Fast current-induced skyrmion motion in synthetic antiferromagnets.

Magnetic skyrmions are topological magnetic textures that hold great promise as nanoscale bits of information in memory and logic devices. Although room-temperature ferromagnetic skyrmions and their current-induced manipulation have been demonstrated, their velocity has been limited to about 100 meters per second. In addition, their dynamics are perturbed by the skyrmion Hall effect, a motion transverse to the current direction caused by the skyrmion topological charge. Here, we show that skyrmions in compensated synthetic antiferromagnets can be moved by current along the current direction at velocities of up to 900 meters per second. This can be explained by the cancellation of the net topological charge leading to a vanishing skyrmion Hall effect. Our results open an important path toward the realization of logic and memory devices based on the fast manipulation of skyrmions in tracks.

Electrical Detection and Nucleation of a Magnetic Skyrmion in a Magnetic Tunnel Junction Observed via Operando Magnetic Microscopy.

Magnetic skyrmions are topological spin textures which are envisioned as nanometer scale information carriers in magnetic memory and logic devices. The recent demonstrations of room temperature skyrmions and their current induced manipulation in ultrathin films were first steps toward the realization of such devices. However, important challenges remain regarding the electrical detection and the low-power nucleation of skyrmions, which are required for the read and write operations. Here, we demonstrate, using operando magnetic microscopy experiments, the electrical detection of a single magnetic skyrmion in a magnetic tunnel junction (MTJ) and its nucleation and annihilation by gate voltage via voltage control of magnetic anisotropy. The nucleated skyrmion can be manipulated by both gate voltages and external magnetic fields, leading to tunable intermediate resistance states. Our results unambiguously demonstrate the readout and voltage controlled write operations in a single MTJ device, which is a major milestone for low power skyrmion based technologies.

Improving Néel Domain Walls Dynamics and Skyrmion Stability Using He Ion Irradiation.

Ion irradiation with light ions is an appealing way to finely tune the magnetic properties of thin magnetic films and in particular the perpendicular magnetic anisotropy (PMA). In this work, the effect of He+ irradiation on the magnetization reversal and on the domain wall dynamics  of Pt/Co/AlOx trilayers is illustrated. Fluences up to 1.5 × 1015 ions cm-2 strongly decrease the PMA, without affecting neither the spontaneous magnetization nor the strength of the interfacial Dzyaloshinskii-Moriya interaction (DMI). This confirms experimentally the robustness of the DMI interaction against interfacial chemical intermixing, already predicted by theory. In parallel with the decrease of the PMA, a strong decrease of the domain wall depinning field is observed after irradiation. This allows the domain walls to reach large maximum velocities with a lower magnetic field compared to that needed for the pristine films. Decoupling PMA from DMI can, therefore, be beneficial for the design of low energy devices based on domain wall dynamics. When the samples are irradiated with larger He+ fluences, the magnetization gets close to the out-of-plane/in-plane reorientation transition, where ≈100nm size magnetic skyrmions are stabilized. It is observed that as the He+ fluence increases, the skyrmion size decreases while these magnetic textures become more stable against the application of an external magnetic field, as predicted by theoretical models developed for ultrathin films with labyrinthine domains.

Gate-controlled skyrmion and domain wall chirality.

Magnetic skyrmions are localized chiral spin textures, which offer great promise to store and process information at the nanoscale. In the presence of asymmetric exchange interactions, their chirality, which governs their dynamics, is generally considered as an intrinsic parameter set during the sample deposition. In this work, we experimentally demonstrate that a gate voltage can control this key parameter. We probe the chirality of skyrmions and chiral domain walls by observing the direction of their current-induced motion and show that a gate voltage can reverse it. This local and dynamical reversal of the chirality is due to a sign inversion of the interfacial Dzyaloshinskii-Moriya interaction that we attribute to ionic migration of oxygen under gate voltage. Micromagnetic simulations show that the chirality reversal is a continuous transformation, in which the skyrmion is conserved. This control of chirality with 2-3 V gate voltage can be used for skyrmion-based logic devices, yielding new functionalities.

