The phonon quantum of thermal conductance: Are simulations and measurements estimating the same quantity?

The thermal conductance quantum is a fundamental quantity in quantum transport theory. However, two decades after its first reported measurements and calculations for phonons in suspended nanostructures, reconciling experiments and theory remains elusive. Our massively parallel calculations of phonon transport in micrometer-sized three-dimensional structures suggest that part of the disagreement between theory and experiment stems from the inadequacy of macroscopic concepts to analyze the data. The computed local temperature distribution in the wave ballistic nonequilibrium regime shows that the spatial placement and dimensions of thermometers, heaters, and supporting microbeams in the suspended structures can noticeably affect the thermal conductance's measured values. In addition, diffusive transport assumptions made in the data analysis may result in measured values that considerably differ from the actual thermal conductance of the structure. These results urge for experimental validation of the suitability of diffusive transport assumptions in measuring devices operating at sub-kelvin temperatures.

Maximization of thermal conductance at interfaces via exponentially mass-graded interlayers.

We propose a strategy to potentially best enhance interfacial thermal transport through solid-solid interfaces by adding nano-engineered, exponentially mass-graded intermediate layers. This exponential design rule results in a greater enhancement than a linearly mass-graded interface. By combining calculations using non-equilibrium Green's functions (NEGF) and non-equilibrium molecular dynamics (NEMD), we investigated the role of impedance matching and anharmonicity in the enhancement in addition to geometric parameters such as the number of layers and the junction thickness. Our analysis shows that the effect on thermal conductance is dominated by the phonon thermalization through anharmonic effects, while elastic phonon transmission and impedance matching play a secondary role. In the harmonic limit, increasing the number of layers results in greater elastic phonon transmission at each individual boundary, countered by the decrease of available conducting channels. Consequently, conductance initially increases with number of layers due to improved bridging, but quickly saturates. The presence of slight anharmonic effects (at very low temperature, T = 2 K) turns the saturation into a monotonically increasing trend. Anharmonic effects can further facilitate interfacial thermal transport through the thermalization of phonons at moderate temperatures. At high temperature, however, the role of anharmonicity as a facilitator of interfacial thermal transport reverses. Strong anharmonicity introduces significant intrinsic resistance, overruling the enhancement in thermal conduction at the boundaries. It follows that at a particular temperature, there exists a corresponding junction thickness at which thermal conductance is maximized.

Antisite Pairs Suppress the Thermal Conductivity of BAs.

BAs was predicted to have an unusually high thermal conductivity with a room temperature value of 2000 W m^{-1} K^{-1}, comparable to that of diamond. However, the experimentally measured thermal conductivity of BAs single crystals is still lower than this value. To identify the origin of this large inconsistency, we investigate the lattice structure and potential defects in BAs single crystals at the atomic scale using aberration-corrected scanning transmission electron microscopy (STEM). Rather than finding a large concentration of As vacancies (V_{As}), as widely thought to dominate the thermal resistance in BAs, our STEM results show an enhanced intensity of some B columns and a reduced intensity of some As columns, suggesting the presence of antisite defects with As_{B} (As atom on a B site) and B_{As} (B atom on an As site). Additional calculations show that the antisite pair with As_{B} next to B_{As} is preferred energetically among the different types of point defects investigated and confirm that such defects lower the thermal conductivity for BAs. Using a concentration of 1.8(8)% (6.6±3.0×10^{20} cm^{-3} in density) for the antisite pairs estimated from STEM images, the thermal conductivity is estimated to be 65-100 W m^{-1} K^{-1}, in reasonable agreement with our measured value. Our study suggests that As_{B}-B_{As} antisite pairs are the primary lattice defects suppressing thermal conductivity of BAs. Possible approaches are proposed for the growth of high-quality crystals or films with high thermal conductivity. Employing a combination of state-of-the-art synthesis, STEM characterization, theory, and physical insight, this work models a path toward identifying and understanding defect-limited material functionality.