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1.
Adv Mater ; 35(47): e2304624, 2023 Nov.
Artículo en Inglés | MEDLINE | ID: mdl-37707242

RESUMEN

Understanding the emergent electronic structure in twisted atomically thin layers has led to the exciting field of twistronics. However, practical applications of such systems are challenging since the specific angular correlations between the layers must be precisely controlled and the layers have to be single crystalline with uniform atomic ordering. Here, an alternative, simple, and scalable approach is suggested, where nanocrystallinetwo-dimensional (2D) film on 3D substrates yields twisted-interface-dependent properties. Ultrawide-bandgap hexagonal boron nitride (h-BN) thin films are directly grown on high in-plane lattice mismatched wide-bandgap silicon carbide (4H-SiC) substrates to explore the twist-dependent structure-property correlations. Concurrently, nanocrystalline h-BN thin film shows strong non-linear second-harmonic generation and ultra-low cross-plane thermal conductivity at room temperature, which are attributed to the twisted domain edges between van der Waals stacked nanocrystals with random in-plane orientations. First-principles calculations based on time-dependent density functional theory manifest strong even-order optical nonlinearity in twisted h-BN layers. This work unveils that directly deposited 2D nanocrystalline thin film on 3D substrates could provide easily accessible twist-interfaces, therefore enabling a simple and scalable approach to utilize the 2D-twistronics integrated in 3D material devices for next-generation nanotechnology.

2.
ACS Appl Mater Interfaces ; 15(33): 39980-39988, 2023 Aug 23.
Artículo en Inglés | MEDLINE | ID: mdl-37555428

RESUMEN

Diamond surface functionalization has received significant research interest recently. Specifically, H-termination has been widely adopted because it endows the diamond surface with negative electron affinity and the hole carrier is injected in the presence of surface transfer dopants. Exploring different functional groups' attachment on diamond surfaces and their impact on the electronic structure, using wet and dry chemical approaches, would hence be of interest in engineering diamond as a semiconductor. Here, we report the functionalization of the H-terminated diamond surface with nitrogen and sulfur heteroatoms. Surface characterization of functionalized diamond surfaces shows that these groups are well-distributed and covalently bonded to diamonds. Four chemical functional groups (-SH, -S-S-, -S-O, and -S=O) were found on the sulfurized diamond surface, and two groups (-NH2 and =NH) upon amination. We also report co-functionalization of surface with N and S (N-S), where sulfurization promotes sequential amination efficiency with reduced exposure time. Electrical measurement shows that heteroatom-modified diamond surfaces possess higher conductivity than H-terminated diamonds. Density functional theory (DFT) shows that upon functionalization with various N/S ratios, the conduction band minimum and valence band maximum downshift, which lowers the bandgap in comparison to an H-terminated diamond. These observations suggest the possibility of heteroatom functionalizations with enhanced surface electrical conductivity on the diamond that are useful for various electronic applications.

3.
Nano Lett ; 23(15): 6927-6936, 2023 Aug 09.
Artículo en Inglés | MEDLINE | ID: mdl-37489836

RESUMEN

Boron nitride (BN) is an exceptional material, and among its polymorphs, two-dimensional (2D) hexagonal and three-dimensional (3D) cubic BN (h-BN and c-BN) phases are most common. The phase stability regimes of these BN phases are still under debate, and phase transformations of h-BN/c-BN remain a topic of interest. Here, we investigate the phase stability of 2D/3D h-BN/c-BN nanocomposites and show that the coexistence of two phases can lead to strong nonlinear optical properties and low thermal conductivity at room temperature. Furthermore, spark-plasma sintering of the nanocomposite shows complete phase transformation to 2D h-BN with improved crystalline quality, where 3D c-BN possibly governs the nucleation and growth kinetics. Our demonstration might be insightful in phase engineering of BN polymorph-based nanocomposites with desirable properties for optoelectronics and thermal energy management applications.

4.
ACS Appl Mater Interfaces ; 11(20): 18517-18527, 2019 May 22.
Artículo en Inglés | MEDLINE | ID: mdl-31042348

RESUMEN

The development of electronic devices, especially those that involve heterogeneous integration of materials, has led to increased challenges in addressing their thermal operational temperature demands. The heat flow in these systems is significantly influenced or even dominated by thermal boundary resistance at the interface between dissimilar materials. However, controlling and tuning heat transport across an interface and in the adjacent materials has so far drawn limited attention. In this work, we grow chemical vapor-deposited diamond on silicon substrates by graphoepitaxy and experimentally demonstrate tunable thermal transport across diamond membranes and diamond-silicon interfaces. We observed the highest diamond-silicon thermal boundary conductance (TBC) measured to date and increased diamond thermal conductivity due to strong grain texturing in the diamond near the interface. Additionally, nonequilibrium molecular dynamics simulations and a Landauer approach are used to understand the diamond-silicon TBC. These findings pave the way for tuning or increasing thermal conductance in heterogeneously integrated electronics that involve polycrystalline materials and will impact applications including electronics thermal management and diamond growth.

5.
Photochem Photobiol Sci ; 18(6): 1526-1532, 2019 Jun 12.
Artículo en Inglés | MEDLINE | ID: mdl-30984955

RESUMEN

The large standard reduction potential of an aqueous solvated electron (eaq-, E° = -2.9 V) makes it an attractive candidate for reductive treatment of wastewater contaminants. Using transient absorption spectroscopy, the nanosecond to microsecond dynamics of eaq- generated from 10 mM solutions of Na2SO3 at pH 4 to 11 in H2O and D2O are characterized, resulting in the determination that between pH 4 and 9 it is the HSO3-, and not H+ as previously postulated by others, that effectively quenches eaq-. The observed bimolecular quenching rate constant (k = 1.2 × 108 M-1 s-1) for eaq- deactivation by HSO3- is found to be consistent with a Brønsted acid catalysis mechanism resulting in formation of H˙ and SO32-. A large solvent isotope effect is observed from the lifetimes of the eaq- in H2O compared to D2O (kH2O/kD2O = 4.4). In addition, the bimolecular rate constant for eaq- deactivation by DSO3- (k = 2.7 × 107 M-1 s-1) is found to be an order of magnitude lower than by HSO3-. These results highlight the role of acids, such as HSO3-, in competition with organic contaminant targets for eaq- and, by extension, that knowledge of the pKa of eaq- sources can be a predictive measure of the effective pH range for the treatment of wastewater contaminants.

6.
Nano Lett ; 11(10): 4304-8, 2011 Oct 12.
Artículo en Inglés | MEDLINE | ID: mdl-21913676

RESUMEN

We present the first nanomechanical resonators microfabricated in single-crystal diamond. Shell-type resonators only 70 nm thick, the thinnest single crystal diamond structures produced to date, demonstrate a high-quality factor (Q ≈ 1000 at room temperature, Q ≈ 20 000 at 10 K) at radio frequencies (50-600 MHz). Quality factor dependence on temperature and frequency suggests an extrinsic origin to the dominant dissipation mechanism and methods to further enhance resonator performance.

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