Histologic Heterogeneity of Chondrosarcoma Reflected on Bone SPECT/CT.

ABSTRACT: Chondrosarcomas are a heterogeneous group of cartilage-forming tumors. The tumor is graded on areas demonstrating the highest grade. A 71-year-old man underwent bone SPECT/CT to investigate a tumorous lesion on his right femur. Correlating with the pathological findings, the high-grade area showed higher uptake in bone SPECT/CT. This case suggests that bone SPECT/CT could aid in selecting an optimal biopsy site for diagnosis, and determining the proper treatment of patients with suspected chondroid tumors.

Liquid phase IR detector based on the photothermal effect of reduced graphene oxide-doped liquid crystals.

Owing to the additional functionalities endowed by nanoparticle dopants, liquid crystals doped with nanoparticles are promising optical materials in a wide range of applications. In this study, we exploited the photothermal effect of reduced graphene oxide (rGO)-doped 5CB nematic liquid crystals (LC-rGO) to develop an infrared (IR) detector that is not only sensitive to IR but also measures the temperature and energy deposited in the detector. We demonstrate that rGO doping in LCs significantly enhances the IR absorption and transforms the light energy into thermal energy through the photothermal effect. The changes in the orientational order and birefringence of the LC-rGO induced by the photothermal effect under IR irradiation were manifested as an instantaneous color change in the white light probe beam. The change in the probe beam intensity was further translated into a temperature change and energy deposited in the detector. We also demonstrated that the external voltage applied to the detector significantly amplifies the photothermal responsivity by compensating for the anchoring energy of the LC. This study proposes a novel technology for detecting IR, temperature, and energy deposited in the detector by means of visible light, which has significant potential for developing large-area and high-resolution IR detectors by exploiting mature liquid crystal display technologies.

Multimodal Encapsulation to Selectively Permeate Hydrogen and Engineer Channel Conduction for p-Type SnOx Thin-Film Transistor Applications.

It has been challenging to synthesize p-type SnOx (1 < x < 2) and engineer the electrical properties such as carrier density and mobility due to the narrow processing window and the localized oxygen 2p orbitals near the valence band. Herein, we report on the multifunctional encapsulation of p-SnOx to limit the surface adsorption of oxygen and selectively permeate hydrogen into the p-SnOx channel for thin-film transistor (TFT) applications. Time-of-flight secondary ion mass spectrometry (ToF-SIMS) measurements identified that ultrathin SiO2 as a multifunctional encapsulation layer effectively suppressed the oxygen adsorption on the back channel surface of p-SnOx and selectively diffused hydrogen across the entire thickness of the channel. Encapsulated p-SnOx-based TFTs demonstrated much enhanced channel conductance modulation in response to the gate bias applied, featuring higher on-state current and lower off-state current (on/off ratio > 103), field effect mobility of 3.41 cm2/(V s), and threshold voltages of ∼5-10 V. The fabricated devices show minimal deviations as small as ±6% in the TFT performance parameters, which demonstrates good reproducibility of the fabrication process. The relevance between the TFT performance and the effects of hydrogen permeation is discussed in regard to the intrinsic and extrinsic doping mechanisms. Density functional theory calculations reveal that hydrogen-related impurity complexes are in charge of the enhanced channel conductance with gate biases, which further supports the selective permeation of hydrogen through a thin SiO2 encapsulation.

Layer-resolved release of epitaxial layers in III-V heterostructure via a buffer-free mechanical separation technique.

Layer-release techniques for producing freestanding III-V epitaxial layers have been actively developed for heterointegration of single-crystalline compound semiconductors with Si platforms. However, for the release of target epitaxial layers from III-V heterostructures, it is required to embed a mechanically or chemically weak sacrificial buffer beneath the target layers. This requirement severely limits the scope of processable materials and their epi-structures and makes the growth and layer-release process complicated. Here, we report that epitaxial layers in commonly used III-V heterostructures can be precisely released with an atomic-scale surface flatness via a buffer-free separation technique. This result shows that heteroepitaxial interfaces of a normal lattice-matched III-V heterostructure can be mechanically separated without a sacrificial buffer and the target interface for separation can be selectively determined by adjusting process conditions. This technique of selective release of epitaxial layers in III-V heterostructures will provide high fabrication flexibility in compound semiconductor technology.

