Efficient Raman Lasing and Raman-Kerr Interaction in an Integrated Silicon Carbide Platform.

Implementing stimulated Raman scattering in a low-loss microresonator could lead to Raman lasing. Here, we report the demonstration of an efficient Raman laser with >50% power efficiency in an integrated silicon carbide platform for the first time. By fine-tuning the free spectral range (FSR) of 43 µm-radius silicon carbide microresonators, the Stokes resonance corresponding to the dominant Raman shift of 777 cm-1 (23.3 THz) is aligned to the center of the Raman gain spectrum, resulting in a low power threshold of 2.5 mW. The peak Raman gain coefficient is estimated to be (0.75 ± 0.15) cm/GW in the 1550 nm band, with an approximate full width at half-maximum of (120 ± 30) GHz. In addition, the microresonator is designed to exhibit normal dispersion at the pump wavelength near 1550 nm while possessing anomalous dispersion at the first Stokes near 1760 nm. At high enough input powers, a Kerr microcomb is generated by the Stokes signal acting as the secondary pump, which then mixes with the pump laser through four-wave mixing to attain a wider spectral coverage. Furthermore, cascaded Raman lasing and the occurrence of multiple Raman shifts, including 204 cm-1 (6.1 THz) and 266 cm-1 (8.0 THz) transitions, are also observed. Finally, we show that the Stokes Raman could also help broaden the spectrum in a Kerr microcomb which has anomalous dispersion at the pump wavelength. Our example of a 100 GHz-FSR microcomb has a wavelength span from 1200 to 1900 nm with 300 mW on-chip power.

The Ethnopharmacological, Phytochemical, and Pharmacological Review of Euryale ferox Salisb.: A Chinese Medicine Food Homology.

Euryale ferox Salisb. (prickly water lily) is the only extent of the genus Euryale that has been widely distributed in China, India, Korea, and Japan. The seeds of E. ferox (EFS) have been categorized as superior food for 2000 years in China, based on their abundant nutrients including polysaccharides, polyphenols, sesquineolignans, tocopherols, cyclic dipeptides, glucosylsterols, cerebrosides, and triterpenoids. These constituents exert multiple pharmacological effects, such as antioxidant, hypoglycemic, cardioprotective, antibacterial, anticancer, antidepression, and hepatoprotective properties. There are very few summarized reports on E. ferox, albeit with its high nutritional value and beneficial activities. Therefore, we collected the reported literature (since 1980), medical classics, database, and pharmacopeia of E. ferox, and summarized the botanical classification, traditional uses, phytochemicals, and pharmacological effects of E. ferox, which will provide new insights for further research and development of EFS-derived functional products.

Emerging SiC Applications beyond Power Electronic Devices.

In recent years, several new applications of SiC (both 4H and 3C polytypes) have been proposed in different papers. In this review, several of these emerging applications have been reported to show the development status, the main problems to be solved and the outlooks for these new devices. The use of SiC for high temperature applications in space, high temperature CMOS, high radiation hard detectors, new optical devices, high frequency MEMS, new devices with integrated 2D materials and biosensors have been extensively reviewed in this paper. The development of these new applications, at least for the 4H-SiC ones, has been favored by the strong improvement in SiC technology and in the material quality and price, due to the increasing market for power devices. However, at the same time, these new applications need the development of new processes and the improvement of material properties (high temperature packages, channel mobility and threshold voltage instability improvement, thick epitaxial layers, low defects, long carrier lifetime, low epitaxial doping). Instead, in the case of 3C-SiC applications, several new projects have developed material processes to obtain more performing MEMS, photonics and biomedical devices. Despite the good performance of these devices and the potential market, the further development of the material and of the specific processes and the lack of several SiC foundries for these applications are limiting further development in these fields.

Wet-Oxidation-Assisted Chemical Mechanical Polishing and High-Temperature Thermal Annealing for Low-Loss 4H-SiC Integrated Photonic Devices.

Silicon carbide (SiC) has become a promising optical material for quantum photonics and nonlinear photonics during the past decade. In this work, we propose two methods to improve the 4H-SiC thin film quality for SiC integrated photonic chips. Firstly, we develop a wet-oxidation-assisted chemical mechanical polishing (CMP) process for 4H-SiC, which can significantly decrease the surface roughness from 3.67 nm to 0.15 nm, thus mitigating the light scattering loss. Secondly, we find that the thermal annealing of the 4H-SiC devices at 1300 °C can help to decrease the material absorption loss. We experimentally demonstrate that the wet-oxidation-assisted CMP and the high-temperature annealing can effectively increase the intrinsic quality factor of the 4H-SiC optical microring resonators.

