GenHPF: General Healthcare Predictive Framework for Multi-task Multi-source Learning.

Despite the remarkable progress in the development of predictive models for healthcare, applying these algorithms on a large scale has been challenging. Algorithms trained on a particular task, based on specific data formats available in a set of medical records, tend to not generalize well to other tasks or databases in which the data fields may differ. To address this challenge, we propose General Healthcare Predictive Framework (GenHPF), which is applicable to any EHR with minimal preprocessing for multiple prediction tasks. GenHPF resolves heterogeneity in medical codes and schemas by converting EHRs into a hierarchical textual representation while incorporating as many features as possible. To evaluate the efficacy of GenHPF, we conduct multi-task learning experiments with single-source and multi-source settings, on three publicly available EHR datasets with different schemas for 12 clinically meaningful prediction tasks. Our framework significantly outperforms baseline models that utilize domain knowledge in multi-source learning, improving average AUROC by 1.2%P in pooled learning and 2.6%P in transfer learning while also showing comparable results when trained on a single EHR dataset. Furthermore, we demonstrate that self-supervised pretraining using multi-source datasets is effective when combined with GenHPF, resulting in a 0.6 pretraining. By eliminating the need for preprocessing and feature engineering, we believe that this work offers a solid framework for multi-task and multi-source learning that can be leveraged to speed up the scaling and usage of predictive algorithms in healthcare.1.

Catalytic nickel silicide as an alternative to noble metals in metal-assisted chemical etching of silicon.

Metal-assisted chemical etching (MACE) has received much attention from researchers because it can be used to fabricate plasma-free anisotropic etching profiles for semiconductors. However, the etching mechanism of MACE is based on the catalytic reaction of noble metals, which restricts its use in complementary metal oxide semiconductor (CMOS) processes. To obtain process compatibility, we developed catalytic Ni after alloying it with Si as a substitute for noble metals in the MACE of Si substrates. Nickel silicide is a material commonly used as a contact electrode in CMOS processes. When NiSi was used as the catalyst, the anisotropic etching of Si with a smooth surface was successfully demonstrated. Silicidation increased the standard reduction potential of the Ni alloy and enhanced the electrochemical stability in the MACE of Si. In contrast, when pure Ni was used as the catalyst, a rough-etched surface was fabricated because of the low standard reduction potential. Based on the experimental results, the factors affecting the MACE of Si were systematically analyzed to optimize the catalytic NiSi properties. The implementation of the NiSi alloy potentially eliminates the use of noble metals in MACE and allows the technology to be adopted in contemporary CMOS processes.

Corrigendum to "Physical activity in the era of climate change and COVID-19 pandemic: Results from the South Korea's 2022 Report Card on physical activity for children and adolescents" [J Exercise Sci Fitness 21(1) (2023) 26-33].

[This corrects the article DOI: 10.1016/j.jesf.2022.10.014.].

Physical activity in the era of climate change and COVID-19 pandemic: Results from the South Korea's 2022 Report Card on physical activity for children and adolescents.

