Watt-level continuous-wave antimonide laser diodes with high carrier-confined active region above 2.5 µm.

Thanks to high performance above room temperature, antimonide laser diodes have shown great potential for broad application in the mid-infrared spectral region. However, the laser`s performance noticeably deteriorates due to the reduction of carrier confinement with increased emission wavelength. In this paper, a novel active region with higher carrier confinements both of electron and hole, by the usage of an indirect bandgap material of Al0.5GaAs0.04Sb as the quantum barrier, was put up to address the poor carrier confinement of GaSb-based type-I multi-quantum-well (MQW) diode lasers emission wavelength above 2.5 µm. The carrier confinement and the differential gain in the designed active region are enhanced as a result of the first proposed usage of an indirect-gap semiconductor as the quantum barrier with larger band offsets in conduction and valence bands, leading to high internal quantum efficiency and low threshold current density of our lasers. More importantly, the watt-level output optical power is obtained at a low injection current compared to the state of the art. Our work demonstrates a direct and cost-effective solution to address the poor carrier confinement of the GaSb-based MQW lasers, thereby achieving high-power mid-infrared lasers.

Robust design of mid-infrared GaSb-based single-mode laser diode fabricated by standard photolithography with socketed ridge-waveguide modulation.

In this paper, we put up a robust design of a stable single-mode-operated GaSb-based laser diode emitting around 1950nm. This novel design structure with socketed ridge-waveguide enables a simple fabrication and batch production of mid-infrared laser diodes on account of the mere usage of standard photolithography. By introducing micron-level index perturbations distributed along the ridge waveguide, the threshold gains of different FP modes are modulated. Four geometrical parameters of the perturbations are systematically optimized by analyzing the reflection spectrum to get a robust single-mode characteristic. Based on the optimized geometrical parameters, 1-mm long uncoated lasers are carried out and exhibit a stable single longitudinal mode from 10 °C to 40 °C with a maximum output power of more than 10 mW. Thus, we prove the feasibility of the standard photolithography to manufacture the monolithic single-mode infrared laser source without regrowth process or nanoscale lithography.

Annealing-Modulated Surface Reconstruction for Self-Assembly of High-Density Uniform InAs/GaAs Quantum Dots on Large Wafers Substrate.

In this work, we developed pre-grown annealing to form ß2 reconstruction sites among ß or α (2 × 4) reconstruction phase to promote nucleation for high-density, size/wafer-uniform, photoluminescence (PL)-optimal InAs quantum dot (QD) growth on a large GaAs wafer. Using this, the QD density reached 580 (860) µm-2 at a room-temperature (T) spectral FWHM of 34 (41) meV at the wafer center (and surrounding) (high-rate low-T growth). The smallest FWHM reached 23.6 (24.9) meV at a density of 190 (260) µm-2 (low-rate high-T). The mediate rate formed uniform QDs in the traditional ß phase, at a density of 320 (400) µm-2 and a spectral FWHM of 28 (34) meV, while size-diverse QDs formed in ß2 at a spectral FWHM of 92 (68) meV and a density of 370 (440) µm-2. From atomic-force-microscope QD height distribution and T-dependent PL spectroscopy, it is found that compared to the dense QDs grown in ß phase (mediate rate, 320 µm-2) with the most large dots (240 µm-2), the dense QDs grown in ß2 phase (580 µm-2) show many small dots with inter-dot coupling in favor of unsaturated filling and high injection to large dots for PL. The controllable annealing (T, duration) forms ß2 or ß2-mixed α or ß phase in favor of a wafer-uniform dot island and the faster T change enables optimal T for QD growth.

Controllable spin-resolved photon emission enhanced by a slow-light mode in photonic crystal waveguides on a chip.