Simultaneous Extraction of the Grain Size, Single-Crystalline Grain Sheet Resistance, and Grain Boundary Resistivity of Polycrystalline Monolayer Graphene.

The electrical properties of polycrystalline graphene grown by chemical vapor deposition (CVD) are determined by grain-related parameters-average grain size, single-crystalline grain sheet resistance, and grain boundary (GB) resistivity. However, extracting these parameters still remains challenging because of the difficulty in observing graphene GBs and decoupling the grain sheet resistance and GB resistivity. In this work, we developed an electrical characterization method that can extract the average grain size, single-crystalline grain sheet resistance, and GB resistivity simultaneously. We observed that the material property, graphene sheet resistance, could depend on the device dimension and developed an analytical resistance model based on the cumulative distribution function of the gamma distribution, explaining the effect of the GB density and distribution in the graphene channel. We applied this model to CVD-grown monolayer graphene by characterizing transmission-line model patterns and simultaneously extracted the average grain size (~5.95 µm), single-crystalline grain sheet resistance (~321 Ω/sq), and GB resistivity (~18.16 kΩ-µm) of the CVD-graphene layer. The extracted values agreed well with those obtained from scanning electron microscopy images of ultraviolet/ozone-treated GBs and the electrical characterization of graphene devices with sub-micrometer channel lengths.

High-Performance Oxide-Based p-n Heterojunctions Integrating p-SnOx and n-InGaZnO.

The fabrication of oxide-based p-n heterojunctions that exhibit high rectification performance has been difficult to realize using standard manufacturing techniques that feature mild vacuum requirements, low thermal budget processing, and scalability. Critical bottlenecks in the fabrication of these heterojunctions include the narrow processing window of p-type oxides and the charge-blocking performance across the metallurgical junction required for achieving low reverse current and hence high rectification behavior. The overarching goal of the present study is to demonstrate a simple processing route to fabricate oxide-based p-n heterojunctions that demonstrate high on/off rectification behavior, a low saturation current, and a small turn-on voltage. For this study, room-temperature sputter-deposited p-SnOx and n-InGaZnO (IGZO) films were chosen. SnOx is a promising p-type oxide material due to its monocationic system that limits complexities related to processing and properties, compared to other multicationic oxide materials. For the n-type oxide, IGZO is selected due to the knowledge that postprocessing annealing critically reduces the defect and trap densities in IGZO to ensure minimal interfacial recombination and high charge-blocking performance in the heterojunctions. The resulting oxide p-n heterojunction exhibits a high rectification ratio greater than 103 at ±3 V, a low saturation current of ∼2 × 10-10 A, and a small turn-on voltage of ∼0.5 V. In addition, the demonstrated oxide p-n heterojunctions exhibit excellent stability over time in air due to the p-SnOx with completed reaction annealing in air and the reduced trap density in n-IGZO.

Effect of Graphene Doping Level near the Metal Contact Region on Electrical and Photoresponse Characteristics of Graphene Photodetector.

Graphene-metal contact is crucial to fabricate high-performance graphene photodetectors since the external quantum efficiency (EQE) of the photodetector depends on the contact properties, and the influence of the contact properties is particularly dominant in short channel devices for high-speed applications. Moreover, junction properties between the channel graphene and graphene near the contact are also important to analyze the photoresponse because the built-in electric field in the junction determines the EQE of the photodetector. In this study, we investigated a relation between the photoresponse and the built-in electric field induced from the doping level difference in the junction between the channel graphene and graphene near the contact. The photoresponse could be enhanced with a high junction barrier height that is tuned by the doping level difference. In addition, we observed that the improved electrical characteristics of channel graphene do not guarantee the enhancement of the photoresponse characteristics of graphene photodetectors.

Camouflage treatment of posterior bite collapse in a patient with skeletal asymmetry by using posterior maxillary segmental osteotomy.

Orthodontic treatment of posterior bite collapse due to early loss of molars and the consequent drift of adjacent teeth is complicated. When the posterior bite collapse occurs in patients with facial asymmetry, both transverse and vertical compensation are necessary for camouflage orthodontic treatment. In such cases, posterior maxillary segmental osteotomy (PMSO) can be an effective alternative procedure that simplifies the orthodontic treatment and shows long-term stability through dental compensation within the alveolar bone housing. This case report aimed to describe the orthodontic treatment of maxillary occlusal plane canting caused by severely extruded maxillary teeth in a patient with skeletal facial asymmetry that was corrected with PMSO along with protraction of the lower second molar to replace the space of the extracted first molar. The treatment duration was 18 months, and stable results were obtained after 2 years of retention.