Background: With intensifying air pollutant levels and the COVID-19 pandemic, physical inactivity of South Korean children and adolescents may be threatened. Therefore, monitoring and surveillance of physical activity (PA) and relevant indicators are important for policy making pertaining to health promotion. Report Card is a third comprehensive evaluation of PA-related behaviors among and the sources of influence for South Korean children and adolescents. Purpose: To provide the outcome of the South Korea's 2022 Report Card on PA for children and adolescents. Methods: Based on a variety of sources including national surveys collected pre- and during-COVID-19 and information collected from government webpages, 11 indicators were graded by a committee of experts informed by the best available evidence. Data from during-COVID-19 were available for Overall PA, Sedentary Behavior, and Sleep and considered together in generating the overall grades. Results: Grades were assigned to behavioral indicators (Overall PA: D-; Active Transportation: B+; Sedentary Behavior: D; Sleep: F) and sources of Influence (Family and Peers: C-; School: A; Community and Environment: B-; Government: A). Organized Sport and PA, Active Play, and Physical Fitness could not be graded due to the lack of data. The results largely indicated that children and adolescents show unfavorable behavioral grades even with favorable grades observed for the sources of influence indicators. Trivial differences were observed pre- and during-pandemic for Overall PA (≥60 min of MVPA for ≥4 d/wk: 20.8% vs 19.9%) and Sleep (met age-specific recommendation: 14.1% vs 15.0%); however, a marked increase in Sedentary Behavior was observed (≤2 h/d screen time: 28.8% vs 20.1%). A stark weekday vs weekend difference was observed in sleep duration. In terms of PA related sources of influence, high accessibility to PA facilities (81.1%) and high satisfaction of neighborhood public transit (74.6%) and safety (80.7%) were well reflected in our Active Transportation grade (B+). Nonetheless, perception of green environments including outdoor air quality (44.0%), noise (39.6%) and green space (56.5%) showed lower scores, suggesting that new barriers to active lifestyles are emerging for South Korean children and adolescents. Gender differences were also observed for overall PA (≥60 min of MVPA for ≥4 d/wk: 29.1% for boys vs 11.3% for girls) and sleep (met age-specific recommendations: 17.3% for boys vs 11.4% for girls), but not for sedentary behavior (≤2 h/d screen time: 26.4% for boys and 24.9% for girls). Conclusions: Government and school policies/programs and the built environment are, in general, conducive to physically active lifestyles for South Korean children and adolescents; however, behavioural indicators received poor grades except for Active Transportation. A thorough evaluation of policies/programs at government, local, and school levels is needed to ensure that the efforts to have PA-enhancing infrastructure and systems are actually being translated into the behavior of children and adolescents in South Korea. Furthermore, improving PA surveillance, monitoring, and advocacy to ultimately establish healthy lifestyle patterns among children and adolescents is a top priority.

Chemical carving lithography with scanning catalytic probes.

This study introduces a new chemical carving technique as an alternative to existing lithography and etching techniques. Chemical carving incorporates the concept of scanning probe lithography and metal-assisted chemical etching (MaCE). A catalyst-coated probe mechanically scans a Si substrate in a solution, and the Si is chemically etched into the shape of the probes, forming pre-defined 3D patterns. A metal catalyst is used to oxidize the Si, and the silicon oxide formed is etched in the solution; this local MaCE reaction takes place continuously on the Si substrate in the scanning direction of probes. Polymer resist patterning for subsequent etching is not required; instead, scanning probes pattern the oxidation mask directly and chemical etching of Si occurs concurrently. A prototype that drives the probe with an actuator was used to analyze various aspects of the etching profiles based on the scanning speeds and sizes of the probe used. This technique suggests the possibility of forming arbitrary structures because the carving trajectory is formed according to the scan direction of the probes.

Electrochemical local etching of silicon in etchant vapor.

Direct machining and imprinting of Si are beneficial for simplifying the fabrication of microelectromechanical systems, nanoelectromechanical systems, optical devices, and fin field-effect transistors, and for reducing process costs. Electrochemical micromachining has been introduced for highly doped Si, but complex structures cannot be imprinted directly. With chemical imprinting, complex nano/micropatterns can be imprinted even on low-doped Si, but the physical contact can damage the templates. In this study, we demonstrated an electrochemical local etching (ELE) method for fabricating nano/micrometer structures on semiconductors in a noncontact manner. Polygon tips were prepared as templates on highly doped n-type Si via etching in KOH. A constant space is maintained between the template and the target Si using a gap layer to prevent damage and contamination. In the etchant vapor, the voltage bias between the template and the target Si leads to condensation of the etchant. Because the etching region is localized by the condensation of the etchant, even low-doped semiconductors can be imprinted in submicrometer patterns in a single step. When the etchant condensation is suppressed, the etching area is reduced and the resolution is increased, allowing direct imprinting of the polygonal submicrometer pattern. ELE has the potential to produce complex nano/micrometer structures in a single step without photoresists and physical contact.

