RESUMEN
Random networks of single-walled carbon nanotubes (SWCNTs) offer new-form-factor electronics such as transparent, flexible, and intrinsically stretchable devices. However, the long-standing trade-off between carrier mobility and on/off ratio due to the coexistence of metallic and semiconducting nanotubes has limited the performance of SWCNT-random-network-based thin-film transistors (SWCNT TFTs), hindering their practical circuit-level applications. Methods for high-purity separation between metallic and semiconducting nanotubes have been proposed, but they require high cost and energy and are vulnerable to contamination and nanotube shortening, leading to performance degradation. Alternatively, additional structures have been proposed to reduce the off-state current, but they still compromise carrier mobility and suffer from inevitable expansion in device dimensions. Here, we propose a density-modulated SWCNT network using an inkjet-printing method as a facile approach that can achieve superior carrier mobility and a high on/off ratio simultaneously. By exploiting picoliter-scale drops on demand, we form a low-density channel network near the source and drain junctions and a high-density network at the middle of the channel. The modulated density profile forms a large band gap near the source and drain junctions that efficiently blocks electron injection under the reverse bias and a narrow band gap at the high-density area that facilitates the hole transport under the on-state bias. As a result, the density-modulated SWCNT TFTs show both high carrier mobility (27.02 cm2 V-1 s-1) and a high on/off ratio (>106). We also demonstrate all-inkjet-printed flexible inverter circuits whose gain is doubled by the density-modulated SWCNT TFTs, highlighting the feasibility of our approach for realizing high-performance flexible and conformable electronics.
RESUMEN
Development of technology for assembled single-walled carbon nanotube (SWCNT) film with the fine resolution is an essential technique for penetrating practical electronic applications. A promising approach is the assembly method by adding a chemical-functionalizing substrate to enhance affinity between the SWCNTs and the substrate. However, the various introduced approaches for solution-based assembly have suffered from low SWCNT deposition selectivity or low SWCNT deposition density. Herein, we demonstrated a facile method for selectively assembling semiconducting SWCNT network on the substrate. The substrate was prepared via a transfer printing of a poly-l-lysine (PLL)-coated poly(dimethylsiloxane) (PDMS) stamp. The thermal-assisted transfer method enabled an ultrafine PLL pattern (≤4 µm) and a high transfer yield (96.5%) by only one-time stamping without a change of the SWCNT-attracting nature. So, semiconducting SWCNTs were deposited on the patterned regions selectively and precisely. The benefit of the patterned semiconducting SWCNTs was lowering leakage current and turn-on voltage in the transfer characteristics by suppressing attachment of unnecessary SWCNT network. They showed excellent electrical performance, a log10(Ion/Ioff) ratio of 4.76, and an average value of linear field-effect mobility of 7.56 cm2/(V s). This research provides a simple but high-quality assembling technique of semiconducting SWCNTs, thereby improving the feasibility of solution-processed SWCNT-TFTs.
RESUMEN
We report an effective solution process to fabricate planarized photonic crystal substrates to enhance the outcoupling efficiency of organic light-emitting diodes (OLEDs). The photonic crystal structure was fabricated using nanoimprint lithography using a UV-curable acrylate and was planarized by using a ZnO layer formed by the solgel process. The solgel process resulted in a smooth surface, and OLEDs have been successfully integrated on the planarized photonic crystal layer with a low leakage current. The resulting light outcoupling efficiency was enhanced by 38% compared with that of conventional OLEDs, which is well matched with a theoretical prediction.
