RESUMEN
Metasurface polarization optics that consist of 2D array of birefringent nano-antennas have proven remarkable capabilities to generate and manipulate vectorial fields with subwavelength resolution and high efficiency. Integrating this new type of metasurface with the standard vertical cavity surface-emitting laser (VCSEL) platform enables an ultracompact and powerful solution to control both phase and polarization properties of the laser on a chip, which allows to structure a VCSEL into vector beams with on-demand wavefronts. Here, this concept is demonstrated by directly generating versatile vector beams from commercially available VCSELs through on-chip integration of high-index dielectric metasurfaces. Experimentally, the versatility of the approach for the development of vectorial VCSELs are validated by implementing a variety of functionalities, including directional emission of multibeam with specified polarizations, vectorial holographic display, and vector vortex beams generations. Notably, the proposed vectorial VCSELs integrated with a single layer of beam shaping metasurface bypass the requirements of multiple cascaded optical components, and thus have the potential to promote the advancements of ultracompact, lightweight, and scalable vector beams sources, enriching and expanding the applications of VCSELs in optical communications, laser manipulation and processing, information encryption, and quantum optics.
RESUMEN
Polarization response of artificially structured nano-antennas can be exploited to design innovative optical components, also dubbed "vectorial metasurfaces", for the modulation of phase, amplitude, and polarization with subwavelength spatial resolution. Recent efforts in conceiving Jones matrix formalism led to the advancement of vectorial metasurfaces to independently manipulate any arbitrary phase function of orthogonal polarization states. Here, we are taking advantages of this formalism to design and experimentally validate the performance of CMOS compatible Jones matrix metasurfaces monolithically integrated with standard VCSELs for on-chip spin-decoupling and phase shaping. Our approach enables accessing the optical spin states of VCSELs in an ultra-compact way with previously unattainable phase controllability. By exploiting spin states as a new degree of freedom for laser wavefront engineering, our platform is capable of operating and reading-out the spin-momentum of lasers associated with injected spin carriers, which would potentially play a pivotal role for the development of emerging spin-optoelectronic devices.
RESUMEN
Vertical cavity surface-emitting lasers (VCSELs) have made indispensable contributions to the development of modern optoelectronic technologies. However, arbitrary beam shaping of VCSELs within a compact system has remained inaccessible until now. The emerging ultra-thin flat optical structures, namely metasurfaces, offer a powerful technique to manipulate electromagnetic fields with subwavelength spatial resolution. Here, we show that the monolithic integration of dielectric metasurfaces with VCSELs enables remarkable arbitrary control of the laser beam profiles, including self-collimation, Bessel and Vortex lasers, with high efficiency. Such wafer-level integration of metasurface through VCSEL-compatible technology simplifies the assembling process and preserves the high performance of the VCSELs. We envision that our approach can be implemented in various wide-field applications, such as optical fibre communications, laser printing, smartphones, optical sensing, face recognition, directional displays and ultra-compact light detection and ranging (LiDAR).
RESUMEN
Van der Waals heterostructures (vdWHs) have opened new avenues for fundamental scientific studies and design of novel devices. Although numerous reports have demonstrated vdWH optoelectronic devices, no report on vdWH lasers can be found to date. In this paper we demonstrated electrically driven vdWH lasers for the first time, and the lasers were realized from ZnO microwire/MgO/p-GaN structures. By coating Ag films on the top surfaces of the ZnO microwires, the current injection and lasing directionality of the vdWH lasers have been improved significantly, and this improvement can be attributed to the high conductivity and reflectivity of the Ag film. The output power of the device can reach 2.41 µW under 14 mA drive current, which is among the highest values ever reported for ZnO based lasers. Our results may provide a promising way to electrically pumped lasers based on micro/nano-structures.
RESUMEN
By taking semiconductors with different band-gap energies as the active layers and controlling the electron-hole recombination region through the electric field, bias-polarity dependent ultraviolet/visible switchable light-emitting devices have been realized in Au/MgO/Mg0.49Zn0.51O/MgxZn1-xO/n-ZnO structures, of which the emission bands can be switched from the ultraviolet region to the orange region by changing the polarity of the applied bias. The results reported here may provide a feasible idea to multicolor-switchable light-emitting devices.