Novel Photonic Applications of Silicon Carbide.

Silicon carbide (SiC) is emerging rapidly in novel photonic applications thanks to its unique photonic properties facilitated by the advances of nanotechnologies such as nanofabrication and nanofilm transfer. This review paper will start with the introduction of exceptional optical properties of silicon carbide. Then, a key structure, i.e., silicon carbide on insulator stack (SiCOI), is discussed which lays solid fundament for tight light confinement and strong light-SiC interaction in high quality factor and low volume optical cavities. As examples, microring resonator, microdisk and photonic crystal cavities are summarized in terms of quality (Q) factor, volume and polytypes. A main challenge for SiC photonic application is complementary metal-oxide-semiconductor (CMOS) compatibility and low-loss material growth. The state-of-the-art SiC with different polytypes and growth methods are reviewed and a roadmap for the loss reduction is predicted for photonic applications. Combining the fact that SiC possesses many different color centers with the SiCOI platform, SiC is also deemed to be a very competitive platform for future quantum photonic integrated circuit applications. Its perspectives and potential impacts are included at the end of this review paper.

High-performance silicon carbide polarization beam splitting based on an asymmetric directional couplers for mode conversion.

Polarization manipulation and management are important for 4H-silicon carbide (SiC) integrated photonics, as 4H-SiC has material-based birefringent properties. In this Letter, we propose a low-birefringence polarization beam splitter (PBS) based on asymmetric directional coupler (ADC) mode converters with overall high performances. We numerically and experimentally demonstrate the ADC mode conversion based PBS on a 4H-SiC chip. The experimental results show that the device exhibits high transmittance of -0.6 dB and -1.3 dB for the transverse-electric (TE) and transverse-magnetic (TM) polarized light, respectively, and broad operational bandwidth over 130 nm. The polarization extinction ratio of >25 dB and >17 dB covering the whole C band for the TE and TM polarized light, respectively, and an ultra-large polarization extinction ratio of >32 dB for both polarizations at approximately 1560 nm are achieved.

Meta-Analysis of PKP or PVP Combined with Acupuncture in the Treatment of Osteoporotic Vertebral Compression Fractures.

The efficacy of acupuncture combined with percutaneous kyphoplasty (PKP) or percutaneous vertebroplasty (PVP) in the treatment of osteoporotic vertebral compression fracture is systematically evaluated. The clinical trials of acupuncture combined with PKP or PVP in the treatment of osteoporotic vertebral compression fracture published before July 2021 are searched in databases of CNKI, WF, VIP, CBM, PubMed, Cochrane Library, and Embase. The information of included studies is extracted, and the quality is assessed by two independent researchers. The meta-analysis is performed by using RevMan 5.3 software. A total of 9 trials are included, involving 851 patients. The experimental results show that the therapeutic effect of acupuncture combined with PKP/PVP in the treatment of osteoporotic vertebral compression fracture (OVCF) is superior to that of PKP/PVP alone, and both the VAS score and ODI score of PKP/PVP combined with ordinary acupuncture or silver needle acupuncture are better than those of the control group one month after the operation. The effect of ordinary acupuncture combined with PKP/PVP on the increase of bone mineral density is better than that of the control group. Acupuncture combined with PKP/PVP in the treatment of osteoporotic vertebral compression fracture has better efficacy than PKP/PVP, and it can effectively relieve patients' pain, improve bone density, and improve the quality of life.

Loss of schizophrenia-related miR-501-3p in mice impairs sociability and memory by enhancing mGluR5-mediated glutamatergic transmission.