Effective Schottky barrier lowering of NiGe/p-Ge(100) using Terbium interlayer structure for high performance p-type MOSFETs.

Ultra-low contact resistance at the interface between NiGe and p-Ge, i.e., NiGe/p-Ge was achieved by introducing terbium (Tb) as an interlayer in forming NiGe using Tb/Ni/TiN structure. The contact resistance value obtained using the circular transmission line model for an 8-nm thick Tb interlayer sample was 7.21 × 10-8 Ω·cm2, which is two orders of magnitude less than that of reference sample (without the Tb interlayer) of 7.36 × 10-6 Ω·cm2. The current-voltage characteristics were studied at a temperature range of -110 ~ 25 °C to determine the effective Schottky barrier height (eSBH). An eSBH of 0.016 eV was obtained for the 8-nm thick Tb interlayer. Various Tb interlayer thicknesses were selected to study their effect on the contact resistance. The Tb interlayer surface and structural properties were characterized using FESEM, XRD, XPS, TEM, and SIMS analyses.

Anodic Imprint Lithography: Direct Imprinting of Single Crystalline GaAs with Anodic Stamp.

Anodic imprint lithography patterns the GaAs substrate electrochemically by applying a voltage through a predefined anodic stamp. This newly devised technique performs anodic etching in a stamping manner. Stamps that serve as anodic electrodes are fabricated precisely, and the patterns can be imprinted continuously on GaAs substrates. The anodic current locally oxidizes the GaAs through the metal attached to the stamp, and the GaAs oxides are subsequently removed by an acid in the solution. The process is simplified because the metal catalyst is not left on the substrate and the use of an oxidizing agent is not required. Anodic imprint lithography integrates the lithography and etching steps without the use of a polymer resist. Predefined anodic stamps with fin, pillar, and mesh arrays clearly imprinted trenches, holes, and embossed disk arrays on the GaAs substrates, respectively. Anodic imprints replace photons and electrons in conventional lithography with electrochemical stamping, which can simplify existing techniques that are highly complex for extreme nanopatterning.

Subwavelength photocathodes via metal-assisted chemical etching of GaAs for solar hydrogen generation.

MacEtch allows subwavelength-structured (SWS) texturing on the GaAs surface without compromising crystallinity. The current density increases greatly, which is directly due to the reduction in the reflectance. Photons absorbed under reduced light reflectance are less affected by the charge recombination arising from crystal defects. The catalytic metal remaining after MacEtch serves as a catalyst for water splitting and increases the open-circuit potentials of the SWS GaAs photocathodes. The SWS GaAs not only amplifies the absorption of light, but also improves the collection of deeply generated photons at long wavelengths. The solar-weighted reflectance (SWR) of SWS GaAs is 6.6%, which was much lower than the 39.0% of bare GaAs. The light-limited photocurrent density (LLPC) increased by approximately 90% and the tafel slope improved as etching progressed. The external quantum efficiency was as high as 80%, especially at long wavelengths, after MacEtch. SWS GaAs photocathodes fabricated using MacEtch significantly reduce reflectance and recombination loss, thereby improving the key performance of PEC for hydrogen production. This technology can fully utilize the high absorption rate and carrier mobility of GaAs and is applicable to various photoelectric conversion device performance enhancements.

Interplay of strain and intermixing effects on direct-bandgap optical transition in strained Ge-on-Si under thermal annealing.

The influence of thermal annealing on the properties of germanium grown on silicon (Ge-on-Si) has been investigated. Depth dependencies of strain and photoluminescence (PL) were compared for as-grown and annealed Ge-on-Si samples to investigate how intermixing affects the optical properties of Ge-on-Si. The tensile strain on thermally annealed Ge-on-Si increases at the deeper region, while the PL wavelength becomes shorter. This unexpected blue-shift is attributed to Si interdiffusion at the interface, which is confirmed by energy dispersive X-ray spectroscopy and micro-Raman experiments. Not only Γ- and L-valley emissions but also Δ2-valley related emission could be found from the PL spectra, showing a possibility of carrier escape from Γ valley. Temperature-dependent PL analysis reveals that the thermal activation energy of Γ-valley emission increases at the proximity of the Ge/Si interface. By comparing the PL peak energies and their activation energies, both SiGe intermixing and shallow defect levels are found to be responsible for the activation energy increase and consequent efficiency reduction at the Ge/Si interface. These results provide an in-depth understanding of the influence of strain and Si intermixing on the direct-bandgap optical transition in thermally annealed Ge-on-Si.

