RESUMEN
Extending the lifetime of power light-emitting diodes (LEDs) is achievable if proper control methods are implemented to reduce the side effects of an excessive junction temperature, TJ. The accuracy of state-of-the-art LED junction temperature monitoring techniques is negatively affected by several factors, such as the use of external sensors, calibration procedures, devices aging, and technological diversity among samples with the same part number. Here, a novel method is proposed, indeed based on the well-known technique consisting in tracking the LED forward voltage drop when a fixed forward current is imposed but exploiting the voltage variation with respect to room temperature. This method, which limits the effects of sample heterogeneity, is applied to a set of ten commercial devices. The method led to an effective reduction of the measurement error, which was below 1 °C.
RESUMEN
Hydrogenated amorphous silicon (a-Si:H) shows interesting optoelectronic and technological properties that make it suitable for the fabrication of passive and active micro-photonic devices, compatible moreover with standard microelectronic devices on a microchip. A temperature sensor based on a hydrogenated amorphous silicon p-i-n diode integrated in an optical waveguide for silicon photonics applications is presented here. The linear dependence of the voltage drop across the forward-biased diode on temperature, in a range from 30 °C up to 170 °C, has been used for thermal sensing. A high sensitivity of 11.9 mV/°C in the bias current range of 34-40 nA has been measured. The proposed device is particularly suitable for the continuous temperature monitoring of CMOS-compatible photonic integrated circuits, where the behavior of the on-chip active and passive devices are strongly dependent on their operating temperature.