Kinetics of Ion Migration in the Electric Field-Driven Manipulation of Magnetic Anisotropy of Pt/Co/Oxide Multilayers.

Magneto-ionics is a fast developing research field which opens the perspective of energy efficient magnetic devices, where the magnetization direction is controlled by an electric field which drives the migration of ionic species. In this work, the interfacial perpendicular magnetic anisotropy (PMA) of Pt/Co/oxide stacks covered by ZrO2 , acting as a ionic conductor, is tuned by a gate voltage at room temperature. A large variation of the PMA is obtained by modifying the oxidation of the cobalt layer through the migration of oxygen ions: the easy magnetization axis can be switched reversibly from in-plane, with under-oxidized Co, to in-plane, with over-oxidized Co, passing through an out-of-plane magnetization state. The switching time between the different magnetic states is limited by the ion drift velocity. This depends exponentially on the gate voltage, and is varied by over five orders of magnitude, from several minutes to a few ms. The variation of the PMA versus time during the application of the gate voltage can be modeled with a parabolic variation of the PMA and an exponential decrease of the Co oxidation rate. The possibility to explain the observed effect with a simple theoretical model opens the possibility to engineer materials with optimized properties.

Current-Driven Domain Wall Dynamics in Ferrimagnetic Nickel-Doped Mn4N Films: Very Large Domain Wall Velocities and Reversal of Motion Direction across the Magnetic Compensation Point.

Spin-transfer torque (STT) and spin-orbit torque (SOT) are spintronic phenomena allowing magnetization manipulation using electrical currents. Beyond their fundamental interest, they allow developing new classes of magnetic memories and logic devices, in particular based on domain wall (DW) motion. In this work, we report the study of STT-driven DW motion in ferrimagnetic manganese nickel nitride (Mn4-xNixN) films, in which magnetization and angular momentum compensation can be obtained by the fine adjustment of the Ni content. Large domain wall velocities, approaching 3000 m/s, are measured for Ni compositions close to the angular momentum compensation point. The reversal of the DW motion direction, observed when the compensation composition is crossed, is related to the change of direction of the angular momentum with respect to that of the spin polarization. This is confirmed by the results of ab initio band structure calculations.

Large Current Driven Domain Wall Mobility and Gate Tuning of Coercivity in Ferrimagnetic Mn4N Thin Films.

Spintronics, which is the basis of a low-power, beyond-CMOS technology for computational and memory devices, remains up to now entirely based on critical materials such as Co, heavy metals and rare-earths. Here, we show that Mn4N, a rare-earth free ferrimagnet made of abundant elements, is an exciting candidate for the development of sustainable spintronics devices. Mn4N thin films grown epitaxially on SrTiO3 substrates possess remarkable properties, such as a perpendicular magnetization, a very high extraordinary Hall angle (2%) and smooth domain walls at the millimeter scale. Moreover, domain walls can be moved at record speeds by spin-polarized currents, in absence of spin-orbit torques. This can be explained by the large efficiency of the adiabatic spin transfer torque, due to the conjunction of a reduced magnetization and a large spin polarization. Finally, we show that the application of gate voltages through the SrTiO3 substrates allows modulating the Mn4N coercive field with a large efficiency.

Unraveling Dzyaloshinskii-Moriya Interaction and Chiral Nature of Graphene/Cobalt Interface.

