RESUMEN
A simple technique is introduced for measuring the refractive index of plane-parallel samples having thickness of the order of a millimeter. The refractive index values are reported for six bulk semiconductors, each index measured at two infrared wavelengths using this method. The values are found to be within a few percent of those in literature for four semiconductors. The other two semiconductors were newly grown ternary alloys (CdMgTe and CdMnTe), for which the refractive index values have not been reported previously at the wavelengths studied here.
RESUMEN
Nonlinear absorption at 1.064 and 1.535 microm wavelengths by two photon and free carrier absorption processes in undoped and Fe doped InP has been investigated. Using picosecond and nanosecond duration lasers, a self-consistent set of the two photon and free carrier absorption coefficients are experimentally obtained through nonlinear transmission measurements for the first time. Reduced carrier recombination lifetime caused a decrease in nonlinear absorption of nanosecond duration laser pulses in Fe doped samples.