We report the slow-light enhanced spin-resolved in-plane emission from a single quantum dot (QD) in a photonic crystal waveguide (PCW). The slow light dispersions in PCWs are designed to match the emission wavelengths of single QDs. The resonance between two spin states emitted from a single QD and a slow light mode of a waveguide is investigated under a magnetic field with Faraday configuration. Two spin states of a single QD experience different degrees of enhancement as their emission wavelengths are shifted by combining diamagnetic and Zeeman effects with an optical excitation power control. A circular polarization degree up to 0.81 is achieved by changing the off-resonant excitation power. Strongly polarized photon emission enhanced by a slow light mode shows great potential to attain controllable spin-resolved photon sources for integrated optical quantum networks on chip.

Bright semiconductor single-photon sources pumped by heterogeneously integrated micropillar lasers with electrical injections.

The emerging hybrid integrated quantum photonics combines the advantages of different functional components into a single chip to meet the stringent requirements for quantum information processing. Despite the tremendous progress in hybrid integrations of III-V quantum emitters with silicon-based photonic circuits and superconducting single-photon detectors, on-chip optical excitations of quantum emitters via miniaturized lasers towards single-photon sources (SPSs) with low power consumptions, small device footprints, and excellent coherence properties is highly desirable yet illusive. In this work, we present realizations of bright semiconductor SPSs heterogeneously integrated with on-chip electrically-injected microlasers. Different from previous one-by-one transfer printing technique implemented in hybrid quantum dot (QD) photonic devices, multiple deterministically coupled QD-circular Bragg Grating (CBG) SPSs were integrated with electrically-injected micropillar lasers at one time via a potentially scalable transfer printing process assisted by the wide-field photoluminescence (PL) imaging technique. Optically pumped by electrically-injected microlasers, pure single photons are generated with a high-brightness of a count rate of 3.8 M/s and an extraction efficiency of 25.44%. Such a high-brightness is due to the enhancement by the cavity mode of the CBG, which is confirmed by a Purcell factor of 2.5. Our work provides a powerful tool for advancing hybrid integrated quantum photonics in general and boosts the developments for realizing highly-compact, energy-efficient and coherent SPSs in particular.

High-performance infrared photodetectors based on InAs/InAsSb/AlAsSb superlattice for 3.5†µm cutoff wavelength spectra.

High-performance infrared p-i-n photodetectors based on InAs/InAsSb/AlAsSb superlattices on GaSb substrate have been demonstrated at 300K. These photodetectors exhibit 50% and 100% cut-off wavelength of ∼3.2 µm and ∼3.5 µm, respectively. Under -130 mV bias voltage, the device exhibits a peak responsivity of 0.56 A/W, corresponding to a quantum efficiency (QE) of 28%. The dark current density at 0 mV and -130 mV bias voltage are 8.17 × 10-2 A/cm2 and 5.02 × 10-1 A/cm2, respectively. The device exhibits a saturated dark current shot noise limited specific detectivity (D*) of 3.43 × 109 cm·Hz1/2/W (at a peak responsivity of 2.5 µm) under -130 mV of applied bias.

Terahertz cavity optomechanics using a topological nanophononic superlattice.

Cavity optomechanical systems operating at the quantum ground state provide a novel way for the ultrasensitive measurement of mass and displacement and provide a new toolbox for emerging quantum information technologies. The high-frequency optomechanical devices could reach the quantum ground state at a high temperature because the access to high frequency is favorable for the cavity optomechanical devices to decouple from the thermal environment. However, reaching ultra-high frequency (THz) is extremely difficult due to the structure of cavity optomechanical devices and properties of materials. In this paper, by introducing acoustic topological interface states, we designed a THz mechanical frequency semiconductor pillar microcavity optomechanical device based on a GaAs/AlAs nanophononic superlattice. In the optomechanical system, multi-optical cavity modes are obtained and the frequency separation between adjacent optical modes is equal to the frequency of the mechanical mode (optomechanical frequency matching). By detuning the laser pump to a lower (higher) energy-resolved sideband to make a spontaneously scattering photon doubly resonate with optical cavity modes at an anti-Stokes (Stokes) frequency and pump frequency, we can achieve an anti-Stokes (Stokes) scattering efficiency 2600 (1800) times larger than that of Stokes (anti-Stokes) scattering, which provides potential for laser cooling and low threshold phonon lasing in the optomechanical system.