A major challenge for future spintronics is to develop suitable spin transport channels with long spin lifetime and propagation length. Graphene can meet these requirements, even at room temperature. On the other side, taking advantage of the fast motion of chiral textures, that is, Néel-type domain walls and magnetic skyrmions, can satisfy the demands for high-density data storage, low power consumption, and high processing speed. We have engineered epitaxial structures where an epitaxial ferromagnetic Co layer is sandwiched between an epitaxial Pt(111) buffer grown in turn onto MgO(111) substrates and a graphene layer. We provide evidence of a graphene-induced enhancement of the perpendicular magnetic anisotropy up to 4 nm thick Co films and of the existence of chiral left-handed Néel-type domain walls stabilized by the effective Dzyaloshinskii-Moriya interaction (DMI) in the stack. The experiments show evidence of a sizable DMI at the gr/Co interface, which is described in terms of a conduction electron mediated Rashba-DMI mechanism and points opposite to the spin orbit coupling-induced DMI at the Co/Pt interface. In addition, the presence of graphene results in (i) a surfactant action for the Co growth, producing an intercalated, flat, highly perfect face-centered cubic film, pseudomorphic with Pt and (ii) an efficient protection from oxidation. The magnetic chiral texture is stable at room temperature and grown on insulating substrate. Our findings open new routes to control chiral spin structures using interfacial engineering in graphene-based systems for future spin-orbitronics devices fully integrated on oxide substrates.

Velocity Enhancement by Synchronization of Magnetic Domain Walls.

Magnetic domain walls are objects whose dynamics is inseparably connected to their structure. In this Letter, we investigate magnetic bilayers, which are engineered such that a coupled pair of domain walls, one in each layer, is stabilized by a cooperation of Dzyaloshinskii-Moriya interaction and flux-closing mechanism. The dipolar field mediating the interaction between the two domain walls links not only their position but also their structure. We show that this link has a direct impact on their magnetic-field-induced dynamics. We demonstrate that in such a system the coupling leads to an increased domain wall velocity with respect to single domain walls. Since the domain wall dynamics is observed in a precessional regime, the dynamics involves the synchronization between the two walls to preserve the flux closure during motion. Properties of these coupled oscillating walls can be tuned by an additional in-plane magnetic field enabling a rich variety of states, from perfect synchronization to complete detuning.

Large-Voltage Tuning of Dzyaloshinskii-Moriya Interactions: A Route toward Dynamic Control of Skyrmion Chirality.

Electric control of magnetism is a prerequisite for efficient and low-power spintronic devices. More specifically, in heavy metal-ferromagnet-insulator heterostructures, voltage gating has been shown to locally and dynamically tune magnetic properties such as interface anisotropy and saturation magnetization. However, its effect on interfacial Dzyaloshinskii-Moriya Interaction (DMI), which is crucial for the stability of magnetic skyrmions, has been challenging to achieve and has not been reported yet for ultrathin films. Here, we demonstrate a 130% variation of DMI with electric field in Ta/FeCoB/TaO x trilayer through Brillouin Light Spectroscopy (BLS). Using polar magneto-optical Kerr-effect microscopy, we further show a monotonic variation of DMI and skyrmionic bubble size with electric field with an unprecedented efficiency. We anticipate through our observations that a sign reversal of DMI with an electric field is possible, leading to a chirality switch. This dynamic manipulation of DMI establishes an additional degree of control to engineer programmable skyrmion-based memory or logic devices.

Corrigendum: Room-temperature chiral magnetic skyrmions in ultrathin magnetic nanostructures.

This corrects the article DOI: 10.1038/nnano.2015.315.

The Skyrmion Switch: Turning Magnetic Skyrmion Bubbles on and off with an Electric Field.

Nanoscale magnetic skyrmions are considered as potential information carriers for future spintronics memory and logic devices. Such applications will require the control of their local creation and annihilation, which involves so far solutions that are either energy consuming or difficult to integrate. Here we demonstrate the control of skyrmion bubbles nucleation and annihilation using electric field gating, an easily integrable and potentially energetically efficient solution. We present a detailed stability diagram of the skyrmion bubbles in a Pt/Co/oxide trilayer and show that their stability can be controlled via an applied electric field. An analytical bubble model with the Dzyaloshinskii-Moriya interaction imbedded in the domain wall energy accounts for the observed electrical skyrmion switching effect. This allows us to unveil the origin of the electrical control of skyrmions stability and to show that both magnetic dipolar interaction and the Dzyaloshinskii-Moriya interaction play an important role in the skyrmion bubble stabilization.

