Distance-Resolving Raman Radar Based on a Time-Correlated CMOS Single-Photon Avalanche Diode Line Sensor.

Remote Raman spectroscopy is widely used to detect minerals, explosives and air pollution, for example. One of its main problems, however, is background radiation that is caused by ambient light and sample fluorescence. We present here, to the best of our knowledge, the first time a distance-resolving Raman radar device that is based on an adjustable, time-correlated complementary metal-oxide-semiconductor (CMOS) single-photon avalanche diode line sensor which can measure the location of the target sample simultaneously with the normal stand-off spectrometer operation and suppress the background radiation dramatically by means of sub-nanosecond time gating. A distance resolution of 3.75 cm could be verified simultaneously during normal spectrometer operation and Raman spectra of titanium dioxide were distinguished by this system at distances of 250 cm and 100 cm with illumination intensities of the background of 250 lux and 7600 lux, respectively. In addition, the major Raman peaks of olive oil, which has a fluorescence-to-Raman signal ratio of 33 and a fluorescence lifetime of 2.5 ns, were distinguished at a distance of 30 cm with a 250 lux background illumination intensity. We believe that this kind of time-correlated CMOS single-photon avalanche diode sensor could pave the way for new compact distance-resolving Raman radars for application where distance information within a range of several metres is needed at the same time as a Raman spectrum.

Miniaturized pulsed laser source for time-domain diffuse optics routes to wearable devices.

We validate a miniaturized pulsed laser source for use in time-domain (TD) diffuse optics, following rigorous and shared protocols for performance assessment of this class of devices. This compact source (12×6 mm2) has been previously developed for range finding applications and is able to provide short, high energy (∼100 ps, ∼0.5 nJ) optical pulses at up to 1 MHz repetition rate. Here, we start with a basic level laser characterization with an analysis of suitability of this laser for the diffuse optics application. Then, we present a TD optical system using this source and its performances in both recovering optical properties of tissue-mimicking homogeneous phantoms and in detecting localized absorption perturbations. Finally, as a proof of concept of in vivo application, we demonstrate that the system is able to detect hemodynamic changes occurring in the arm of healthy volunteers during a venous occlusion. Squeezing the laser source in a small footprint removes a key technological bottleneck that has hampered so far the realization of a miniaturized TD diffuse optics system, able to compete with already assessed continuous-wave devices in terms of size and cost, but with wider performance potentialities, as demonstrated by research over the last two decades.

Fluorescence suppression in Raman spectroscopy using a time-gated CMOS SPAD.

A Raman spectrometer technique is described that aims at suppressing the fluorescence background typical of Raman spectra. The sample is excited with a high power (65W), short (300ps) laser pulse and the time position of each of the Raman scattered photons with respect to the excitation is measured with a CMOS SPAD detector and an accurate time-to-digital converter at each spectral point. It is shown by means of measurements performed on an olive oil sample that the fluorescence background can be greatly suppressed if the sample response is recorded only for photons coinciding with the laser pulse. A further correction in the residual fluorescence baseline can be achieved using the measured fluorescence tails at each of the spectral points.

A 1 A laser driver in 0.35 microm complementary metal oxide semiconductor technology for a pulsed time-of-flight laser rangefinder.

An integrated complementary metal oxide semiconductor (CMOS) current pulse generator is presented which achieves an ampere-scale peak current pulse with a rise time and pulse width of less than 1 and 2.5 ns (pulse width at half maximum), respectively. The generator is implemented in a 0.35 microm CMOS process and consists of four parallel n-type metal oxide semiconductor transistors driven by a scaled buffer chain to achieve fast switching.