Tailoring Broadband Kerr Soliton Microcombs via Post-Fabrication Tuning of the Geometric Dispersion.

Geometric dispersion in integrated microresonators plays a major role in nonlinear optics applications, especially at short wavelengths, to compensate the natural material normal dispersion. Tailoring of geometric confinement allows for anomalous dispersion, which in particular enables the formation of microcombs which can be tuned into the dissipative Kerr soliton (DKS) regime. Due to processes like soliton-induced dispersive wave generation, broadband DKS combs are particularly sensitive to higher-order dispersion, which in turn is sensitive to the ring dimensions at the nanometer-level. For microrings exhibiting a rectangular cross section, the ring width and thickness are the two main control parameters to achieve the targeted dispersion. The former can be easily varied through parameter variation within the lithography mask, yet the latter is defined by the film thickness during growth of the starting material stack, and can show a significant variation (few percent of the total thickness) over a single wafer. In this letter, we demonstrate that controlled dry-etching allows for fine tuning of the device layer (silicon nitride) thickness at the wafer level, allowing multi-project wafers targeting different wavelength bands, and post-fabrication trimming in air-clad ring devices. We demonstrate that such dry etching does not significantly affect either the silicon nitride surface roughness or the optical quality of the devices, thereby enabling fine tuning of the dispersion and the spectral shape of the resulting DKS states.

Wear comparison of critical dimension-atomic force microscopy tips.

Nanoscale wear affects the performance of atomic force microscopy (AFM)-based measurements for all applications including process control measurements and nanoelectronics characterization. As such, methods to prevent or reduce AFM tip wear is an area of active research. However, most prior work has been on conventional AFMs rather than critical dimension AFM (CD-AFM). Hence, less is known about CD-AFM tip-wear. Given that tip-wear directly affects the accuracy of dimensional measurements, a basic understanding of CD-AFM tip wear is needed. Toward this goal, we evaluated the wear performance of electron beam deposited CD-AFM tips. Using a continuous scanning strategy, we evaluated the overall wear rate and tip lifetime and compared these with those of silicon-based CD-AFM tips. Our data show improved tip lifetime of as much as a factor of five and reduced wear rates of more than 17 times. Such improvements in wear rate means less measurement variability and lower cost.

Spatial dimensions in atomic force microscopy: Instruments, effects, and measurements.

Atomic force microscopes (AFMs) are commonly and broadly regarded as being capable of three-dimensional imaging. However, conventional AFMs suffer from both significant functional constraints and imaging artifacts that render them less than fully three dimensional. To date a widely accepted consensus is still lacking with respect to characterizing the spatial dimensions of various AFM measurements. This paper proposes a framework for describing the dimensional characteristics of AFM images, instruments, and measurements. Particular attention is given to instrumental and measurement effects that result in significant non-equivalence among the three axes in terms of both data characteristics and instrument performance. Fundamentally, our position is that no currently available AFM should be considered fully three dimensional in all relevant aspects.

Evaluation of carbon nanotube probes in critical dimension atomic force microscopes.

The decreasing size of semiconductor features and the increasing structural complexity of advanced devices have placed continuously greater demands on manufacturing metrology, arising both from the measurement challenges of smaller feature sizes and the growing requirement to characterize structures in more than just a single critical dimension. For scanning electron microscopy, this has resulted in increasing sophistication of imaging models. For critical dimension atomic force microscopes (CD-AFMs), this has resulted in the need for smaller and more complex tips. Carbon nanotube (CNT) tips have thus been the focus of much interest and effort by a number of researchers. However, there have been significant issues surrounding both the manufacture and use of CNT tips. Specifically, the growth or attachment of CNTs to AFM cantilevers has been a challenge to the fabrication of CNT tips, and the flexibility and resultant bending artifacts have presented challenges to using CNT tips. The Korea Research Institute for Standards and Science (KRISS) has invested considerable effort in the controlled fabrication of CNT tips and is collaborating with the National Institute of Standards and Technology on the application of CNT tips for CD-AFM. Progress by KRISS on the precise control of CNT orientation, length, and end modification, using manipulation and focused ion beam processes, has allowed us to implement ball-capped CNT tips and bent CNT tips for CD-AFM. Using two different generations of CD-AFM instruments, we have evaluated these tip types by imaging a line/space grating and a programmed line edge roughness specimen. We concluded that these CNTs are capable of scanning the profiles of these structures, including re-entrant sidewalls, but there remain important challenges to address. These challenges include tighter control of tip geometry and careful optimization of scan parameters and algorithms for using CNT tips.

Lateral Tip Control Effects in CD-AFM Metrology: The Large Tip Limit.

Sidewall sensing in critical dimension atomic force microscopes (CD-AFMs) usually involves continuous lateral dithering of the tip or the use of a control algorithm and fast response piezo actuator to position the tip in a manner that resembles touch-triggering of coordinate measuring machine (CMM) probes. All methods of tip position control, however, induce an effective tip width that may deviate from the actual geometrical tip width. Understanding the influence and dependence of the effective tip width on the dither settings and lateral stiffness of the tip can improve the measurement accuracy and uncertainty estimation for CD-AFM measurements. Since CD-AFM typically uses tips that range from 15 nm to 850 nm in geometrical width, the behavior of effective tip width throughout this range should be understood. The National Institute of Standards and Technology (NIST) has been investigating the dependence of effective tip width on the dither settings and lateral stiffness of the tip, as well as the possibility of material effects due to sample composition. For tip widths of 130 nm and lower, which also have lower lateral stiffness, the response of the effective tip width to lateral dither is greater than for larger tips. However, we have concluded that these effects will not generally result in a residual bias, provided that the tip calibration and sample measurement are performed under the same conditions. To validate that our prior conclusions about the dependence of effective tip width on lateral stiffness are valid for large CD-tips, we recently performed experiments using a very large non-CD tip with an etched plateau of approximately 2 µm width. The effective lateral stiffness of these tips is at least 20 times greater than typical CD-AFM tips, and these results supported our prior conclusions about the expected behavior for larger tips. The bottom-line importance of these latest observations is that we can now reasonably conclude that a dither slope of 3 nm/V is the baseline response due to the induced motion of the cantilever base.

Tip characterization method using multi-feature characterizer for CD-AFM.

In atomic force microscopy (AFM) metrology, the tip is a key source of uncertainty. Images taken with an AFM show a change in feature width and shape that depends on tip geometry. This geometric dilation is more pronounced when measuring features with high aspect ratios, and makes it difficult to obtain absolute dimensions. In order to accurately measure nanoscale features using an AFM, the tip dimensions should be known with a high degree of precision. We evaluate a new AFM tip characterizer, and apply it to critical dimension AFM (CD-AFM) tips used for high aspect ratio features. The characterizer is made up of comb-shaped lines and spaces, and includes a series of gratings that could be used as an integrated nanoscale length reference. We also demonstrate a simulation method that could be used to specify what range of tip sizes and shapes the characterizer can measure. Our experiments show that for non re-entrant features, the results obtained with this characterizer are consistent to 1nm with the results obtained by using widely accepted but slower methods that are common practice in CD-AFM metrology. A validation of the integrated length standard using displacement interferometry indicates a uniformity of better than 0.75%, suggesting that the sample could be used as highly accurate and SI traceable lateral scale for the whole evaluation process.