Schizophrenia is a polygenetic disease, the heterogeneity of which is likely complicated by epigenetic modifications yet to be elucidated. Here, we performed transcriptomic analysis of peripheral blood RNA from monozygotic twins discordant for schizophrenia and identified a schizophrenia-associated down-regulated microRNA, miR-501-3p. We showed that the loss of miR-501-3p in germline knockout (KO) male mice resulted in dendritic structure defects, glutamatergic transmission enhancement, and sociability, memory, and sensorimotor gating disruptions, which were attenuated when miR-501 expression was conditionally restored in the nervous system. Combining the results of proteomic analyses with the known genes linked to schizophrenia revealed that metabotropic glutamate receptor 5 (mGluR5) was one of the miR-501-3p targets and was elevated in vivo upon loss of miR-501. Treatment with the mGluR5 negative allosteric modulator 3-2((-methyl-4-thiazolyl) ethynyl) pyridine or the N-methyl-d-aspartate receptor antagonist 2-amino-5-phosphonopentanoic acid ameliorated the deficits observed in Mir501-KO mice. The epigenetic and pathophysiological mechanism that links miR-501-3p to the modulation of glutamatergic transmission provides etiological implications for schizophrenia.

Polarization-insensitive ultra-short waveguide taper.

Waveguide taper, a key component in the photonic integrated circuit (PIC), enables on-chip mode conversion, but large-footprint tapers are detrimental to the PIC, which desires compact and efficient devices. Polarization sensitivity also limits the tapers in the applications involving orthogonal modes. In this work, we design an efficient polarization-insensitive ultra-short MMI-based waveguide taper, through the mode spreading principle and the self-image principle. The proposed taper is 26.3 µm long, one order of magnitude shorter than the standard linear taper. We fabricate the taper, and experimentally demonstrate that it exhibits a high transmission efficiency of ∼70% and a wide 1 dB bandwidth of >54nm, for both TE and TM polarizations.

Allele-specific DNA methylation maps in monozygotic twins discordant for psychiatric disorders reveal that disease-associated switching at the EIPR1 regulatory loci modulates neural function.

The non-Mendelian features of phenotypic variations within monozygotic twins are likely complicated by environmental modifiers of genetic effects that have yet to be elucidated. Here, we performed methylome and genome analyses of blood DNA from psychiatric disorder-discordant monozygotic twins to study how allele-specific methylation (ASM) mediates phenotypic variations. We identified that thousands of genetic variants with ASM imbalances exhibit phenotypic variation-associated switching at regulatory loci. These ASMs have plausible causal associations with psychiatric disorders through effects on interactions between transcription factors, DNA methylations, and other epigenomic markers and then contribute to dysregulated gene expression, which eventually increases disease susceptibility. Moreover, we also experimentally validated the model that the rs4854158 alternative C allele at an ASM switching regulatory locus of EIPR1 encoding endosome-associated recycling protein-interacting protein 1, is associated with demethylation and higher RNA expression and shows lower TF binding affinities in unaffected controls. An epigenetic ASM switching induces C allele hypermethylation and then recruits repressive Polycomb repressive complex 2 (PRC2), reinforces trimethylation of lysine 27 on histone 3 and inhibits its transcriptional activity, thus leading to downregulation of EIPR1 in schizophrenia. Moreover, disruption of rs4854158 induces gain of EIPR1 function and promotes neural development and vesicle trafficking. Our study provides a powerful framework for identifying regulatory risk variants and contributes to our understanding of the interplay between genetic and epigenetic variants in mediating psychiatric disorder susceptibility.

LncRNA-AC006129.1 reactivates a SOCS3-mediated anti-inflammatory response through DNA methylation-mediated CIC downregulation in schizophrenia.

Schizophrenia is a complex genetic disorder, the non-Mendelian features of which are likely complicated by epigenetic factors yet to be elucidated. Here, we performed RNA sequencing of peripheral blood RNA from monozygotic twins discordant for schizophrenia, and identified a schizophrenia-associated upregulated long noncoding RNA (lncRNA, AC006129.1) that participates in the inflammatory response by enhancing SOCS3 and CASP1 expression in schizophrenia patients and further validated this finding in AC006129.1-overexpressing mice showing schizophrenia-related abnormal behaviors. We find that AC006129.1 binds to the promoter region of the transcriptional repressor Capicua (CIC), facilitates the interactions of DNA methyltransferases with the CIC promoter, and promotes DNA methylation-mediated CIC downregulation, thereby ameliorating CIC-induced SOCS3 and CASP1 repression. Derepression of SOCS3 enhances the anti-inflammatory response by inhibiting JAK/STAT-signaling activation. Our findings reveal an epigenetic mechanism with etiological and therapeutic implications for schizophrenia.

