in a mixed cation perovskite with the formula MA(1- x)Rb xPbBr3. Pure MAPbBr3 crystallizes into a polycrystalline layer with highly defective sub-micrometer grains. However, the addition of a small amount of Rb forms MA(1- x)Rb xPbBr3 nanocrystals (10 nm) embedded in an amorphous matrix of MA/Rb Br. These nanocrystals grow into defect-free sub-micrometer-sized crystallites with further addition of Rb, resulting in a 3-fold increase in exciton lifetime when the molar ratio of MABr/RbBr is 1:1. A thin film fabricated with a 1:1 molar ratio of MABr/RbBr showed the best electroluminescent properties with a current efficiency (CE) of 9.45 cd/A and a luminance of 7694 cd/m2. These values of CE and luminance are, respectively, 19 and 10 times larger than those achieved by pure MAPbBr3 devices (0.5 cd/A and 790 cd/m2). We believe this work provides important information on the future compositional optimization of Rb+-based mixed cation perovskites for obtaining high-performance light-emitting diodes.

Ligand removal and photo-activation of CsPbBr3 quantum dots for enhanced optoelectronic devices.

Perovskite quantum dots have recently emerged as a promising light source for optoelectronic applications. However, integrating them into devices while preserving their outstanding optical properties remains challenging. Due to their ionic nature, perovskite quantum dots are extremely sensitive and degrade on applying the simplest processes. To maintain their colloidal stability, they are surrounded by organic ligands; these prevent efficient charge carrier injection in devices and have to be removed. Here we report on a simple method, where a moderate thermal process followed by exposure to UV in air can efficiently remove ligands and increase the photo-luminescence of the room temperature synthesized perovskite quantum dot thin films. Annealing is accompanied by a red shift of the emission wavelength, usually attributed to the coalescence and irreversible degradation of the quantum dots. We show that it is actually related to the relaxation of the quantum dots upon the ligand removal, without the creation of non-radiative recombining defects. The quantum dot surface, as devoid of ligands, is subsequently photo-oxidized and smoothened upon exposure to UV in air, which drastically enhances their photo-luminescence. This adequate combination of treatments improves by more than an order of magnitude the performances of perovskite quantum dot light emitting diodes.

Publisher's Note: Si Nanoribbons on Ag(110) Studied by Grazing-Incidence X-Ray Diffraction, Scanning Tunneling Microscopy, and Density-Functional Theory: Evidence of a Pentamer Chain Structure [Phys. Rev. Lett. 117, 276102 (2016)].

This corrects the article DOI: 10.1103/PhysRevLett.117.276102.

Nanostructured conducting polymers for stiffness controlled cell adhesion.

We propose a facile and reproducible method, based on ultra thin porous alumina membranes, to produce cm(2) ordered arrays of nano-pores and nano-pillars on any kind of substrates. In particular our method enables the fabrication of conducting polymers nano-structures, such as poly[3,4-ethylenedioxythiophene]:poly[styrene sulfonate] ( PEDOT: PSS). Here, we demonstrate the potential interest of those templates with controlled cell adhesion studies. The triggering of the eventual fate of the cell (proliferation, death, differentiation or migration) is mediated through chemical cues from the adsorbed proteins and physical cues such as surface energy, stiffness and topography. Interestingly, as well as through material properties, stiffness modifications can be induced by nano-topography, the ability of nano-pillars to bend defining an effective stiffness. By controlling the diameter, length, depth and material of the nano-structures, one can possibly tune the effective stiffness of a (nano) structured substrate. First results indicate a possible change in the fate of living cells on such nano-patterned devices, whether they are made of conducting polymer (soft material) or silicon (hard material).

Si Nanoribbons on Ag(110) Studied by Grazing-Incidence X-Ray Diffraction, Scanning Tunneling Microscopy, and Density-Functional Theory: Evidence of a Pentamer Chain Structure.

We report a combined grazing incidence x-ray diffraction (GIXD), scanning tunneling microscopy (STM), and density-functional theory (DFT) study which clearly elucidates the atomic structure of the Si nanoribbons grown on the missing-row reconstructed Ag(110) surface. Our study allows us to discriminate between the theoretical models published in the literature, including the most stable atomic configurations and those based on a missing-row reconstructed Ag(110) surface. GIXD measurements unambiguously validate the pentamer model grown on the reconstructed surface, obtained from DFT. This pentamer atomistic model accurately matches the high-resolution STM images of the Si nanoribbons adsorbed on Ag(110). Our study closes the long-debated atomic structure of the Si nanoribbons grown on Ag(110) and definitively excludes a honeycomb structure similar to that of freestanding silicene.

Significant enhancement of the electrical transport properties of graphene films by controlling the surface roughness of Cu foils before and during chemical vapor deposition.

We have studied the influence of the surface roughness of copper foils on the sheet resistance of graphene sheets grown by chemical vapor deposition. The surface roughness of the copper foils was reproducibly controlled by electropolishing. We have found that the graphene sheet resistance monotonically decreases as the surface roughness of the copper foils decreases. We show that a pre-annealing treatment combined with an optimized electropolishing process of the Cu foils and a fast CVD growth prevents the evolution of the Cu surface roughness during graphene synthesis. This combination of fabrication conditions produces small grain polycrystalline graphene films with a sheet resistance of 210 Ω â–¡(-1) and carrier mobility values as high as 5450 cm(2) V(-1) s(-1) after transfer onto SiO2/Si.

Clinical review: medication errors in critical care.

Medication errors in critical care are frequent, serious, and predictable. Critically ill patients are prescribed twice as many medications as patients outside of the intensive care unit (ICU) and nearly all will suffer a potentially life-threatening error at some point during their stay. The aim of this article is to provide a basic review of medication errors in the ICU, identify risk factors for medication errors, and suggest strategies to prevent errors and manage their consequences.