Short-term changes in muscle activity and jaw movement patterns after orthognathic surgery in skeletal Class III patients with facial asymmetry.

OBJECTIVE: To evaluate the short-term changes in masticatory muscle activity and mandibular movement patterns after orthognathic surgery in skeletal Class III patients with facial asymmetry. METHODS: Twenty-seven skeletal Class III adult patients were divided into two groups based on the degree of facial asymmetry: the experimental group (n = 17 [11 male and 6 female]; menton deviation ≥ 4 mm) and control group (n = 10 [4 male and 6 female]; menton deviation < 1.6 mm). Cephalography, electromyography (EMG) for the anterior temporalis (TA) and masseter muscles (MM), and mandibular movement (range of motion [ROM] and average chewing pattern [ACP]) were evaluated before (T0) and 7 to 8 months (T1) after the surgery. RESULTS: There were no significant postoperative changes in the EMG potentials of the TA and MM in both groups, except in the anterior cotton roll biting test, in which the masticatory muscle activity had changed into an MM-dominant pattern postoperatively in both groups. In the experimental group, the amount of maximum opening, protrusion, and lateral excursion to the non-deviated side were significantly decreased. The turning point tended to be shorter and significantly moved medially during chewing in the non-deviated side in the experimental group. CONCLUSIONS: In skeletal Class III patients with facial asymmetry, the EMG activity characteristics recovered to presurgical levels within 7 to 8 months after the surgery. Correction of the asymmetry caused limitation in jaw movement in terms of both ROM and ACP on the non-deviated side.

GaN-Based Ultraviolet Passive Pixel Sensor on Silicon (111) Substrate.

The fabrication of a single pixel sensor, which is a fundamental element device for the fabrication of an array-type pixel sensor, requires an integration technique of a photodetector and transistor on a wafer. In conventional GaN-based ultraviolet (UV) imaging devices, a hybrid-type integration process is typically utilized, which involves a backside substrate etching and a wafer-to-wafer bonding process. In this work, we developed a GaN-based UV passive pixel sensor (PPS) by integrating a GaN metal-semiconductor-metal (MSM) UV photodetector and a Schottky-barrier (SB) metal-oxide-semiconductor field-effect transistor (MOSFET) on an epitaxially grown GaN layer on silicon substrate. An MSM-type UV sensor had a low dark current density of 3.3 × 10-7 A/cm² and a high UV/visible rejection ratio of 10³. The GaN SB-MOSFET showed a normally-off operation and exhibited a maximum drain current of 0.5 mA/mm and a maximum transconductance of 30 µS/mm with a threshold voltage of 4.5 V. The UV PPS showed good UV response and a high dark-to-photo contrast ratio of 10³ under irradiation of 365-nm UV. This integration technique will provide one possible way for a monolithic integration of the GaN-based optoelectronic devices.

Optimized poly(methyl methacrylate)-mediated graphene-transfer process for fabrication of high-quality graphene layer.

Graphene grown on a copper (Cu) substrate by chemical vapor deposition (CVD) is typically required to be transferred to another substrate for the fabrication of various electrical devices. PMMA-mediated wet process is the most widely used method for CVD-graphene-transfer. However, PMMA residue and wrinkles that inevitably remain on the graphene surface during the transfer process are critical issues degrading the electrical properties of graphene. In this paper, we report on a PMMA-mediated graphene-transfer method that can effectively reduce the density and size of the PMMA residue and the height of wrinkles on the transferred graphene layer. We found out that acetic acid is the most effective PMMA stripper among the typically used solutions to remove the PMMA residue. In addition, we observed that an optimized annealing process can reduce the height of the wrinkles on the transferred graphene layer without degrading the graphene quality. The effects of the suggested wet transfer process were also investigated by evaluating the electrical properties of field-effect transistors fabricated on the transferred graphene layer. The results of this work will contribute to the development of fabrication processes for high-quality graphene devices, given that the transfer of graphene from the Cu substrate is essential process to the application of CVD-graphene.

Selectively Enhanced UV-A Photoresponsivity of a GaN MSM UV Photodetector with a Step-Graded AlxGa1-xN Buffer Layer.