Voltage-Controlled Anodic Oxidation of Porous Fluorescent SiC for Effective Surface Passivation.

This study investigated the fabrication of porous fluorescent SiC using a constant voltage-controlled anodic oxidation process. The application of a high, constant voltage resulted in a spatial distinction between the porous structures formed inside the fluorescent SiC substrates, due to the different etching rates at the terrace and the large step bunches. Large, dendritic porous structures were formed as the etching process continued and the porous layer thickened. Under the conditions of low hydrofluoric acid (HF) concentration, the uniformity of the dendritic porous structures through the entire porous layer was considerably improved compared with the conditions of high HF concentration. The resulting large uniform structure offered a sizable surface area, and promoted the penetration of atomic layer-deposited (ALD) Al2O3 films (ALD-Al2O3). The emission intensity in the porous fluorescent SiC was confirmed via photoluminescence (PL) measurements to be significantly improved by a factor of 128 after ALD passivation. With surface passivation, there was a clear blueshift in the emission wavelength, owing to the effective suppression of the non-radiative recombination rate in the porous structures. Furthermore, the spatial uniformity of emitted light was examined via PL mapping using three different excitation lasers, which resulted in the observation of uniform and distinctive emissions in the fluorescent SiC bulk and porous areas.

4H-SiC microring resonators for nonlinear integrated photonics.

We demonstrate enhanced four-wave mixing (FWM) in high-quality factor, high-confinement 4H-SiC microring resonators via continuous-wave FWM. With the large power buildup effect of the microring resonator, -21.7 dBFWM conversion efficiency is achieved with 79 mW pump power. Thanks to the strong light confinement in SiC-on-insulator (SiCOI) waveguides with submicrometer cross-sectional dimensions, a high nonlinear parameter wγ of 7.4±0.9 W-1 m-1 is obtained, from which the nonlinear refractive index (n2) of 4H-SiC is estimated to be (6.0±0.6)×10-19 m2/W at the telecom wavelengths. Besides, we are able to engineer the dispersion of a SiCOI waveguide to achieve 3 dB FWM conversion bandwidth of more than 130 nm. This work represents a step toward enabling all-optical signal processing functionalities using highly nonlinear SiCOI waveguides.

Temperature-dependent photoluminescence properties of porous fluorescent SiC.

A comprehensive study of surface passivation effect on porous fluorescent silicon carbide (SiC) was carried out to elucidate the luminescence properties by temperature dependent photoluminescence (PL) measurement. The porous structures were prepared using an anodic oxidation etching method and passivated by atomic layer deposited (ALD) Al2O3 films. An impressive enhancement of PL intensity was observed in porous SiC with ALD Al2O3, especially at low temperatures. At temperatures below 150 K, two prominent PL emission peaks located at 517 nm and 650 nm were observed. The broad emission peak at 517 nm was attributed to originate from the surface states in the porous structures, which was supported by X-ray photoelectron spectra characterization. The emission peak at 650 nm is due to donor-acceptor-pairs (DAP) recombination via nitrogen donors and boron-related double D-centers in fluorescent SiC substrates. The results of the present work suggest that the ALD Al2O3 films can effectively suppress the non-radiative recombination for the porous structures on fluorescent SiC. In addition, we provide the evidence based on the low-temperature time-resolved PL that the mechanism behind the PL emission in porous structures is mainly related to the transitions via surface states.

Photoluminescence Quantum Yield of Fluorescent Silicon Carbide Determined by an Integrating Sphere Setup.

The excitation-dependent photoluminescence quantum yield (PL-QY) of strong n-type nitrogen-boron codoped 6H fluorescent silicon carbide (f-SiC) at room temperature is experimentally determined for the first time. The PL-QY measurements are realized by an integrating sphere system based on a classical two-measurement approach. In particular, in accordance to the difference between our in-lab setup and the standard setup of the two-measurement approach, we have technically modified the experimental design, the data processing algorithm, and the estimation of relative uncertainty. The measured highest PL-QY of f-SiC samples is found to reach above 30%. We compare the PL-QYs at a certain excitation power of all f-SiC samples by considering their intrinsic defect densities. Finally, the evolution of the excitation power-dependent PL-QY of f-SiC is attributed to both band-to-band and impurity-assisted Auger recombination.

