Obtaining nanoimprint template gratings with 10 nm half-pitch by atomic layer deposition enabled spacer double patterning.

A strategy for fabricating nanoimprint templates with sub-10 nm line and 20 nm pitch gratings is demonstrated, by combining electron beam lithography and atomic layer deposition. This is achieved through pitch division using a spacer double-patterning technique. The nanostructures are then replicated using step-and-repeat ultra-violet assisted nanoimprint lithography.

Plasmon resonance tuning in metallic nanocavities.

Nanocavities fabricated in a metallic surface have important and technologically useful properties of complete light absorption and strong field enhancement. Here, we demonstrate how a nanometerthick alumina deposition inside such a cavity can be used to gain an exquisite control over the resonance wavelength. This process allows achieving a precise control over the spectral response and is completely reversible allowing many tuning attempts to be made on a single structure until the optimum performance is achieved.

Sub-20 nm laser ablation for lithographic dry development.

Pattern collapse of small or high aspect ratio lines during traditional wet development is a major challenge for miniaturization in nanolithography. Here we report on a new dry process which combines high resolution resist exposure with selective laser ablation to achieve high resolution with high aspect ratios. Using a low power 532 nm laser, we dry develop a normally negative tone methyl acetoxy calix(6)arene in positive tone to reveal sub-20 nm half-pitch features in a ∼100 nm film at aspect ratios unattainable with conventional development with ablation time of 1-2 s per laser pixel (∼600 nm diameter spot). We also demonstrate superior negative tone wet development by combining electron beam exposure with subsequent laser exposure at a non-ablative threshold that requires far less electron beam exposure doses than traditional wet development.

Single digit nanofabrication by step-and-repeat nanoimprint lithography.

A novel strategy for fabricating nanoimprint templates with sub-10 nm patterns is demonstrated by combining electron beam lithography and atomic layer deposition. Nanostructures are replicated by step-and-repeat nanoimprint lithography and successfully transferred into functional material with high fidelity. The process extends the capacity of step-and-repeat nanoimprint lithography as a single digit nanofabrication method. Using the ALD process for feature shrinkage, we identify a size dependent deposition rate.

Step and repeat UV nanoimprint lithography on pre-spin coated resist film: a promising route for fabricating nanodevices.

A step and repeat UV nanoimprint lithography process on pre-spin coated resist film is demonstrated for patterning a large area with features sizes down to sub-15 nm. The high fidelity between the template and imprinted structures is verified with a difference in their line edge roughness of less than 0.5 nm (3σ deviation value). The imprinted pattern's residual layer is well controlled to allow direct pattern transfer from the resist into functional materials with very high resolution. The process is suitable for fabricating numerous nanodevices.

Self-collimation of light over millimeter-scale distance in a quasi-zero-average-index metamaterial.

Inspired by the concept of complementary media, we experimentally demonstrate that an engineered metamaterial made of alternating, stripe layers of negatively refracting (photonic crystals) and positively refracting (air) materials strongly collimates a beam of near-infrared light. This quasi-zero-average-index metamaterial fully preserves the beam spot size throughout the sample for a light beam traveling through the metamaterial a distance of 2 mm-more than 1000 times the input wavelength lambda=1.55 microm. These results demonstrate the first explicit experimental verification of optical antimatter as proposed by Pendry and Ramakrishna [J. Pendry and S. Ramakrishna, J. Phys. Condens. Matter 15, 6345 (2003)10.1088/0953-8984/15/37/004], using two complementary media in which each n(eff)=-1 layer appears to annihilate an equal thickness layer of air.

A silicon-based, sequential coat-and-etch process to fabricate nearly perfect substrate surfaces.

For many thin-film applications substrate imperfections such as particles, pits, scratches, and general roughness, can nucleate film defects which can severely detract from the coating's performance. Previously we developed a coat-and-etch process, termed the ion beam thin film planarization process, to planarize substrate particles up to approximately 70 nm in diameter. The process relied on normal incidence etching; however, such a process induces defects nucleated by substrate pits to grow much larger. We have since developed a coat-and-etch process to planarize approximately 70 nm deep by 70 nm wide substrate pits; it relies on etching at an off-normal incidence angle, i.e., an angle of approximately 470 degrees from the substrate normal. However, a disadvantage of this pit smoothing process is that it induces defects nucleated by substrate particles to grow larger. Combining elements from both processes we have been able to develop a silicon-based, coat-and-etch process to successfully planarize approximately 70 nm substrate particles and pits simultaneously to at or below 1 nm in height; this value is important for applications such as extreme ultraviolet lithography (EUVL) masks. The coat-and-etch process has an added ability to significantly reduce high-spatial frequency roughness, rendering a nearly perfect substrate surface.