Resist-Free Direct Stamp Imprinting of GaAs via Metal-Assisted Chemical Etching.

We introduce a method for the direct imprinting of GaAs substrates using wet-chemical stamping. The predefined patterns on the stamps etch the GaAs substrates via metal-assisted chemical etching. This is a resist-free method in which the stamp and the GaAs substrate are directly pressed together. Imprinting and etching occur concurrently until the stamp is released from the substrate. The stamp imprinting results in a three-dimensional anisotropic etching profile and does not impair the semiconductor crystallinity in the wet-chemical bath. Hole, trench, and complex patterns can be imprinted on the GaAs substrate after stamping with pillar, fin, and letter shapes. In addition, we demonstrate the formation of sub-100 nm trench patterns on GaAs through a single-step stamping process. Consecutive imprinting using a single stamp is possible, demonstrating the recyclability of the stamp, which can be used more than 10 times. The greatest benefit of this technique is the simple method of patterning by integrating the lithographic and etching processes, making this a high-throughput and low-cost technique.

Results from South Korea's 2018 Report Card on physical activity for children and youth.

BACKGROUND/OBJECTIVE: South Korea's 2018 Report Card on Physical Activity for Children and Youth is the second comprehensive evaluation of physical activity and the sources of influence based on the 10 core indicators provided by the Active Healthy Kids Global Alliance. It will serve as an advocacy tool to promote physical activity among children and youth. METHODS: Three national surveillance data (i.e., 2017 Korea Youth Risk Behavior Web-based Survey, 2016 Korea National Health and Nutrition Examination Survey, 2016 Physical Activity Promotion System) were used as main sources to evaluate the indicators. Descriptive statistics were performed to obtain prevalence estimates of physical activity-related indicators. In addition, expert opinions as well as the most recently available published or unpublished relevant sources were synthesized. RESULTS: South Korea's 2018 Report Card, compared to the 2016 Report Card, showed favourable changes in the Active Transportation (B+), Organized Sports Participation (C), Sedentary Behaviours (D), and School (D+) indicators, while unfavourable changes were shown in Overall Physical Activity (F) and Government (D). Physical Fitness was graded as D+. In parallel with the 2016 Report Card, Active Play, Family and Peers, and Community and Environment remain ungraded due to insufficient data. CONCLUSIONS: Successes as well as gaps and research needs were identified in the 2018 Report Card. Though some indicators have shown improvement, most children and youth continue to be insufficiently physically active with overall poor grades (Average of D+). To achieve substantial improvement in all grades in future Report Cards, more institutional and governmental support and investment is needed to promote physical activity. Furthermore, effort should be made to generate data pertaining to the indicators that were ungraded.

Combined exercise improves gastrointestinal motility in psychiatric in patients.

