RESUMEN
Monolayers of transition metal dichalcogenides (TMDs) in the 2H structural phase have been recently classified as higher-order topological insulators (HOTIs), protected by C_{3} rotation symmetry. In addition, theoretical calculations show an orbital Hall plateau in the insulating gap of TMDs, characterized by an orbital Chern number. We explore the correlation between these two phenomena in TMD monolayers in two structural phases: the noncentrosymmetric 2H and the centrosymmetric 1T. Using density functional theory, we confirm the characteristics of 2H TMDs and reveal that 1T TMDs are identified by a Z_{4} topological invariant. As a result, when cut along appropriate directions, they host conducting edge states, which cross their bulk energy-band gaps and can transport orbital angular momentum. Our linear response calculations thus indicate that the HOTI phase is accompanied by an orbital Hall effect. Using general symmetry arguments, we establish a connection between the two phenomena with potential implications for orbitronics and spin orbitronics.
RESUMEN
It has been recently shown that monolayers of transition metal dichalcogenides (TMDs) in the 2H structural phase exhibit relatively large orbital Hall conductivity plateaus within their energy band gaps, where their spin Hall conductivities vanish [Canonico et al., Phys. Rev. B 101, 161409 (2020)PRBMDO2469-995010.1103/PhysRevB.101.161409; Bhowal and Satpathy, Phys. Rev. B 102, 035409 (2020)PRBMDO2469-995010.1103/PhysRevB.102.035409]. However, since the valley Hall effect (VHE) in these systems also generates a transverse flow of orbital angular momentum, it becomes experimentally challenging to distinguish between the two effects in these materials. The VHE requires inversion symmetry breaking to occur, which takes place in the TMD monolayers but not in the bilayers. We show that a bilayer of 2H-MoS_{2} is an orbital Hall insulator that exhibits a sizeable orbital Hall effect in the absence of both spin and valley Hall effects. This phase can be characterized by an orbital Chern number that assumes the value C_{L}=2 for the 2H-MoS_{2} bilayer and C_{L}=1 for the monolayer, confirming the topological nature of these orbital-Hall insulator systems. Our results are based on density functional theory and low-energy effective model calculations and strongly suggest that bilayers of TMDs are highly suitable platforms for direct observation of the orbital Hall insulating phase in two-dimensional materials. Implications of our findings for attempts to observe the VHE in TMD bilayers are also discussed.
RESUMEN
The fabrication of bismuthene on top of SiC paved the way for substrate engineering of room temperature quantum spin Hall insulators made of group V atoms. We perform large-scale quantum transport calculations in these two-dimensional (2D) materials to analyze the rich phenomenology that arises from the interplay between topology, disorder, valley, and spin degrees of freedom. For this purpose, we consider a minimal multiorbital real-space tight-binding Hamiltonian and use a Chebyshev polynomial expansion technique. We discuss how the quantum spin Hall states are affected by disorder, sublattice resolved potential, and Rashba spin-orbit coupling. It is also shown that these materials can be driven to a topological Anderson insulator phase by sufficiently strong disorder.
RESUMEN
Ultrathin films of ß-tungsten provide very promising substrates for applications in spintronics, and the possibility of incorporating them into multilayers extends such expectations. Our calculations indicate that it is viable to deposit a single layer of Mn on two non-equivalent (0 0 1) surfaces of ß-tungsten that have easy axes along orthogonal directions [0 1 0] and [1 0 0], respectively. The ferromagnetic structure of this Mn monolayer adsorbed to either of those surfaces displays a giant in-plane magneto-crystalline anisotropy that exceeds 12 meV per Mn atom. Furthermore, when coated with additional layers of ß-tungsten the magnetization easy axis becomes perpendicular to the planes. We envisage that magnetic multilayers involving mono-crystalline thin films of ß-tungsten oriented along high-symmetry directions offer a very fruitful playground for spintronic applications.
RESUMEN
In spintronics, the ability to transport magnetic information often depends on the existence of a spin current traveling between two different magnetic objects acting as the source and probe. A large fraction of this information never reaches the probe and is lost because the spin current tends to travel omnidirectionally. We propose that a curved boundary between a gated and a non-gated region within graphene acts as an ideal lens for spin currents despite being entirely of non-magnetic nature. We show as a proof of concept that such lenses can be utilized to redirect the spin current that travels away from a source onto a focus region where a magnetic probe is located, saving a considerable fraction of the magnetic information that would be otherwise lost.
RESUMEN
Within time-dependent density functional theory, combined with the Korringa-Kohn-Rostoker Green functions, we devise a real space method to investigate spin dynamics. Our scheme enables one to deduce the Coulomb potential which assures a proper Goldstone mode is present. We illustrate with application to 3d adatoms and dimers on Cu(100).
RESUMEN
We present model studies of the ground state for magnetic dimers on metal surfaces. We find it can be neither ferromagnetic nor antiferromagnetic, but is often canted for nearest neighbors. Thus, the system cannot be described using bilinear exchange. We give a criterion which can be used quite generally to interrogate the local stability of ferromagnetically or antiferromagnetically aligned dimers, and which also may be used to infer the canting angle when canted states are stable.
RESUMEN
Resection arthroplasty of the trapezium with either Gelfoam (Upjohn Co., Kalamazoo, Michigan) or tendon interposition was performed in 28 thumbs. Postoperatively, all thumbs were stable and all patients noted diminished pain and improvement in strength. Adduction contracture and metacarpophalangeal joint hyperextension must be corrected at the time of surgery. Interposition arthroplasty of the trapeziometacarpal joint accomplishes the surgical objectives and obviates the need for an implant. Subsequently, the rare complication of silicone synovitis following implant surgery is avoided.