The UV-to-visible rejection ratio is one of the important figure of merits of GaN-based UV photodetectors. For cost-effectiveness and large-scale fabrication of GaN devices, we tried to grow a GaN epitaxial layer on silicon substrate with complicated buffer layers for a stress-release. It is known that the structure of the buffer layers affects the performance of devices fabricated on the GaN epitaxial layers. In this study, we show that the design of a buffer layer structure can make effect on the UV-to-visible rejection ratio of GaN UV photodetectors. The GaN photodetector fabricated on GaN-on-silicon substrate with a step-graded AlxGa-xN buffer layer has a highly-selective photoresponse at 365-nm wavelength. The UV-to-visible rejection ratio of the GaN UV photodetector with the step-graded AlxGa1-xN buffer layer was an order-of-magnitude higher than that of a photodetector with a conventional GaN/AlN multi buffer layer. The maximum photoresponsivity was as high as 5 × 10-² A/W. This result implies that the design of buffer layer is important for photoresponse characteristics of GaN UV photodetectors as well as the crystal quality of the GaN epitaxial layers.

Unveiling the carrier transport mechanism in epitaxial graphene for forming wafer-scale, single-domain graphene.

Graphene epitaxy on the Si face of a SiC wafer offers monolayer graphene with unique crystal orientation at the wafer-scale. However, due to carrier scattering near vicinal steps and excess bilayer stripes, the size of electrically uniform domains is limited to the width of the terraces extending up to a few microns. Nevertheless, the origin of carrier scattering at the SiC vicinal steps has not been clarified so far. A layer-resolved graphene transfer (LRGT) technique enables exfoliation of the epitaxial graphene formed on SiC wafers and transfer to flat Si wafers, which prepares crystallographically single-crystalline monolayer graphene. Because the LRGT flattens the deformed graphene at the terrace edges and permits an access to the graphene formed at the side wall of vicinal steps, components that affect the mobility of graphene formed near the vicinal steps of SiC could be individually investigated. Here, we reveal that the graphene formed at the side walls of step edges is pristine, and scattering near the steps is mainly attributed by the deformation of graphene at step edges of vicinalized SiC while partially from stripes of bilayer graphene. This study suggests that the two-step LRGT can prepare electrically single-domain graphene at the wafer-scale by removing the major possible sources of electrical degradation.

Treatment of vertical maxillary excess without open bite in a skeletal Class II hyperdivergent patient.

A 20-year-old woman visited the office complaining of a gummy smile and lip protrusion. She was diagnosed with vertical maxillary excess without open bite and skeletal Class II hyperdivergent pattern. She refused the surgical-orthodontic treatment option, although she wanted to correct the gummy smile and retruded chin. Differential intrusion of anterior and posterior teeth in both arches was necessary to maximize the skeletal treatment effects. In the maxilla, one palatal temporary anchorage device (TAD), an archwire with an accentuated curve of Spee, and a transpalatal arch were applied. In the mandible, an archwire with a reverse curve of Spee and two vertically positioned TADs were used. These simple mechanics contributed to the effective intrusion of the total upper and lower arches, correction of the gummy smile, and mandibular counterclockwise rotation, offering an alternative to orthognathic surgery for this patient.

Physically unclonable cryptographic primitives using self-assembled carbon nanotubes.

Information security underpins many aspects of modern society. However, silicon chips are vulnerable to hazards such as counterfeiting, tampering and information leakage through side-channel attacks (for example, by measuring power consumption, timing or electromagnetic radiation). Single-walled carbon nanotubes are a potential replacement for silicon as the channel material of transistors due to their superb electrical properties and intrinsic ultrathin body, but problems such as limited semiconducting purity and non-ideal assembly still need to be addressed before they can deliver high-performance electronics. Here, we show that by using these inherent imperfections, an unclonable electronic random structure can be constructed at low cost from carbon nanotubes. The nanotubes are self-assembled into patterned HfO2 trenches using ion-exchange chemistry, and the width of the trench is optimized to maximize the randomness of the nanotube placement. With this approach, two-dimensional (2D) random bit arrays are created that can offer ternary-bit architecture by determining the connection yield and switching type of the nanotube devices. As a result, our cryptographic keys provide a significantly higher level of security than conventional binary-bit architecture with the same key size.