AIM: To examine the effect of combined exercise on colonic transit time (CTT) in admitted psychiatric patients. METHODS: Over a 6-mo period, consecutive in patients with mental illness were recruited from the Somang Hospital Psychiatry Unit. A combined exercise program that included 60 min per day of exercise 3 d per week for 12 wk was performed. Physical fitness and CTT of the patients were measured twice before and twice after the exercise program. CTT was measured using a multiple marker technique with a radio-opaque marker. Changes in the exercising patients' CTT and weight-, cardiovascular- and fitness-related parameters were statistically assessed. RESULTS: After the 12-wk combined exercise intervention, decreased intestinal transit time was observed in all CTTs of the exercise group, including the right CTT (exercise: 15.6 ± 15.2 vs 9.2 ± 11.9, control: 13.1 ± 10.4 vs 10.9 ± 18.7), left CTT (exercise: 19.7 ± 23.5 vs 10.4 ± 13.2, control: 19.2 ± 19.0 vs 16.9 ± 19.8), recto-sigmoid CTT (exercise: 14.3 ± 16.7 vs 6.7 ± 7.9, control: 15.0 ± 14.4 vs 19.3 ± 30.3), and total colonic transit time (TCTT) (exercise: 50.2 ± 38.1 vs 27.1 ± 28.0, control: 47.4 ± 34.6 vs 47.3 ± 47.3). After the 12-wk combined exercise period, TCTT was significantly shortened in the exercise group compared with that in the control group. In addition to eating habits, water intake, and fiber intake, the increased physical activity level as a result of the 12-wk combined exercise program reduced the CTT. CONCLUSION: The CTT of the psychiatric patients was reduced due to increased physical activity via a 12-wk combined exercise program.

Chemical Imprinting of Crystalline Silicon with Catalytic Metal Stamp in Etch Bath.

Conventional lithography using photons and electrons continues to evolve to scale down three-dimensional nanoscale patterns, but the complexity of technology and equipment is increasing due to diffraction and scattering problems. Physical contact lithography methods, such as nanoimprint and soft lithography, have been developed as an alternative technique. These techniques imprint predefined structures on a stamp to the polymer resist and use the polymer resist as a mask to dry etch the nanostructure on the substrate. In this study, we introduce a method of chemically imprinting crystalline silicon (Si) with a catalytic stamp to enable the direct etching of the Si without using a polymer mask. A metal catalyst is deposited on the predefined structure of the stamp. The stamp physically contacts the Si in the etching bath, and metal-assisted chemical etching occurs on the semiconductor surface. Since the metal catalyst is mounted on a stamp, it can be used repeatedly. This is a technology that combines conventional lithography and etching without using a polymer resist. This technology not only produced nano/microscale arrays of circular and square holes and trench structures but also successfully produced complex eagle-shaped structures that contained such structures.

Atomic-Layer Deposition of Single-Crystalline BeO Epitaxially Grown on GaN Substrates.

We have grown a single-crystal beryllium oxide (BeO) thin film on a gallium nitride (GaN) substrate by atomic-layer deposition (ALD) for the first time. BeO has a higher thermal conductivity, bandgap energy, and dielectric constant than SiO2. As an electrical insulator, diamond is the only material on earth whose thermal conductivity exceeds that of BeO. Despite these advantages, there is no chemical-vapor-deposition technique for BeO-thin-film deposition, and thus, it is not used in nanoscale-semiconductor-device processing. In this study, the BeO thin films grown on a GaN substrate with a single crystal showed excellent interface and thermal stability. Transmission electron microscopy showed clear diffraction patterns, and the Raman shifts associated with soft phonon modes verified the high thermal conductivity. The X-ray scan confirmed the out-of-plane single-crystal growth direction and the in-plane, 6-fold, symmetrical wurtzite structure. Single-crystalline BeO was grown on GaN despite the large lattice mismatch, which suggested a model that accommodated the strain of hexagonal-on-hexagonal epitaxy with 5/6 and 6/7 domain matching. BeO has a good dielectric constant and good thermal conductivity, bandgap energy, and single-crystal characteristics, so it is suitable for the gate dielectric of power semiconductor devices. The capacitance-voltage (C-V) results of BeO on a GaN-metal-oxide semiconductor exhibited low frequency dispersion, hysteresis, and interface-defect density.

Nanostructured GaAs solar cells via metal-assisted chemical etching of emitter layers.