Room-temperature chiral magnetic skyrmions in ultrathin magnetic nanostructures.

Magnetic skyrmions are chiral spin structures with a whirling configuration. Their topological properties, nanometre size and the fact that they can be moved by small current densities have opened a new paradigm for the manipulation of magnetization at the nanoscale. Chiral skyrmion structures have so far been experimentally demonstrated only in bulk materials and in epitaxial ultrathin films, and under an external magnetic field or at low temperature. Here, we report on the observation of stable skyrmions in sputtered ultrathin Pt/Co/MgO nanostructures at room temperature and zero external magnetic field. We use high lateral resolution X-ray magnetic circular dichroism microscopy to image their chiral Néel internal structure, which we explain as due to the large strength of the Dzyaloshinskii-Moriya interaction as revealed by spin wave spectroscopy measurements. Our results are substantiated by micromagnetic simulations and numerical models, which allow the identification of the physical mechanisms governing the size and stability of the skyrmions.

Spin-orbit torque magnetization switching controlled by geometry.

Magnetization reversal by an electric current is essential for future magnetic data storage technology, such as magnetic random access memories. Typically, an electric current is injected into a pillar-shaped magnetic element, and switching relies on the transfer of spin momentum from a ferromagnetic reference layer (an approach known as spin-transfer torque). Recently, an alternative technique has emerged that uses spin-orbit torque (SOT) and allows the magnetization to be reversed without a polarizing layer by transferring angular momentum directly from the crystal lattice. With spin-orbit torque, the current is no longer applied perpendicularly, but is in the plane of the magnetic thin film. Therefore, the current flow is no longer restricted to a single direction and can have any orientation within the film plane. Here, we use Kerr microscopy to examine spin-orbit torque-driven domain wall motion in Co/AlOx wires with different shapes and orientations on top of a current-carrying Pt layer. The displacement of the domain walls is found to be highly dependent on the angle between the direction of the current and domain wall motion, and asymmetric and nonlinear with respect to the current polarity. Using these insights, devices are fabricated in which magnetization switching is determined entirely by the geometry of the device.

Fast current-induced domain-wall motion controlled by the Rashba effect.

The propagation of magnetic domain walls induced by spin-polarized currents has launched new concepts for memory and logic devices. A wave of studies focusing on permalloy (NiFe) nanowires has found evidence for high domain-wall velocities (100 m s(-1); refs,), but has also exposed the drawbacks of this phenomenon for applications. Often the domain-wall displacements are not reproducible, their depinning from a thermally stable position is difficult and the domain-wall structural instability (Walker breakdown) limits the maximum velocity. Here, we show that the combined action of spin-transfer and spin-orbit torques offers a comprehensive solution to these problems. In an ultrathin Co nanowire, integrated in a trilayer with structural inversion asymmetry (SIA), the high spin-torque efficiency facilitates the depinning and leads to high mobility, while the SIA-mediated Rashba field controlling the domain-wall chirality stabilizes the Bloch domain-wall structure. Thus, the high-mobility regime is extended to higher current densities, allowing domain-wall velocities up to 400 m s(-1).

Current-driven spin torque induced by the Rashba effect in a ferromagnetic metal layer.

Methods to manipulate the magnetization of ferromagnets by means of local electric fields or current-induced spin transfer torque allow the design of integrated spintronic devices with reduced dimensions and energy consumption compared with conventional magnetic field actuation. An alternative way to induce a spin torque using an electric current has been proposed based on intrinsic spin-orbit magnetic fields and recently realized in a strained low-temperature ferromagnetic semiconductor. Here we demonstrate that strong magnetic fields can be induced in ferromagnetic metal films lacking structure inversion symmetry through the Rashba effect. Owing to the combination of spin-orbit and exchange interactions, we show that an electric current flowing in the plane of a Co layer with asymmetric Pt and AlO(x) interfaces produces an effective transverse magnetic field of 1 T per 10(8) A cm(-2). Besides its fundamental significance, the high efficiency of this process makes it a realistic candidate for room-temperature spintronic applications.