Single- and Twin-Photons Emitted from Fiber-Coupled Quantum Dots in a Distributed Bragg Reflector Cavity.

In this work, we develop single-mode fiber devices of an InAs/GaAs quantum dot (QD) by bonding a fiber array with large smooth facet, small core, and small numerical aperture to QDs in a distributed Bragg reflector planar cavity with vertical light extraction that prove mode overlap and efficient output for plug-and-play stable use and extensive study. Modulated Si doping as electron reservoir builds electric field and level tunnel coupling to reduce fine-structure splitting (FSS) and populate dominant XX and higher excitons XX+ and XXX. Epoxy package thermal stress induces light hole (lh) with various behaviors related to the donor field: lh h1 confined with more anisotropy shows an additional XZ line (its space to the traditional X lines reflects the field intensity) and larger FSS; lh h2 delocalized to wetting layer shows a fast h2-h1 decay; lh h2 confined shows D3h symmetric higher excitons with slow h2-h1 decay and more confined h1 to raise h1-h1 Coulomb interaction.

Tailoring solid-state single-photon sources with stimulated emissions.

The coherent interaction of electromagnetic fields with solid-state two-level systems can yield deterministic quantum light sources for photonic quantum technologies. To date, the performance of semiconductor single-photon sources based on three-level systems is limited mainly due to a lack of high photon indistinguishability. Here we tailor the cavity-enhanced spontaneous emission from a ladder-type three-level system in a single epitaxial quantum dot through stimulated emission. After populating the biexciton (XX) of the quantum dot through two-photon resonant excitation, we use another laser pulse to selectively depopulate the XX state into an exciton (X) state with a predefined polarization. The stimulated XX-X emission modifies the X decay dynamics and improves the characteristics of a polarized single-photon source, such as a source brightness of 0.030(2), a single-photon purity of 0.998(1) and an indistinguishability of 0.926(4). Our method can be readily applied to existing quantum dot single-photon sources and expands the capabilities of three-level systems for advanced quantum photonic functionalities.

Optimization and robustness of the topological corner state in second-order topological photonic crystals.

The second-order topological photonic crystal with the 0D corner state provides a new way to investigate cavity quantum electrodynamics and develop topological nanophotonic devices with diverse functionalities. Here, we report on the optimization and robustness of the topological corner state in the second-order topological photonic crystal both in theory and in experiment. The topological nanocavity is formed based on the 2D generalized Su-Schrieffer-Heeger model. The quality factor of the corner state is optimized theoretically and experimentally by changing the gap between two photonic crystals or just modulating the position or size of the airholes surrounding the corner. The fabricated quality factors are further optimized by the surface passivation treatment which reduces surface absorption. A maximum quality factor of the fabricated devices is about 6000, which is the highest value ever reported for the active topological corner state. Furthermore, we demonstrate the robustness of the corner state against strong disorders including the bulk defect, edge defect, and even corner defect. Our results lay a solid foundation for further investigations and applications of the topological corner state, such as the investigation of a strong coupling regime and the development of optical devices for topological nanophotonic circuitry.

Wet-Etched Microlens Array for 200 nm Spatial Isolation of Epitaxial Single QDs and 80 nm Broadband Enhancement of Their Quantum Light Extraction.

Uniform arrays of three shapes (gauss, hat, and peak) of GaAs microlenses (MLs) by wet-etching are demonstrated, ∼200 nm spatial isolation of epitaxial single QDs embedded (λ: 890-990 nm) and broadband (Δλ∼80 nm) enhancement of their quantum light extraction are obtained, which is also suitable for telecom-band epitaxial QDs. Combined with the bottom distributed Bragg reflector, the hat-shaped ML forms a cavity and achieves the best enhancement: extraction efficiency of 26%, Purcell factor of 2 and single-photon count rate of 7×106 counts per second at the first lens; while the gauss-shaped ML shows a broader band (e.g., longer λ) enhancement. In the MLs, single QDs with featured exciton emissions are observed, whose time correlations prove single-photon emission with multi-photon probability g(2)(0)=0.02; some QDs show both biexciton XX and exciton X emissions and exhibit a perfect cascade feature. This work could pave a step towards a scalable array of QD single-photon sources and the application of QD photon-pair emission for entanglement experiments.