Three-dimensional analysis of molar compensation in patients with facial asymmetry and mandibular prognathism.

OBJECTIVE: To evaluate the characteristic transverse dental compensations in patients with facial asymmetry and mandibular prognathism and to compare features of dental compensations between two types of mandibular asymmetry using 3-dimensional (3D) cone-beam computed tomography (CBCT). MATERIALS AND METHODS: Seventy-eight adult patients with skeletal Class I (control group; n  =  33; 19 men and 14 women) or skeletal Class III with facial asymmetry (experimental group; n  =  45; 23 men and 22 women) were included. The experimental group was subdivided into two groups according to the type of mandibular asymmetry: translation type (T-type; n  =  20) and roll type (R-type; n  =  19). CBCT images were acquired before orthodontic treatment and 3D analyses were performed. RESULTS: The transverse dental distance was significantly different between the two groups only at the palatal root apex of the maxillary first molar (P < .05). In the experimental group, the first molar axes were compensated significantly on both arches except the maxillary nondeviated side. The vertical molar heights were different between the two groups only on the maxillary arch (P < .001). The R-type showed greater mandibular ramal length difference and menton deviation than the T-type (P < .001). In the R-type, transverse compensation of the maxillary first molars was more obvious than with the T-type, which resulted in canting in the maxillary occlusal plane. CONCLUSIONS: Mandibular asymmetry with prognathism showed a characteristic transverse dental compensation pattern. The mandibular asymmetry type influenced the amount and direction of molar compensation on the maxillary arch.

Principle of direct van der Waals epitaxy of single-crystalline films on epitaxial graphene.

There are numerous studies on the growth of planar films on sp(2)-bonded two-dimensional (2D) layered materials. However, it has been challenging to grow single-crystalline films on 2D materials due to the extremely low surface energy. Recently, buffer-assisted growth of crystalline films on 2D layered materials has been introduced, but the crystalline quality is not comparable with the films grown on sp(3)-bonded three-dimensional materials. Here we demonstrate direct van der Waals epitaxy of high-quality single-crystalline GaN films on epitaxial graphene with low defectivity and surface roughness comparable with that grown on conventional SiC or sapphire substrates. The GaN film is released and transferred onto arbitrary substrates. The post-released graphene/SiC substrate is reused for multiple growth and transfer cycles of GaN films. We demonstrate fully functional blue light-emitting diodes (LEDs) by growing LED stacks on reused graphene/SiC substrates followed by transfer onto plastic tapes.

Toward high-performance digital logic technology with carbon nanotubes.

The slow-down in traditional silicon complementary metal-oxide-semiconductor (CMOS) scaling (Moore's law) has created an opportunity for a disruptive innovation to bring the semiconductor industry into a postsilicon era. Due to their ultrathin body and ballistic transport, carbon nanotubes (CNTs) have the intrinsic transport and scaling properties to usher in this new era. The remaining challenges are largely materials-related and include obtaining purity levels suitable for logic technology, placement of CNTs at very tight (∼5 nm) pitch to allow for density scaling and source/drain contact scaling. This review examines the potential performance advantages of a CNT-based computing technology, outlines the remaining challenges, and describes the recent progress on these fronts. Although overcoming these issues will be challenging and will require a large, sustained effort from both industry and academia, the recent progress in the field is a cause for optimism that these materials can have an impact on future technologies.

9.4% efficient amorphous silicon solar cell on high aspect-ratio glass microcones.

High aspect-ratio three-dimensional (3D) a-Si:H solar cells have been fabricated to enhance a light absorption path while maintaining a short carrier collection length. Substantial efficiency enhancement in 3D solar cells was achieved due to the boost in JSC with no degradation of FF which is comparable to FF obtained from 2D solar cells.

Layer-resolved graphene transfer via engineered strain layers.

The performance of optimized graphene devices is ultimately determined by the quality of the graphene itself. Graphene grown on copper foils is often wrinkled, and the orientation of the graphene cannot be controlled. Graphene grown on SiC(0001) via the decomposition of the surface has a single orientation, but its thickness cannot be easily limited to one layer. We describe a method in which a graphene film of one or two monolayers grown on SiC is exfoliated via the stress induced with a Ni film and transferred to another substrate. The excess graphene is selectively removed with a second exfoliation process with a Au film, resulting in a monolayer graphene film that is continuous and single-oriented.