GaAs solar cells with nanostructured emitter layers were fabricated via metal-assisted chemical etching. Au nanoparticles produced via thermal treatment of Au thin films were used as etch catalysts to texture an emitter surface with nanohole structures. Epi-wafers with emitter layers 0.5, 1.0, and 1.5 um in thickness were directly textured and a window layer removal process was performed before metal catalyst deposition. A nanohole-textured emitter layer provides effective light trapping capabilities, reducing the surface reflection of a textured solar cell by 11.0%. However, because the nanostructures have high surface area to volume ratios and large numbers of defects, various photovoltaic properties were diminished by high recombination losses. Thus, we have studied the application of nanohole structures to GaAs emitter solar cells and investigated the cells' antireflection and photovoltaic properties as a function of the nanohole structure and emitter thickness. Due to decreased surface reflection and improved shunt resistance, the solar cell efficiency increased from 4.25% for non-textured solar cells to 7.15% for solar cells textured for 5 min.

Three-Dimensional Flexible All-Organic Conductors for Multifunctional Wearable Applications.

Wearable textile electrodes based on π-conjugated polymers are appealing alternatives to carbon fabrics, conductive yarns, or metal wires because of their design flexibility, low cost, flexibility, and high throughput. This provides the benefits of both electronics and textiles. Herein, a general and new method has been developed to produce tailorable, wearable energy devices that are based on three-dimensional (3D) poly(3,4-ethylenedioxythiophene) (PEDOT)-coated textile conductors. To obtain the desired electrode materials, both facile solution-dropping polymerization methods are used to fabricate a 3D flexible PEDOT conductor on a cotton textile (PEDOT/textile). PEDOT/textile shows a very low sheet resistance of 4.6-4.9 Ω·sq-1. Here, we employ the example of this 3D network-like structure and the excellent electrical conductivities under the large deformation of PEDOT/textiles to show that wearable and portable heaters have immense potential. A flexible textile heater with a large area (8 × 7.8 cm2) reached a saturation temperature of ∼83.9 °C when a bias of 7 V was applied for ∼70 s due to the good electrical conductivity of PEDOT. To demonstrate the performance of all-solid-state supercapacitors, nano-ascidian-like PEDOT (PEDOT-NA) arrays were prepared via a simple vapor-phase polymerization of 3,4-ethylenedioxythiophene on PEDOT/textile to increase both the surface area and the number of ion diffusion paths. The PEDOT-NA arrays on PEDOT/textile showed outstanding performance with an areal capacitance of 563.3 mF·cm-2 at 0.4 mA·cm-2 and extraordinary mechanical flexibility. The maximum volumetric power density and energy density of the nanostructured PEDOT on the textile were 1.75 W·cm-3 and 0.0812 Wh·cm-3, respectively. It is expected that the wearable nanostructured conducting polymers will have advantages when used as structures for smart textronics and energy conversion/storage.

Advanced Silicon-on-Insulator: Crystalline Silicon on Atomic Layer Deposited Beryllium Oxide.

Silicon-on-insulator (SOI) technology improves the performance of devices by reducing parasitic capacitance. Devices based on SOI or silicon-on-sapphire technology are primarily used in high-performance radio frequency (RF) and radiation sensitive applications as well as for reducing the short channel effects in microelectronic devices. Despite their advantages, the high substrate cost and overheating problems associated with complexities in substrate fabrication as well as the low thermal conductivity of silicon oxide prevent broad applications of this technology. To overcome these challenges, we describe a new approach of using beryllium oxide (BeO). The use of atomic layer deposition (ALD) for producing this material results in lowering the SOI wafer production cost. Furthermore, the use of BeO exhibiting a high thermal conductivity might minimize the self-heating issues. We show that crystalline Si can be grown on ALD BeO and the resultant devices exhibit potential for use in advanced SOI technology applications.

Nano/micro dual-textured antireflective subwavelength structures in anisotropically etched GaAs.

Light trapping by surface texturing is widely used to improve the performance of optoelectronic devices. In this Letter, we demonstrate nano/micro dual-scale textured GaAs by integrating triangular GaAs by orientation-dependent wet etching and subwavelength nanoholes by metal-assisted chemical etching (MacEtch). This is the first report on nano/micro dual-scale textured GaAs. The reflectance was adjusted by controlling the aspect ratio of the nanoholes by varying the MacEtch duration. The combination of the microstructure and subwavelength structures significantly reduced the solar-weighted reflectance of a bare GaAs substrate by 72%.