Self-Induced Dark States in Two-Dimensional Excitons.

We have obtained an ultralong lifetime exciton emission in InAs/GaAs single quantum dots (QDs) when the QD films are transferred onto the Si substrate covered by Ag nanoparticles. It is found that when the separation distance from the QD layer (also the wetting layer) to the Ag nanoparticles is around 19 nm, the QD emission lifetime changes from approximately 1 to 2000 ns. A classical dipole oscillator model is used to quantitatively calculate the spontaneous radiation decay rate of the excitons in the wetting layer (WL), and the simulated calculation result is in good agreement with the experimental one, revealing that the long lifetime exciton emission is due to the existence of the dark state in the WL. The self-induced dark state stems from the destructive interference between the exciton emission field and the induced dipole field of the Ag nanoparticles.

Boost of single-photon emission by perfect coupling of InAs/GaAs quantum dot and micropillar cavity mode.

We proposed a precise calibration process of Al 0.9Ga0.1As/GaAs DBR micropillar cavity to match the single InAs/GaAs quantum dot (QD) exciton emission and achieve cavity mode resonance and a great enhancement of QD photoluminescence (PL) intensity. Light-matter interaction of single QD in DBR micropillar cavity (Q ∼ 3800) under weak coupling regime was investigated by temperature-tuned PL spectra; a pronounced enhancement (14.6-fold) of QD exciton emission was observed on resonance. The second-order autocorrelation measurement shows g(2)(0)=0.070, and the estimated net count rate before the first objective lens reaches 1.6×107 counts/s under continuous wave excitation, indicating highly pure single-photon emission at high count rates.

Low-threshold topological nanolasers based on the second-order corner state.

Topological lasers are immune to imperfections and disorder. They have been recently demonstrated based on many kinds of robust edge states, which are mostly at the microscale. The realization of 2D on-chip topological nanolasers with a small footprint, a low threshold and high energy efficiency has yet to be explored. Here, we report the first experimental demonstration of a topological nanolaser with high performance in a 2D photonic crystal slab. A topological nanocavity is formed utilizing the Wannier-type 0D corner state. Lasing behaviour with a low threshold of approximately 1 µW and a high spontaneous emission coupling factor of 0.25 is observed with quantum dots as the active material. Such performance is much better than that of topological edge lasers and comparable to that of conventional photonic crystal nanolasers. Our experimental demonstration of a low-threshold topological nanolaser will be of great significance to the development of topological nanophotonic circuitry for the manipulation of photons in classical and quantum regimes.

Elimination of Bimodal Size in InAs/GaAs Quantum Dots for Preparation of 1.3-µm Quantum Dot Lasers.

The device characteristics of semiconductor quantum dot lasers have been improved with progress in active layer structures. Self-assembly formed InAs quantum dots grown on GaAs had been intensively promoted in order to achieve quantum dot lasers with superior device performances. In the process of growing high-density InAs/GaAs quantum dots, bimodal size occurs due to large mismatch and other factors. The bimodal size in the InAs/GaAs quantum dot system is eliminated by the method of high-temperature annealing and optimized the in situ annealing temperature. The annealing temperature is taken as the key optimization parameters, and the optimal annealing temperature of 680 °C was obtained. In this process, quantum dot growth temperature, InAs deposition, and arsenic (As) pressure are optimized to improve quantum dot quality and emission wavelength. A 1.3-µm high-performance F-P quantum dot laser with a threshold current density of 110 A/cm2 was demonstrated.

Structural discontinuity induced surface second harmonic generation in single, thin zinc-blende GaAs nanowires.

