Computational analysis of the optical response of ZnSe with d-orbital defects.

The doping of wide band-gap semiconducting ZnSe by transition metal (TM) atoms finds applications from mid-infrared lasing, sensing, photoelectrochemical cells, to nonlinear optics. Yet understanding the response of these materials at the atomic and electronic level is lacking, particularly in comparing a range of TM dopants, which were studied primarily by phenomenological crystal-field theory. In this work, to investigate bulk ZnSe singly doped with first-row TM atoms, specifically Ti through Cu, we applied a first-principles approach and crystal-field theory to explain the origin of the infrared absorption. We show that the use of an appropriate exchange-correlation functional and a HubbardUcorrection to account for electron correlation improved the determination of the electronic transitions in these systems. We outline an approach for the calculation of the crystal-field splitting from first-principles and find it useful in providing a measure of dopant effects, also in qualitative comparison to our experimental characterization for ZnSe doped with Fe, Cr, and Ni. Our calculated absorption spectra indicate absorption signatures in the mid-infrared range, while the absorption in the visible portion of the spectrum is attributed to the ZnSe host. Our calculations will potentially motivate further experimental exploration of TM-doped ZnSe. Finally, the methods used here provide a route towards computational high-throughput screening of TM dopants in III-V materials through a combination of the electronic band structure and crystal-field theory.

ABINIT: Overview and focus on selected capabilities.

abinit is probably the first electronic-structure package to have been released under an open-source license about 20 years ago. It implements density functional theory, density-functional perturbation theory (DFPT), many-body perturbation theory (GW approximation and Bethe-Salpeter equation), and more specific or advanced formalisms, such as dynamical mean-field theory (DMFT) and the "temperature-dependent effective potential" approach for anharmonic effects. Relying on planewaves for the representation of wavefunctions, density, and other space-dependent quantities, with pseudopotentials or projector-augmented waves (PAWs), it is well suited for the study of periodic materials, although nanostructures and molecules can be treated with the supercell technique. The present article starts with a brief description of the project, a summary of the theories upon which abinit relies, and a list of the associated capabilities. It then focuses on selected capabilities that might not be present in the majority of electronic structure packages either among planewave codes or, in general, treatment of strongly correlated materials using DMFT; materials under finite electric fields; properties at nuclei (electric field gradient, Mössbauer shifts, and orbital magnetization); positron annihilation; Raman intensities and electro-optic effect; and DFPT calculations of response to strain perturbation (elastic constants and piezoelectricity), spatial dispersion (flexoelectricity), electronic mobility, temperature dependence of the gap, and spin-magnetic-field perturbation. The abinit DFPT implementation is very general, including systems with van der Waals interaction or with noncollinear magnetism. Community projects are also described: generation of pseudopotential and PAW datasets, high-throughput calculations (databases of phonon band structure, second-harmonic generation, and GW computations of bandgaps), and the library libpaw. abinit has strong links with many other software projects that are briefly mentioned.

Electron-Beam Manipulation of Silicon Dopants in Graphene.

The direct manipulation of individual atoms in materials using scanning probe microscopy has been a seminal achievement of nanotechnology. Recent advances in imaging resolution and sample stability have made scanning transmission electron microscopy a promising alternative for single-atom manipulation of covalently bound materials. Pioneering experiments using an atomically focused electron beam have demonstrated the directed movement of silicon atoms over a handful of sites within the graphene lattice. Here, we achieve a much greater degree of control, allowing us to precisely move silicon impurities along an extended path, circulating a single hexagon, or back and forth between the two graphene sublattices. Even with manual operation, our manipulation rate is already comparable to the state-of-the-art in any atomically precise technique. We further explore the influence of electron energy on the manipulation rate, supported by improved theoretical modeling taking into account the vibrations of atoms near the impurities, and implement feedback to detect manipulation events in real time. In addition to atomic-level engineering of its structure and properties, graphene also provides an excellent platform for refining the accuracy of quantitative models and for the development of automated manipulation.