High-quality factor, high-confinement microring resonators in 4H-silicon carbide-on-insulator.

Silicon carbide (SiC) exhibits promising material properties for nonlinear integrated optics. We report on a SiC-on-insulator platform based on crystalline 4H-SiC and demonstrate high-confinement SiC microring resonators with sub-micron waveguide cross-sectional dimensions. The Q factor of SiC microring resonators in such a sub-micron waveguide dimension is improved by a factor of six after surface roughness reduction by applying a wet oxidation process. We achieve a high Q factor (73,000) for such devices and show engineerable dispersion from normal to anomalous dispersion by controlling the waveguide cross-sectional dimension, which paves the way toward nonlinear applications in SiC microring resonators.

Direct van der Waals Epitaxy of Crack-Free AlN Thin Film on Epitaxial WS2.

Van der Waals epitaxy (vdWE) has drawn continuous attention, as it is unlimited by lattice-mismatch between epitaxial layers and substrates. Previous reports on the vdWE of III-nitride thin film were mainly based on two-dimensional (2D) materials by plasma pretreatment or pre-doping of other hexagonal materials. However, it is still a huge challenge for single-crystalline thin film on 2D materials without any other extra treatment or interlayer. Here, we grew high-quality single-crystalline AlN thin film on sapphire substrate with an intrinsic WS2 overlayer (WS2/sapphire) by metal-organic chemical vapor deposition, which had surface roughness and defect density similar to that grown on conventional sapphire substrates. Moreover, an AlGaN-based deep ultraviolet light emitting diode structure on WS2/sapphire was demonstrated. The electroluminescence (EL) performance exhibited strong emissions with a single peak at 283 nm. The wavelength of the single peak only showed a faint peak-position shift with increasing current to 80 mA, which further indicated the high quality and low stress of the AlN thin film. This work provides a promising solution for further deep-ultraviolet (DUV) light emitting electrodes (LEDs) development on 2D materials, as well as other unconventional substrates.

Direct Growth of AlGaN Nanorod LEDs on Graphene-Covered Si.

High density of defects and stress owing to the lattice and thermal mismatch between nitride materials and heterogeneous substrates have always been important problems and limit the development of nitride materials. In this paper, AlGaN light-emitting diodes (LEDs) were grown directly on a single-layer graphene-covered Si (111) substrate by metal organic chemical vapor deposition (MOCVD) without a metal catalyst. The nanorods was nucleated by AlGaN nucleation islands with a 35% Al composition, and included n-AlGaN, 6 period of AlGaN multiple quantum wells (MQWs), and p-AlGaN. Scanning electron microscopy (SEM) and electron backscatter diffraction (EBSD) showed that the nanorods were vertically aligned and had an accordant orientation along the [0001] direction. The structure of AlGaN nanorod LEDs was investigated by scanning transmission electron microscopy (STEM). Raman measurements of graphene before and after MOCVD growth revealed the graphene could withstand the high temperature and ammonia atmosphere in MOCVD. Photoluminescence (PL) and cathodoluminescence (CL) characterized an emission at ~325 nm and demonstrated the low defects density in AlGaN nanorod LEDs.

Experimentally validated full-vectorial model of wavelength multicasting via four-wave mixing in straight waveguides.

We derive full-vectorial nonlinear propagation equations of dual-pumped four-wave mixing in straight waveguides, which are valid in characterizing the one-to-six wavelength multicasting. Special attention is paid to the resulting idler wavelengths and their conversion efficiency, which enables the optimization of the experimental designs, including the incident wavelength and the power of pumps and signal. We validate the model by comparing the numerical simulation to the experimental measurement in a silicon-on-insulator waveguide, for the first time to our best knowledge, and achieve a good agreement. We further derive the general form of the proposed model for the case of using multiple,pumps, which holds a potential to numerically predict the performance of complex wavelength multicasting, and essentially guide the waveguide designs.

New autofocus and reconstruction method based on a connected domain.

In this Letter, we propose a new method for auto-focusing and reconstruction without defocus noise in optical scanning holography. By using a connected domain (CD) to calculate the area of different domains, which are labeled by a connected component, the focus distance can be found via the smallest area of each CD. Meanwhile, the sectional images without defocus noise can also be reconstructed based on the labeled domains. The effectiveness of this method has been verified with a simulation and experiments.