We investigate optical second harmonic generation (SHG) from individual self-catalyzed zinc-blende (ZB) GaAs nanowires (NWs), where the polarimetry strongly depends on the NW diameter. We report a direct observation on the SHG induced by surface nonlinear susceptibilities in a single, ultra-thin GaAs NW. By considering the contributions from both optical field and structural discontinuities in our theoretical model, we can well explain the optical SHG polarimetry from NWs with different diameters. We also show that the optical in-coupling coefficient arising from the depolarization electromagnetic field can determine the polarization of the SHG. The results open perspectives for further geometry-based studies on the origin and control of SHG in small nanostructures.

A deterministic quantum dot micropillar single photon source with >65% extraction efficiency based on fluorescence imaging method.

We report optical positioning of single quantum dots (QDs) in planar distributed Bragg reflector (DBR) cavity with an average position uncertainty of ≈20 nm using an optimized photoluminescence imaging method. We create single-photon sources based on these QDs in determined micropillar cavities. The brightness of the QD fluorescence is greatly enhanced on resonance with the fundamental mode of the cavity, leading to an high extraction efficiency of 68% ± 6% into a lens with numerical aperture of 0.65, and simultaneously exhibiting low multi-photon probability (g(2)(0) = 0.144 ± 0.012) at this collection efficiency.

Quantum efficiency optimization by maximizing wave function overlap in type-II superlattice photodetectors.

Quantum efficiency (QE) is a crucial parameter that determines the final performance of photodetector devices. Herein, by fitting the charge distribution fluctuation under a series of bias voltages, revealed by groups of in situ electron holography experiments, a simple model based on modulus square of wave function (MSWF) is qualitatively built to shed new light on the relationship between QE and wave function overlap (WFO). It is found that there exists a competition of WFO between the potential well regions and the interface regions, and a peak value of the overall WFO can be obtained under an appropriate voltage. On combining such competition with the measured QE results from actual infrared photodetectors, the positive correlation between QE and WFO is manifested, and the QE can be boosted to 51% from 34%. Our results offer a new perspective to the understanding of the carrier transportation within superlattice (SL) structures and the design on photoelectric devices with enhanced performance.

Precise characterization of self-catalyzed III-V nanowire heterostructures via optical second harmonic generation.

We demonstrate the utility of optical second harmonic generation (SHG) polarimetry to perform structural characterization of self-assembled zinc-blende/wurtzite III-V nanowire heterostructures. By analyzing four anisotropic SHG polarimetric patterns, we distinguish between wurtzite (WZ), zinc-blende (ZB) and ZB/WZ mixing III-V semiconducting crystal structures in nanowire systems. By neglecting the surface contributions and treating the bulk crystal within the quasi-static approximation, we can well explain the optical SHG polarimetry from the NWs with diameter from 200-600 nm. We show that the optical in-coupling and out-coupling coefficients arising from depolarization field can determine the polarization of the SHG. We also demonstrate micro-photoluminescence of GaAs quantum dots in related ZB and ZB/WZ mixing sections of core-shell NW structure, in agreement with the SHG polarimetry results. The ability to perform in situ SHG-based crystallographic study of semiconducting single and multi-crystalline nanowire heterostructures will be useful in displaying structure-property relationships of nanodevices.

Bright Single-Photon Source at 1.3 µm Based on InAs Bilayer Quantum Dot in Micropillar.

A pronounced high count rate of single-photon emission at the wavelength of 1.3 µm that is capable of fiber-based quantum communication from InAs/GaAs bilayer quantum dots coupled with a micropillar (diameter ~3 µm) cavity of distributed Bragg reflectors was investigated, whose photon extraction efficiency has achieved 3.3%. Cavity mode and Purcell enhancement have been observed clearly in microphotoluminescence spectra. At the detection end of Hanbury-Brown and Twiss setup, the two avalanched single-photon counting modules record a total count rate of ~62,000/s; the time coincidence counting measurement demonstrates single-photon emission, with the multi-photon emission possibility, i.e., g 2(0), of only 0.14.